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Au-Seeded Growth of Vertical and in-Plane III-V Nanowires on Graphite Substrates.

Wallentin, Jesper LU ; Kriegner, Dominik ; Stangl, Julian and Borgström, Magnus LU (2014) In Nano Letters 14(4). p.1707-1713
Abstract
Graphene is promising as a transparent, flexible, and possibly cost-effective substrate for nanowire-based devices. We have investigated Au-seeded III-V nanowire growth with graphite as a model substrate. The highest yield of undoped vertical nanowires was found for InAs, but we also observed vertical nanowires for the InP, GaP, and GaAs materials. The yield of vertical nanowires for GaP and GaAs was strongly improved by supplying the p-dopant DEZn before nanowire growth but not by supplying H2S or HCl. In-plane GaAs and GaP nanowire growth exhibited an unexpected behavior, where the seed particles seemingly reflected on the side facets of other nanowires. These results pave the way for vertical and in-plane hybrid graphene- nanowire... (More)
Graphene is promising as a transparent, flexible, and possibly cost-effective substrate for nanowire-based devices. We have investigated Au-seeded III-V nanowire growth with graphite as a model substrate. The highest yield of undoped vertical nanowires was found for InAs, but we also observed vertical nanowires for the InP, GaP, and GaAs materials. The yield of vertical nanowires for GaP and GaAs was strongly improved by supplying the p-dopant DEZn before nanowire growth but not by supplying H2S or HCl. In-plane GaAs and GaP nanowire growth exhibited an unexpected behavior, where the seed particles seemingly reflected on the side facets of other nanowires. These results pave the way for vertical and in-plane hybrid graphene- nanowire devices. (Less)
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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
14
issue
4
pages
7 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:24592968
  • wos:000334572400003
  • scopus:84897973326
  • pmid:24592968
ISSN
1530-6992
DOI
10.1021/nl403411w
language
English
LU publication?
yes
id
c8a57712-dc9f-4fc5-8b27-c72b39f97122 (old id 4383949)
date added to LUP
2016-04-01 10:47:59
date last changed
2021-06-30 04:01:44
@article{c8a57712-dc9f-4fc5-8b27-c72b39f97122,
  abstract     = {Graphene is promising as a transparent, flexible, and possibly cost-effective substrate for nanowire-based devices. We have investigated Au-seeded III-V nanowire growth with graphite as a model substrate. The highest yield of undoped vertical nanowires was found for InAs, but we also observed vertical nanowires for the InP, GaP, and GaAs materials. The yield of vertical nanowires for GaP and GaAs was strongly improved by supplying the p-dopant DEZn before nanowire growth but not by supplying H2S or HCl. In-plane GaAs and GaP nanowire growth exhibited an unexpected behavior, where the seed particles seemingly reflected on the side facets of other nanowires. These results pave the way for vertical and in-plane hybrid graphene- nanowire devices.},
  author       = {Wallentin, Jesper and Kriegner, Dominik and Stangl, Julian and Borgström, Magnus},
  issn         = {1530-6992},
  language     = {eng},
  number       = {4},
  pages        = {1707--1713},
  publisher    = {The American Chemical Society (ACS)},
  series       = {Nano Letters},
  title        = {Au-Seeded Growth of Vertical and in-Plane III-V Nanowires on Graphite Substrates.},
  url          = {http://dx.doi.org/10.1021/nl403411w},
  doi          = {10.1021/nl403411w},
  volume       = {14},
  year         = {2014},
}