Comparison of Triethylgallium and Trimethylgallium Precursors for GaInP Nanowire Growth
(2021) In Physica Status Solidi (B) Basic Research 258(2).- Abstract
Nanowire (NW) arrays containing a top segment of GaxIn1–xP are investigated, comparing NWs grown using two different Ga precursors, trimethylgallium (TMGa) and triethylgallium (TEGa). TMGa is the precursor commonly used for the particle-assisted vapor–liquid–solid (VLS) growth of GaxIn1–xP NWs. However, it shows inefficient pyrolysis at typical NW growth conditions. The use of the alternative precursor TEGa is investigated by making a direct comparison between NWs grown using TEGa and TMGa at otherwise identical growth conditions. Growth rates, resulting NW materials composition, and time-resolved photoluminescence (TRPL) lifetimes are investigated. With increasing Ga content of the NWs, the... (More)
Nanowire (NW) arrays containing a top segment of GaxIn1–xP are investigated, comparing NWs grown using two different Ga precursors, trimethylgallium (TMGa) and triethylgallium (TEGa). TMGa is the precursor commonly used for the particle-assisted vapor–liquid–solid (VLS) growth of GaxIn1–xP NWs. However, it shows inefficient pyrolysis at typical NW growth conditions. The use of the alternative precursor TEGa is investigated by making a direct comparison between NWs grown using TEGa and TMGa at otherwise identical growth conditions. Growth rates, resulting NW materials composition, and time-resolved photoluminescence (TRPL) lifetimes are investigated. With increasing Ga content of the NWs, the TRPL lifetimes decrease, indicating trap states that are associated with GaP. Somewhat longer TRPL lifetimes for the samples grown using TEGa indicate a lower concentration of deep trap states. For doped NWs, it is found that the strong effect of the p-type dopant diethylzinc (DEZn) on the NW composition, observed for GaxIn1–xP NWs grown using TMGa, is absent when using TEGa.
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- author
- Alcer, David LU ; Saxena, Aditya P. LU ; Hrachowina, Lukas LU ; Zou, Xianshao LU ; Yartsev, Arkady LU and Borgström, Magnus T. LU
- organization
- publishing date
- 2021
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- GaInP, metal-organic vapor phase epitaxy, nanowires, triethylgallium, trimethylgallium
- in
- Physica Status Solidi (B) Basic Research
- volume
- 258
- issue
- 2
- article number
- 2000400
- publisher
- John Wiley & Sons Inc.
- external identifiers
-
- scopus:85092599578
- ISSN
- 0370-1972
- DOI
- 10.1002/pssb.202000400
- language
- English
- LU publication?
- yes
- id
- 44059d46-3316-4412-86f4-1de881baa2fe
- date added to LUP
- 2020-11-11 12:02:07
- date last changed
- 2024-03-05 12:54:51
@article{44059d46-3316-4412-86f4-1de881baa2fe, abstract = {{<p>Nanowire (NW) arrays containing a top segment of Ga<sub>x</sub>In<sub>1–x</sub>P are investigated, comparing NWs grown using two different Ga precursors, trimethylgallium (TMGa) and triethylgallium (TEGa). TMGa is the precursor commonly used for the particle-assisted vapor–liquid–solid (VLS) growth of Ga<sub>x</sub>In<sub>1–x</sub>P NWs. However, it shows inefficient pyrolysis at typical NW growth conditions. The use of the alternative precursor TEGa is investigated by making a direct comparison between NWs grown using TEGa and TMGa at otherwise identical growth conditions. Growth rates, resulting NW materials composition, and time-resolved photoluminescence (TRPL) lifetimes are investigated. With increasing Ga content of the NWs, the TRPL lifetimes decrease, indicating trap states that are associated with GaP. Somewhat longer TRPL lifetimes for the samples grown using TEGa indicate a lower concentration of deep trap states. For doped NWs, it is found that the strong effect of the p-type dopant diethylzinc (DEZn) on the NW composition, observed for Ga<sub>x</sub>In<sub>1–x</sub>P NWs grown using TMGa, is absent when using TEGa.</p>}}, author = {{Alcer, David and Saxena, Aditya P. and Hrachowina, Lukas and Zou, Xianshao and Yartsev, Arkady and Borgström, Magnus T.}}, issn = {{0370-1972}}, keywords = {{GaInP; metal-organic vapor phase epitaxy; nanowires; triethylgallium; trimethylgallium}}, language = {{eng}}, number = {{2}}, publisher = {{John Wiley & Sons Inc.}}, series = {{Physica Status Solidi (B) Basic Research}}, title = {{Comparison of Triethylgallium and Trimethylgallium Precursors for GaInP Nanowire Growth}}, url = {{http://dx.doi.org/10.1002/pssb.202000400}}, doi = {{10.1002/pssb.202000400}}, volume = {{258}}, year = {{2021}}, }