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Electrons and holes in amorphous silicon

Weaire, D. and Hobbs, David LU (1993) In Philosophical Magazine Letters p.265-272
Please use this url to cite or link to this publication:
author
publishing date
type
Contribution to journal
publication status
published
subject
in
Philosophical Magazine Letters
pages
265 - 272
publisher
Taylor & Francis
external identifiers
  • scopus:5844415578
ISSN
1362-3036
language
English
LU publication?
no
id
a747bd78-cad9-4266-a179-331a5663fedb (old id 4362128)
date added to LUP
2014-04-23 12:13:59
date last changed
2017-01-01 07:37:25
@article{a747bd78-cad9-4266-a179-331a5663fedb,
  author       = {Weaire, D. and Hobbs, David},
  issn         = {1362-3036},
  language     = {eng},
  pages        = {265--272},
  publisher    = {Taylor & Francis},
  series       = {Philosophical Magazine Letters},
  title        = {Electrons and holes in amorphous silicon},
  year         = {1993},
}