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Room-Temperature Near-Infrared Photodetectors Based on Single Heterojunction Nanowires

Ma, Liang; Hu, Wei; Zhang, Qinglin; Ren, Pinyun; Zhuang, Xiujuan; Zhou, Hong; Xu, Jinyou; Li, Honglai; Shan, Zhengping and Wang, Xiaoxia, et al. (2014) In Nano Letters 14(2). p.694-698
Abstract
Nanoscale near-infrared photodetectors are attractive for their potential applications in integrated optoelectronic devices. Here we report the synthesis of GaSb/GaInSb p-n heterojunction semiconductor nanowires for the first time through a controllable chemical vapor deposition (CVD) route. Based on these nanowires, room-temperature, high-performance, near-infrared photodetectors were constructed. The fabricated devices show excellent light response in the infrared optical communication region (1.55 mu m), with an external quantum efficiency of 10(4), a responsivity of 10(3) A/W, and a short response time of 2 ms, which shows promising potential applications in integrated photonics and optoelectronics devices or systems.
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organization
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type
Contribution to journal
publication status
published
subject
keywords
Photodetector, near-infrared, Gabs/GaInSb, heterojtinction, nanowires, CVD
in
Nano Letters
volume
14
issue
2
pages
694 - 698
publisher
The American Chemical Society
external identifiers
  • wos:000331343900045
  • scopus:84894223264
ISSN
1530-6992
DOI
10.1021/nl403951f
language
English
LU publication?
yes
id
7e07ee4d-ed3e-44dd-b9b6-4f8b76e0e3b3 (old id 4376418)
date added to LUP
2014-04-23 11:39:16
date last changed
2017-11-19 03:51:18
@article{7e07ee4d-ed3e-44dd-b9b6-4f8b76e0e3b3,
  abstract     = {Nanoscale near-infrared photodetectors are attractive for their potential applications in integrated optoelectronic devices. Here we report the synthesis of GaSb/GaInSb p-n heterojunction semiconductor nanowires for the first time through a controllable chemical vapor deposition (CVD) route. Based on these nanowires, room-temperature, high-performance, near-infrared photodetectors were constructed. The fabricated devices show excellent light response in the infrared optical communication region (1.55 mu m), with an external quantum efficiency of 10(4), a responsivity of 10(3) A/W, and a short response time of 2 ms, which shows promising potential applications in integrated photonics and optoelectronics devices or systems.},
  author       = {Ma, Liang and Hu, Wei and Zhang, Qinglin and Ren, Pinyun and Zhuang, Xiujuan and Zhou, Hong and Xu, Jinyou and Li, Honglai and Shan, Zhengping and Wang, Xiaoxia and Liao, Lei and Xu, Hongqi and Pan, Anlian},
  issn         = {1530-6992},
  keyword      = {Photodetector,near-infrared,Gabs/GaInSb,heterojtinction,nanowires,CVD},
  language     = {eng},
  number       = {2},
  pages        = {694--698},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Room-Temperature Near-Infrared Photodetectors Based on Single Heterojunction Nanowires},
  url          = {http://dx.doi.org/10.1021/nl403951f},
  volume       = {14},
  year         = {2014},
}