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Spin polarization of an electron-hole gas in InAs/GaSb quantum wells under a dc current

Zakharova, A ; Lapushkin, I ; Nilsson, K ; Yen, ST and Chao, Koung-An LU (2006) In Physical Review B (Condensed Matter and Materials Physics) 73(12).
Abstract
We have investigated the spin polarization of electrons and holes in InAs/GaSb broken-gap quantum wells under nonequilibrium conditions when a dc electric field is applied parallel to interfaces. The existence of a nonzero asymmetric part of the quasiparticle distribution function caused by the dc current and the spin-split of the electron-hole hybridized states generates a finite spin polarization in both the InAs layer and the GaSb layer. With a very weak asymmetry of the distribution function, our self-consistent calculation yields about 1% spin polarization for electrons in the InAs layer and holes in the GaSb layer. The signs of these spin polarizations depend on the widths of the layers, changing the widths drives a phase transition... (More)
We have investigated the spin polarization of electrons and holes in InAs/GaSb broken-gap quantum wells under nonequilibrium conditions when a dc electric field is applied parallel to interfaces. The existence of a nonzero asymmetric part of the quasiparticle distribution function caused by the dc current and the spin-split of the electron-hole hybridized states generates a finite spin polarization in both the InAs layer and the GaSb layer. With a very weak asymmetry of the distribution function, our self-consistent calculation yields about 1% spin polarization for electrons in the InAs layer and holes in the GaSb layer. The signs of these spin polarizations depend on the widths of the layers, changing the widths drives a phase transition in the electron-hole gas between the hybridized semiconducting phase and the normal semiconducting phase. In the hybridized semiconducting phase, the spin polarizations in both the InAs layer and the GaSb layer have the same sign. Crossing the phase boundary, the electron spin polarization and the total spin polarization in the InAs/GaSb quantum well can change their signs. (Less)
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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
73
issue
12
publisher
American Physical Society
external identifiers
  • wos:000236467400084
  • scopus:33645227145
ISSN
1098-0121
DOI
10.1103/PhysRevB.73.125337
language
English
LU publication?
yes
id
ea33eeac-0456-4399-b150-8e2b9e26dc9e (old id 414745)
date added to LUP
2016-04-01 17:00:46
date last changed
2021-02-17 05:15:51
@article{ea33eeac-0456-4399-b150-8e2b9e26dc9e,
  abstract     = {We have investigated the spin polarization of electrons and holes in InAs/GaSb broken-gap quantum wells under nonequilibrium conditions when a dc electric field is applied parallel to interfaces. The existence of a nonzero asymmetric part of the quasiparticle distribution function caused by the dc current and the spin-split of the electron-hole hybridized states generates a finite spin polarization in both the InAs layer and the GaSb layer. With a very weak asymmetry of the distribution function, our self-consistent calculation yields about 1% spin polarization for electrons in the InAs layer and holes in the GaSb layer. The signs of these spin polarizations depend on the widths of the layers, changing the widths drives a phase transition in the electron-hole gas between the hybridized semiconducting phase and the normal semiconducting phase. In the hybridized semiconducting phase, the spin polarizations in both the InAs layer and the GaSb layer have the same sign. Crossing the phase boundary, the electron spin polarization and the total spin polarization in the InAs/GaSb quantum well can change their signs.},
  author       = {Zakharova, A and Lapushkin, I and Nilsson, K and Yen, ST and Chao, Koung-An},
  issn         = {1098-0121},
  language     = {eng},
  number       = {12},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Spin polarization of an electron-hole gas in InAs/GaSb quantum wells under a dc current},
  url          = {http://dx.doi.org/10.1103/PhysRevB.73.125337},
  doi          = {10.1103/PhysRevB.73.125337},
  volume       = {73},
  year         = {2006},
}