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Adsorption of Cs on InAs(111) surfaces

Szamota-Leandersson, K ; Gothelid, M ; Leandersson, Mats LU and Karlsson, UO (2006) Eight International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures and the Thirteenth International Congress on Thin Films - ACSIN8/ICTF13 252(15). p.5267-5270
Abstract
Caesiated InAs(111)B (1 x 1) and InAs(111)A (2 x 2) surfaces have been studied by photoelectron spectroscopy. On the InAs(111)B a new (root 3 x root 3)R30 degrees reconstruction was observed. During Cs evaporation remarkably small changes are observed in the lone pair states, and no sign of an accumulation layer at the surface can be observed. Instead, the additional charge provided by Cs is rapidly transported towards the bulk. On the InAs(111)A cesium behaves as a typical electropositive alkali metal donator that enhances the already existing accumulation layer. (c) 2005 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
photoemission, indium arsenide, Cs, adatoms, 2DEG
host publication
Proceedings of the Eight International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures and the Thirteenth International Congress on Thin Films - ACSIN8/ICTF13 (Applied Surface Science)
volume
252
issue
15
pages
5267 - 5270
publisher
Elsevier
conference name
Eight International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures and the Thirteenth International Congress on Thin Films - ACSIN8/ICTF13
conference location
Stockholm, Sweden
conference dates
2005-06-20 - 2005-06-23
external identifiers
  • wos:000238623300007
  • scopus:33746963487
ISSN
0169-4332
1873-5584
DOI
10.1016/j.apsusc.2005.12.065
language
English
LU publication?
yes
id
2ae7e9a6-1344-4888-9a39-a2c149d5c325 (old id 405757)
date added to LUP
2016-04-01 12:12:32
date last changed
2021-09-22 02:21:23
@inproceedings{2ae7e9a6-1344-4888-9a39-a2c149d5c325,
  abstract     = {Caesiated InAs(111)B (1 x 1) and InAs(111)A (2 x 2) surfaces have been studied by photoelectron spectroscopy. On the InAs(111)B a new (root 3 x root 3)R30 degrees reconstruction was observed. During Cs evaporation remarkably small changes are observed in the lone pair states, and no sign of an accumulation layer at the surface can be observed. Instead, the additional charge provided by Cs is rapidly transported towards the bulk. On the InAs(111)A cesium behaves as a typical electropositive alkali metal donator that enhances the already existing accumulation layer. (c) 2005 Elsevier B.V. All rights reserved.},
  author       = {Szamota-Leandersson, K and Gothelid, M and Leandersson, Mats and Karlsson, UO},
  booktitle    = {Proceedings of the Eight International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures and the Thirteenth International Congress on Thin Films - ACSIN8/ICTF13 (Applied Surface Science)},
  issn         = {0169-4332},
  language     = {eng},
  number       = {15},
  pages        = {5267--5270},
  publisher    = {Elsevier},
  title        = {Adsorption of Cs on InAs(111) surfaces},
  url          = {http://dx.doi.org/10.1016/j.apsusc.2005.12.065},
  doi          = {10.1016/j.apsusc.2005.12.065},
  volume       = {252},
  year         = {2006},
}