Arrays of Ge islands on Si(001) grown by means of electron-beam pre-patterning
(2003) In Nanotechnology 14(2). p.264-267- Abstract
- We show that well-defined arrays of self-assembled Ge dots on Si(001) can be grown after pre-patterning the Si surface by means of an electron beam. The electron beam produces C-containing growth masks. The overgrowth of these masks with Si results in pits at the Si surface, in and around which Ge dots nucleate selectively. A manifold of different arrays can be obtained. Almost perfect arrays of quadruples of dots nucleate in the intersections of the four {11n} facets. This way of producing quantum dot arrays is very promising for producing dot structures suitable for use in the study of, for instance, dot-dot tunnelling and related effects.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/315704
- author
- Borgström, Magnus LU ; Zela, Vilma LU and Seifert, Werner LU
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 14
- issue
- 2
- pages
- 264 - 267
- publisher
- IOP Publishing
- external identifiers
-
- wos:000181624100032
- scopus:0037294527
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/14/2/331
- language
- English
- LU publication?
- yes
- id
- 401c00e6-f2e0-4ae3-8c5b-e032b58c52a1 (old id 315704)
- date added to LUP
- 2016-04-01 12:28:30
- date last changed
- 2022-03-29 01:24:27
@article{401c00e6-f2e0-4ae3-8c5b-e032b58c52a1, abstract = {{We show that well-defined arrays of self-assembled Ge dots on Si(001) can be grown after pre-patterning the Si surface by means of an electron beam. The electron beam produces C-containing growth masks. The overgrowth of these masks with Si results in pits at the Si surface, in and around which Ge dots nucleate selectively. A manifold of different arrays can be obtained. Almost perfect arrays of quadruples of dots nucleate in the intersections of the four {11n} facets. This way of producing quantum dot arrays is very promising for producing dot structures suitable for use in the study of, for instance, dot-dot tunnelling and related effects.}}, author = {{Borgström, Magnus and Zela, Vilma and Seifert, Werner}}, issn = {{0957-4484}}, language = {{eng}}, number = {{2}}, pages = {{264--267}}, publisher = {{IOP Publishing}}, series = {{Nanotechnology}}, title = {{Arrays of Ge islands on Si(001) grown by means of electron-beam pre-patterning}}, url = {{http://dx.doi.org/10.1088/0957-4484/14/2/331}}, doi = {{10.1088/0957-4484/14/2/331}}, volume = {{14}}, year = {{2003}}, }