Crystal structure tuning in GaAs nanowires using HCl.
(2014) In Nanoscale 6(14). p.8257-8264- Abstract
- The use of HCl during growth of nanowires presents new possibilities for controlling the growth dynamics and resulting nanowire properties. In this paper, we investigate the effects of in situ HCl on the growth of Au-seeded GaAs nanowires in a growth regime where both wurtzite and zinc blende crystal structures are possible to achieve. We find that HCl changes the crystal structure of the nanowires from pure wurtzite to defect-free zinc blende. By comparing the growth of wurtzite-zinc blende heterostructures with and without the addition of HCl, it is deduced that HCl mainly interacts with Ga species prior incorporation, reducing the amount of Ga available to contribute to the growth. We conclude that the change in crystal structure is... (More)
- The use of HCl during growth of nanowires presents new possibilities for controlling the growth dynamics and resulting nanowire properties. In this paper, we investigate the effects of in situ HCl on the growth of Au-seeded GaAs nanowires in a growth regime where both wurtzite and zinc blende crystal structures are possible to achieve. We find that HCl changes the crystal structure of the nanowires from pure wurtzite to defect-free zinc blende. By comparing the growth of wurtzite-zinc blende heterostructures with and without the addition of HCl, it is deduced that HCl mainly interacts with Ga species prior incorporation, reducing the amount of Ga available to contribute to the growth. We conclude that the change in crystal structure is related to the reduction of Ga adatoms, and demonstrate the realization of wurtzite-zinc blende heterostructures with atomically sharp interfaces achieved only by adding HCl. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4528432
- author
- Jacobsson, Daniel LU ; Lehmann, Sebastian LU and Dick Thelander, Kimberly LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanoscale
- volume
- 6
- issue
- 14
- pages
- 8257 - 8264
- publisher
- Royal Society of Chemistry
- external identifiers
-
- pmid:24931099
- wos:000338638900071
- scopus:84903608447
- pmid:24931099
- ISSN
- 2040-3372
- DOI
- 10.1039/c4nr00991f
- language
- English
- LU publication?
- yes
- id
- 40735625-eeb7-4d63-91a8-5a919fff5b24 (old id 4528432)
- date added to LUP
- 2016-04-01 10:20:49
- date last changed
- 2023-08-31 00:18:22
@article{40735625-eeb7-4d63-91a8-5a919fff5b24,
abstract = {{The use of HCl during growth of nanowires presents new possibilities for controlling the growth dynamics and resulting nanowire properties. In this paper, we investigate the effects of in situ HCl on the growth of Au-seeded GaAs nanowires in a growth regime where both wurtzite and zinc blende crystal structures are possible to achieve. We find that HCl changes the crystal structure of the nanowires from pure wurtzite to defect-free zinc blende. By comparing the growth of wurtzite-zinc blende heterostructures with and without the addition of HCl, it is deduced that HCl mainly interacts with Ga species prior incorporation, reducing the amount of Ga available to contribute to the growth. We conclude that the change in crystal structure is related to the reduction of Ga adatoms, and demonstrate the realization of wurtzite-zinc blende heterostructures with atomically sharp interfaces achieved only by adding HCl.}},
author = {{Jacobsson, Daniel and Lehmann, Sebastian and Dick Thelander, Kimberly}},
issn = {{2040-3372}},
language = {{eng}},
number = {{14}},
pages = {{8257--8264}},
publisher = {{Royal Society of Chemistry}},
series = {{Nanoscale}},
title = {{Crystal structure tuning in GaAs nanowires using HCl.}},
url = {{http://dx.doi.org/10.1039/c4nr00991f}},
doi = {{10.1039/c4nr00991f}},
volume = {{6}},
year = {{2014}},
}