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Growth related aspects of epitaxial nanowires

Johansson, Jonas LU orcid ; Wacaser, Brent LU ; Dick Thelander, Kimberly LU and Seifert, Werner LU (2006) In Nanotechnology 17(11). p.355-361
Abstract
We use metal - organic vapour phase epitaxy for growth investigations of epitaxial nanowires in III - V materials, such as GaAs, GaP, InAs, and InP. In this paper we focus on gold assisted growth of nanowires. The nature of the metal particle - whether it is in the solid or liquid state - is discussed. For InAs and InP we have demonstrated that gold assisted wires can only grow at temperatures where the particle is solid. We continue with a discussion concerning the kinetic aspects of nanowire growth. Under common growth conditions one observes that thinner wires grow faster than thicker wires, contrary to what was described in the early days of whisker growth. We address and resolve this discrepancy by discussing a simple transport model... (More)
We use metal - organic vapour phase epitaxy for growth investigations of epitaxial nanowires in III - V materials, such as GaAs, GaP, InAs, and InP. In this paper we focus on gold assisted growth of nanowires. The nature of the metal particle - whether it is in the solid or liquid state - is discussed. For InAs and InP we have demonstrated that gold assisted wires can only grow at temperatures where the particle is solid. We continue with a discussion concerning the kinetic aspects of nanowire growth. Under common growth conditions one observes that thinner wires grow faster than thicker wires, contrary to what was described in the early days of whisker growth. We address and resolve this discrepancy by discussing a simple transport model and comparing the supersaturations of different systems. Finally, we describe the morphology of epitaxial III - V nanowires with emphasis on the crystal structure. (Less)
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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
17
issue
11
pages
355 - 361
publisher
IOP Publishing
external identifiers
  • wos:000238250300022
  • scopus:33744549332
ISSN
0957-4484
DOI
10.1088/0957-4484/17/11/S21
language
English
LU publication?
yes
id
2755e6d3-f033-46d4-9172-ae0e9a25e683 (old id 405910)
date added to LUP
2016-04-01 12:28:00
date last changed
2021-07-06 03:22:03
@article{2755e6d3-f033-46d4-9172-ae0e9a25e683,
  abstract     = {We use metal - organic vapour phase epitaxy for growth investigations of epitaxial nanowires in III - V materials, such as GaAs, GaP, InAs, and InP. In this paper we focus on gold assisted growth of nanowires. The nature of the metal particle - whether it is in the solid or liquid state - is discussed. For InAs and InP we have demonstrated that gold assisted wires can only grow at temperatures where the particle is solid. We continue with a discussion concerning the kinetic aspects of nanowire growth. Under common growth conditions one observes that thinner wires grow faster than thicker wires, contrary to what was described in the early days of whisker growth. We address and resolve this discrepancy by discussing a simple transport model and comparing the supersaturations of different systems. Finally, we describe the morphology of epitaxial III - V nanowires with emphasis on the crystal structure.},
  author       = {Johansson, Jonas and Wacaser, Brent and Dick Thelander, Kimberly and Seifert, Werner},
  issn         = {0957-4484},
  language     = {eng},
  number       = {11},
  pages        = {355--361},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Growth related aspects of epitaxial nanowires},
  url          = {http://dx.doi.org/10.1088/0957-4484/17/11/S21},
  doi          = {10.1088/0957-4484/17/11/S21},
  volume       = {17},
  year         = {2006},
}