Enhanced Anisotropic Effective g Factors of an Al10.25Ga0.75N/GaN Heterostructure Based Quantum Point Contact
(2013) In Nano Letters 13(10). p.4654-4658- Abstract
- Gate-defined quantum point contacts (QPCs) were fabricated with Al0.25Ga0.75N/GaN heterostructures grown by metal organic chemical Vapor deposition (MOCVD). In the transport study of the Zeeman effect, greatly enhanced effective g factors (g*).were obtained. The in-plane g* is found to be 5.5 +/- 0.6, 4.8 0.4, and 4.2 0.4 for the first to the third subband, respectively. Similarly, the out-of-plane g* is 8.3 0.6, 6.7 0.7, and 5.1 0.7. Increasing g* with the population of odd-numbered spin-splitted subbands are obtabed at 14 T. This portion of increase is assumed to arise from the exchange interaction in one-dimensional systems. A careful analysis shows that not only the exchange interaction but the spin orbit interaction (SOI) in the... (More)
- Gate-defined quantum point contacts (QPCs) were fabricated with Al0.25Ga0.75N/GaN heterostructures grown by metal organic chemical Vapor deposition (MOCVD). In the transport study of the Zeeman effect, greatly enhanced effective g factors (g*).were obtained. The in-plane g* is found to be 5.5 +/- 0.6, 4.8 0.4, and 4.2 0.4 for the first to the third subband, respectively. Similarly, the out-of-plane g* is 8.3 0.6, 6.7 0.7, and 5.1 0.7. Increasing g* with the population of odd-numbered spin-splitted subbands are obtabed at 14 T. This portion of increase is assumed to arise from the exchange interaction in one-dimensional systems. A careful analysis shows that not only the exchange interaction but the spin orbit interaction (SOI) in the strongly confined QPC contribunts to the enhancement and anisotropy of g* in different subbands. An approach to distinguish the respective contributions from the SOI and exchange interaction is therefore proposed. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4212303
- author
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Quantum point contacts (QPCs), Al0.25Ga0.75N/GaN heterostructures, effective g factor, spin orbit interaction (SO!), exchange interaction
- in
- Nano Letters
- volume
- 13
- issue
- 10
- pages
- 4654 - 4658
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000326356300011
- scopus:84885466510
- pmid:24041238
- ISSN
- 1530-6992
- DOI
- 10.1021/nl401724m
- language
- English
- LU publication?
- yes
- id
- 94c148e2-ff63-4ed1-a8ca-cada92a87069 (old id 4212303)
- date added to LUP
- 2016-04-01 14:27:44
- date last changed
- 2023-09-03 14:47:49
@article{94c148e2-ff63-4ed1-a8ca-cada92a87069, abstract = {{Gate-defined quantum point contacts (QPCs) were fabricated with Al0.25Ga0.75N/GaN heterostructures grown by metal organic chemical Vapor deposition (MOCVD). In the transport study of the Zeeman effect, greatly enhanced effective g factors (g*).were obtained. The in-plane g* is found to be 5.5 +/- 0.6, 4.8 0.4, and 4.2 0.4 for the first to the third subband, respectively. Similarly, the out-of-plane g* is 8.3 0.6, 6.7 0.7, and 5.1 0.7. Increasing g* with the population of odd-numbered spin-splitted subbands are obtabed at 14 T. This portion of increase is assumed to arise from the exchange interaction in one-dimensional systems. A careful analysis shows that not only the exchange interaction but the spin orbit interaction (SOI) in the strongly confined QPC contribunts to the enhancement and anisotropy of g* in different subbands. An approach to distinguish the respective contributions from the SOI and exchange interaction is therefore proposed.}}, author = {{Lu, Fangchao and Tang, Ning and Huang, Shaoyun and Larsson, Marcus and Maximov, Ivan and Graczyk, Mariusz and Duan, Junxi and Liu, Sidong and Ge, Weikun and Xu, Fujun and Shen, Bo}}, issn = {{1530-6992}}, keywords = {{Quantum point contacts (QPCs); Al0.25Ga0.75N/GaN heterostructures; effective g factor; spin orbit interaction (SO!); exchange interaction}}, language = {{eng}}, number = {{10}}, pages = {{4654--4658}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Enhanced Anisotropic Effective g Factors of an Al10.25Ga0.75N/GaN Heterostructure Based Quantum Point Contact}}, url = {{http://dx.doi.org/10.1021/nl401724m}}, doi = {{10.1021/nl401724m}}, volume = {{13}}, year = {{2013}}, }