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A 1V SiGe Power Amplifier for 81-86 GHz E-band

Tired, Tobias LU ; Sjöland, Henrik LU ; Bryant, Carl LU and Törmänen, Markus LU (2013) NORCHIP Conference, 2013 p.1-4
Abstract
This paper presents an architecture for a SiGe E-band power amplifier using a stacked transformers for output power combination. According to simulations, at E-band frequencies, the power combiner consisting of two individual single turn transformers performs significantly better compared to a single common 2:1 transformer with two turns on the secondary side. The power combination allows for a low supply voltage of 1 V, which is beneficial since the supply can be shared between the power amplifier and the transceiver thereby eliminating the need of a separate voltage regulator. To improve the gain of the two-stage amplifier it employs a capacitive cross-coupling technique not yet seen in mm-wave SiGe PAs. The PA is designed in a SiGe... (More)
This paper presents an architecture for a SiGe E-band power amplifier using a stacked transformers for output power combination. According to simulations, at E-band frequencies, the power combiner consisting of two individual single turn transformers performs significantly better compared to a single common 2:1 transformer with two turns on the secondary side. The power combination allows for a low supply voltage of 1 V, which is beneficial since the supply can be shared between the power amplifier and the transceiver thereby eliminating the need of a separate voltage regulator. To improve the gain of the two-stage amplifier it employs a capacitive cross-coupling technique not yet seen in mm-wave SiGe PAs. The PA is designed in a SiGe process with fr = 200 GHz and achieves a power gain of 12dB, a saturated output power of 16dBm and a 14% peak PAE. (Less)
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
PA
host publication
[Host publication title missing]
pages
4 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
NORCHIP Conference, 2013
conference location
Vilnius, Lithuania
conference dates
2013-11-11 - 2013-11-12
external identifiers
  • scopus:84893609355
DOI
10.1109/NORCHIP.2013.6702018
language
English
LU publication?
yes
id
a45363ce-cff6-4fea-8a72-38f9cdc10ec3 (old id 4113635)
date added to LUP
2016-04-04 12:12:17
date last changed
2020-01-12 21:34:44
@inproceedings{a45363ce-cff6-4fea-8a72-38f9cdc10ec3,
  abstract     = {This paper presents an architecture for a SiGe E-band power amplifier using a stacked transformers for output power combination. According to simulations, at E-band frequencies, the power combiner consisting of two individual single turn transformers performs significantly better compared to a single common 2:1 transformer with two turns on the secondary side. The power combination allows for a low supply voltage of 1 V, which is beneficial since the supply can be shared between the power amplifier and the transceiver thereby eliminating the need of a separate voltage regulator. To improve the gain of the two-stage amplifier it employs a capacitive cross-coupling technique not yet seen in mm-wave SiGe PAs. The PA is designed in a SiGe process with fr = 200 GHz and achieves a power gain of 12dB, a saturated output power of 16dBm and a 14% peak PAE.},
  author       = {Tired, Tobias and Sjöland, Henrik and Bryant, Carl and Törmänen, Markus},
  booktitle    = {[Host publication title missing]},
  language     = {eng},
  pages        = {1--4},
  publisher    = {IEEE - Institute of Electrical and Electronics Engineers Inc.},
  title        = {A 1V SiGe Power Amplifier for 81-86 GHz E-band},
  url          = {http://dx.doi.org/10.1109/NORCHIP.2013.6702018},
  doi          = {10.1109/NORCHIP.2013.6702018},
  year         = {2013},
}