High resolution 100kV electron beam lithography in SU-8
(2006) Micro- and Nano-Engineering MNE 2005 In Microelectronic Engineering 83(4-9). p.1609-1612- Abstract
- High resolution 100 kV electron beam lithography in thin layers of the negative resist SU-8 is demonstrated. Sub-30 nm lines with a pitch down to 300 nm are written in 100 nm thick SU-8. Two reactive ion etch processes are developed in order to transfer the SU-8 structures into a silicon substrate, a Soft O-2-Plasma process to remove SU-8 residues on the silicon surface after development and a highly anisotropic SF6/O-2/CHF3 based process to transfer the pattern into a silicon substrate, with selectivity between silicon and SU-8 of approximately 2. 30 nm lines patterned in SU-8 are successfully transferred into a silicon substrate, which is used as a stamp in a nanoimprint lithography process to fabricate a nanochannel device for DNA... (More)
- High resolution 100 kV electron beam lithography in thin layers of the negative resist SU-8 is demonstrated. Sub-30 nm lines with a pitch down to 300 nm are written in 100 nm thick SU-8. Two reactive ion etch processes are developed in order to transfer the SU-8 structures into a silicon substrate, a Soft O-2-Plasma process to remove SU-8 residues on the silicon surface after development and a highly anisotropic SF6/O-2/CHF3 based process to transfer the pattern into a silicon substrate, with selectivity between silicon and SU-8 of approximately 2. 30 nm lines patterned in SU-8 are successfully transferred into a silicon substrate, which is used as a stamp in a nanoimprint lithography process to fabricate a nanochannel device for DNA stretching experiments. (c) 2006 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/409436
- author
- Bilenberg, B. ; Jacobsen, S. ; Schmidt, M.s. ; Skjolding, L.h.d. LU ; Shi, P. ; Bøggild, P. ; Tegenfeldt, J.O. LU and Kristensen, A.
- organization
- publishing date
- 2006
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- SU-8, 100 kV electron beam lithography, reactive ion etch, DNA stretching, nanochannels
- in
- Microelectronic Engineering
- volume
- 83
- issue
- 4-9
- pages
- 1609 - 1612
- publisher
- Elsevier
- conference name
- Micro- and Nano-Engineering MNE 2005
- conference location
- Vienna, Austria
- conference dates
- 2005-09-19 - 2005-09-22
- external identifiers
-
- wos:000237581900239
- scopus:33646054145
- ISSN
- 0167-9317
- DOI
- 10.1016/j.mee.2006.01.142
- language
- English
- LU publication?
- yes
- id
- 81df96b7-a735-422b-bbd6-6727e74c4017 (old id 409436)
- date added to LUP
- 2016-04-01 11:49:46
- date last changed
- 2022-01-31 19:07:56
@article{81df96b7-a735-422b-bbd6-6727e74c4017, abstract = {{High resolution 100 kV electron beam lithography in thin layers of the negative resist SU-8 is demonstrated. Sub-30 nm lines with a pitch down to 300 nm are written in 100 nm thick SU-8. Two reactive ion etch processes are developed in order to transfer the SU-8 structures into a silicon substrate, a Soft O-2-Plasma process to remove SU-8 residues on the silicon surface after development and a highly anisotropic SF6/O-2/CHF3 based process to transfer the pattern into a silicon substrate, with selectivity between silicon and SU-8 of approximately 2. 30 nm lines patterned in SU-8 are successfully transferred into a silicon substrate, which is used as a stamp in a nanoimprint lithography process to fabricate a nanochannel device for DNA stretching experiments. (c) 2006 Elsevier B.V. All rights reserved.}}, author = {{Bilenberg, B. and Jacobsen, S. and Schmidt, M.s. and Skjolding, L.h.d. and Shi, P. and Bøggild, P. and Tegenfeldt, J.O. and Kristensen, A.}}, issn = {{0167-9317}}, keywords = {{SU-8; 100 kV electron beam lithography; reactive ion etch; DNA stretching; nanochannels}}, language = {{eng}}, number = {{4-9}}, pages = {{1609--1612}}, publisher = {{Elsevier}}, series = {{Microelectronic Engineering}}, title = {{High resolution 100kV electron beam lithography in SU-8}}, url = {{http://dx.doi.org/10.1016/j.mee.2006.01.142}}, doi = {{10.1016/j.mee.2006.01.142}}, volume = {{83}}, year = {{2006}}, }