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High resolution 100kV electron beam lithography in SU-8

Bilenberg, B. ; Jacobsen, S. ; Schmidt, M.s. ; Skjolding, L.h.d. LU ; Shi, P. ; Bøggild, P. ; Tegenfeldt, J.O. LU orcid and Kristensen, A. (2006) Micro- and Nano-Engineering MNE 2005 In Microelectronic Engineering 83(4-9). p.1609-1612
Abstract
High resolution 100 kV electron beam lithography in thin layers of the negative resist SU-8 is demonstrated. Sub-30 nm lines with a pitch down to 300 nm are written in 100 nm thick SU-8. Two reactive ion etch processes are developed in order to transfer the SU-8 structures into a silicon substrate, a Soft O-2-Plasma process to remove SU-8 residues on the silicon surface after development and a highly anisotropic SF6/O-2/CHF3 based process to transfer the pattern into a silicon substrate, with selectivity between silicon and SU-8 of approximately 2. 30 nm lines patterned in SU-8 are successfully transferred into a silicon substrate, which is used as a stamp in a nanoimprint lithography process to fabricate a nanochannel device for DNA... (More)
High resolution 100 kV electron beam lithography in thin layers of the negative resist SU-8 is demonstrated. Sub-30 nm lines with a pitch down to 300 nm are written in 100 nm thick SU-8. Two reactive ion etch processes are developed in order to transfer the SU-8 structures into a silicon substrate, a Soft O-2-Plasma process to remove SU-8 residues on the silicon surface after development and a highly anisotropic SF6/O-2/CHF3 based process to transfer the pattern into a silicon substrate, with selectivity between silicon and SU-8 of approximately 2. 30 nm lines patterned in SU-8 are successfully transferred into a silicon substrate, which is used as a stamp in a nanoimprint lithography process to fabricate a nanochannel device for DNA stretching experiments. (c) 2006 Elsevier B.V. All rights reserved. (Less)
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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
SU-8, 100 kV electron beam lithography, reactive ion etch, DNA stretching, nanochannels
in
Microelectronic Engineering
volume
83
issue
4-9
pages
1609 - 1612
publisher
Elsevier
conference name
Micro- and Nano-Engineering MNE 2005
conference location
Vienna, Austria
conference dates
2005-09-19 - 2005-09-22
external identifiers
  • wos:000237581900239
  • scopus:33646054145
ISSN
0167-9317
DOI
10.1016/j.mee.2006.01.142
language
English
LU publication?
yes
id
81df96b7-a735-422b-bbd6-6727e74c4017 (old id 409436)
date added to LUP
2016-04-01 11:49:46
date last changed
2021-09-15 03:20:56
@article{81df96b7-a735-422b-bbd6-6727e74c4017,
  abstract     = {High resolution 100 kV electron beam lithography in thin layers of the negative resist SU-8 is demonstrated. Sub-30 nm lines with a pitch down to 300 nm are written in 100 nm thick SU-8. Two reactive ion etch processes are developed in order to transfer the SU-8 structures into a silicon substrate, a Soft O-2-Plasma process to remove SU-8 residues on the silicon surface after development and a highly anisotropic SF6/O-2/CHF3 based process to transfer the pattern into a silicon substrate, with selectivity between silicon and SU-8 of approximately 2. 30 nm lines patterned in SU-8 are successfully transferred into a silicon substrate, which is used as a stamp in a nanoimprint lithography process to fabricate a nanochannel device for DNA stretching experiments. (c) 2006 Elsevier B.V. All rights reserved.},
  author       = {Bilenberg, B. and Jacobsen, S. and Schmidt, M.s. and Skjolding, L.h.d. and Shi, P. and Bøggild, P. and Tegenfeldt, J.O. and Kristensen, A.},
  issn         = {0167-9317},
  language     = {eng},
  number       = {4-9},
  pages        = {1609--1612},
  publisher    = {Elsevier},
  series       = {Microelectronic Engineering},
  title        = {High resolution 100kV electron beam lithography in SU-8},
  url          = {http://dx.doi.org/10.1016/j.mee.2006.01.142},
  doi          = {10.1016/j.mee.2006.01.142},
  volume       = {83},
  year         = {2006},
}