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Metal-seeded growth of III-V semiconductor nanowires: towards gold-free synthesis.

Dick Thelander, Kimberly LU and Caroff, Philippe LU (2014) In Nanoscale 6(6). p.3006-3021
Abstract
Semiconductor nanowires composed of III-V materials have enormous potential to add new functionality to electronics and optical applications. However, integration of these promising structures into applications is severely limited by the current near-universal reliance on gold nanoparticles as seeds for nanowire fabrication. Although highly controlled fabrication is achieved, this metal is entirely incompatible with the Si-based electronics industry. In this Feature we review the progress towards developing gold-free bottom-up synthesis techniques for III-V semiconductor nanowires. Three main categories of nanowire synthesis are discussed: selective-area epitaxy, self-seeding and foreign metal seeding, with main focus on the metal-seeded... (More)
Semiconductor nanowires composed of III-V materials have enormous potential to add new functionality to electronics and optical applications. However, integration of these promising structures into applications is severely limited by the current near-universal reliance on gold nanoparticles as seeds for nanowire fabrication. Although highly controlled fabrication is achieved, this metal is entirely incompatible with the Si-based electronics industry. In this Feature we review the progress towards developing gold-free bottom-up synthesis techniques for III-V semiconductor nanowires. Three main categories of nanowire synthesis are discussed: selective-area epitaxy, self-seeding and foreign metal seeding, with main focus on the metal-seeded techniques. For comparison, we also review the development of foreign metal seeded synthesis of silicon and germanium nanowires. Finally, directions for future development and anticipated important trends are discussed. We anticipate significant development in the use of foreign metal seeding in particular. In addition, we speculate that multiple different techniques must be developed in order to replace gold and to provide a variety of nanowire structures and properties suited to a diverse range of applications. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanoscale
volume
6
issue
6
pages
3006 - 3021
publisher
Royal Society of Chemistry
external identifiers
  • pmid:24522389
  • wos:000332604200001
  • scopus:84896806720
ISSN
2040-3372
DOI
10.1039/c3nr06692d
language
English
LU publication?
yes
id
0f47978d-9515-42df-8417-8690fec646d3 (old id 4334777)
date added to LUP
2014-03-06 12:53:19
date last changed
2017-10-01 03:06:19
@article{0f47978d-9515-42df-8417-8690fec646d3,
  abstract     = {Semiconductor nanowires composed of III-V materials have enormous potential to add new functionality to electronics and optical applications. However, integration of these promising structures into applications is severely limited by the current near-universal reliance on gold nanoparticles as seeds for nanowire fabrication. Although highly controlled fabrication is achieved, this metal is entirely incompatible with the Si-based electronics industry. In this Feature we review the progress towards developing gold-free bottom-up synthesis techniques for III-V semiconductor nanowires. Three main categories of nanowire synthesis are discussed: selective-area epitaxy, self-seeding and foreign metal seeding, with main focus on the metal-seeded techniques. For comparison, we also review the development of foreign metal seeded synthesis of silicon and germanium nanowires. Finally, directions for future development and anticipated important trends are discussed. We anticipate significant development in the use of foreign metal seeding in particular. In addition, we speculate that multiple different techniques must be developed in order to replace gold and to provide a variety of nanowire structures and properties suited to a diverse range of applications.},
  author       = {Dick Thelander, Kimberly and Caroff, Philippe},
  issn         = {2040-3372},
  language     = {eng},
  number       = {6},
  pages        = {3006--3021},
  publisher    = {Royal Society of Chemistry},
  series       = {Nanoscale},
  title        = {Metal-seeded growth of III-V semiconductor nanowires: towards gold-free synthesis.},
  url          = {http://dx.doi.org/10.1039/c3nr06692d},
  volume       = {6},
  year         = {2014},
}