Metal-seeded growth of III-V semiconductor nanowires: towards gold-free synthesis.
(2014) In Nanoscale 6(6). p.3006-3021- Abstract
- Semiconductor nanowires composed of III-V materials have enormous potential to add new functionality to electronics and optical applications. However, integration of these promising structures into applications is severely limited by the current near-universal reliance on gold nanoparticles as seeds for nanowire fabrication. Although highly controlled fabrication is achieved, this metal is entirely incompatible with the Si-based electronics industry. In this Feature we review the progress towards developing gold-free bottom-up synthesis techniques for III-V semiconductor nanowires. Three main categories of nanowire synthesis are discussed: selective-area epitaxy, self-seeding and foreign metal seeding, with main focus on the metal-seeded... (More)
- Semiconductor nanowires composed of III-V materials have enormous potential to add new functionality to electronics and optical applications. However, integration of these promising structures into applications is severely limited by the current near-universal reliance on gold nanoparticles as seeds for nanowire fabrication. Although highly controlled fabrication is achieved, this metal is entirely incompatible with the Si-based electronics industry. In this Feature we review the progress towards developing gold-free bottom-up synthesis techniques for III-V semiconductor nanowires. Three main categories of nanowire synthesis are discussed: selective-area epitaxy, self-seeding and foreign metal seeding, with main focus on the metal-seeded techniques. For comparison, we also review the development of foreign metal seeded synthesis of silicon and germanium nanowires. Finally, directions for future development and anticipated important trends are discussed. We anticipate significant development in the use of foreign metal seeding in particular. In addition, we speculate that multiple different techniques must be developed in order to replace gold and to provide a variety of nanowire structures and properties suited to a diverse range of applications. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4334777
- author
- Dick Thelander, Kimberly LU and Caroff, Philippe LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanoscale
- volume
- 6
- issue
- 6
- pages
- 3006 - 3021
- publisher
- Royal Society of Chemistry
- external identifiers
-
- pmid:24522389
- wos:000332604200001
- scopus:84896806720
- pmid:24522389
- ISSN
- 2040-3372
- DOI
- 10.1039/c3nr06692d
- language
- English
- LU publication?
- yes
- id
- 0f47978d-9515-42df-8417-8690fec646d3 (old id 4334777)
- date added to LUP
- 2016-04-01 10:04:18
- date last changed
- 2023-11-09 11:07:32
@article{0f47978d-9515-42df-8417-8690fec646d3,
abstract = {{Semiconductor nanowires composed of III-V materials have enormous potential to add new functionality to electronics and optical applications. However, integration of these promising structures into applications is severely limited by the current near-universal reliance on gold nanoparticles as seeds for nanowire fabrication. Although highly controlled fabrication is achieved, this metal is entirely incompatible with the Si-based electronics industry. In this Feature we review the progress towards developing gold-free bottom-up synthesis techniques for III-V semiconductor nanowires. Three main categories of nanowire synthesis are discussed: selective-area epitaxy, self-seeding and foreign metal seeding, with main focus on the metal-seeded techniques. For comparison, we also review the development of foreign metal seeded synthesis of silicon and germanium nanowires. Finally, directions for future development and anticipated important trends are discussed. We anticipate significant development in the use of foreign metal seeding in particular. In addition, we speculate that multiple different techniques must be developed in order to replace gold and to provide a variety of nanowire structures and properties suited to a diverse range of applications.}},
author = {{Dick Thelander, Kimberly and Caroff, Philippe}},
issn = {{2040-3372}},
language = {{eng}},
number = {{6}},
pages = {{3006--3021}},
publisher = {{Royal Society of Chemistry}},
series = {{Nanoscale}},
title = {{Metal-seeded growth of III-V semiconductor nanowires: towards gold-free synthesis.}},
url = {{http://dx.doi.org/10.1039/c3nr06692d}},
doi = {{10.1039/c3nr06692d}},
volume = {{6}},
year = {{2014}},
}