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Atomic-Scale Variability and Control of III-V Nanowire Growth Kinetics

Chou, Y. -C.; Hillerich, K.; Tersoff, J.; Reuter, M. C.; Dick Thelander, Kimberly LU and Ross, F. M. (2014) In Science 343(6168). p.281-284
Abstract
In the growth of nanoscale device structures, the ultimate goal is atomic-level precision. By growing III-V nanowires in a transmission electron microscope, we measured the local kinetics in situ as each atomic plane was added at the catalyst-nanowire growth interface by the vapor-liquid-solid process. During growth of gallium phosphide nanowires at typical V/III ratios, we found surprising fluctuations in growth rate, even under steady growth conditions. We correlated these fluctuations with the formation of twin defects in the nanowire, and found that these variations can be suppressed by switching to growth conditions with a low V/III ratio. We derive a growth model showing that this unexpected variation in local growth kinetics... (More)
In the growth of nanoscale device structures, the ultimate goal is atomic-level precision. By growing III-V nanowires in a transmission electron microscope, we measured the local kinetics in situ as each atomic plane was added at the catalyst-nanowire growth interface by the vapor-liquid-solid process. During growth of gallium phosphide nanowires at typical V/III ratios, we found surprising fluctuations in growth rate, even under steady growth conditions. We correlated these fluctuations with the formation of twin defects in the nanowire, and found that these variations can be suppressed by switching to growth conditions with a low V/III ratio. We derive a growth model showing that this unexpected variation in local growth kinetics reflects the very different supply pathways of the V and III species. The model explains under which conditions the growth rate can be controlled precisely at the atomic level. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Science
volume
343
issue
6168
pages
281 - 284
publisher
The American Association for the Advancement of Science
external identifiers
  • wos:000329718600031
  • scopus:84892620286
ISSN
1095-9203
DOI
10.1126/science.1244623
language
English
LU publication?
yes
id
8ba1fe4b-6df8-464f-8cf8-881f7e963bc7 (old id 4319558)
date added to LUP
2014-02-26 13:32:51
date last changed
2017-09-10 04:01:23
@article{8ba1fe4b-6df8-464f-8cf8-881f7e963bc7,
  abstract     = {In the growth of nanoscale device structures, the ultimate goal is atomic-level precision. By growing III-V nanowires in a transmission electron microscope, we measured the local kinetics in situ as each atomic plane was added at the catalyst-nanowire growth interface by the vapor-liquid-solid process. During growth of gallium phosphide nanowires at typical V/III ratios, we found surprising fluctuations in growth rate, even under steady growth conditions. We correlated these fluctuations with the formation of twin defects in the nanowire, and found that these variations can be suppressed by switching to growth conditions with a low V/III ratio. We derive a growth model showing that this unexpected variation in local growth kinetics reflects the very different supply pathways of the V and III species. The model explains under which conditions the growth rate can be controlled precisely at the atomic level.},
  author       = {Chou, Y. -C. and Hillerich, K. and Tersoff, J. and Reuter, M. C. and Dick Thelander, Kimberly and Ross, F. M.},
  issn         = {1095-9203},
  language     = {eng},
  number       = {6168},
  pages        = {281--284},
  publisher    = {The American Association for the Advancement of Science},
  series       = {Science},
  title        = {Atomic-Scale Variability and Control of III-V Nanowire Growth Kinetics},
  url          = {http://dx.doi.org/10.1126/science.1244623},
  volume       = {343},
  year         = {2014},
}