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Comparison of Triethylgallium and Trimethylgallium Precursors for GaInP Nanowire Growth

Alcer, David LU orcid ; Saxena, Aditya P. LU ; Hrachowina, Lukas LU ; Zou, Xianshao LU ; Yartsev, Arkady LU orcid and Borgström, Magnus T. LU (2021) In Physica Status Solidi (B) Basic Research 258(2).
Abstract

Nanowire (NW) arrays containing a top segment of GaxIn1–xP are investigated, comparing NWs grown using two different Ga precursors, trimethylgallium (TMGa) and triethylgallium (TEGa). TMGa is the precursor commonly used for the particle-assisted vapor–liquid–solid (VLS) growth of GaxIn1–xP NWs. However, it shows inefficient pyrolysis at typical NW growth conditions. The use of the alternative precursor TEGa is investigated by making a direct comparison between NWs grown using TEGa and TMGa at otherwise identical growth conditions. Growth rates, resulting NW materials composition, and time-resolved photoluminescence (TRPL) lifetimes are investigated. With increasing Ga content of the NWs, the... (More)

Nanowire (NW) arrays containing a top segment of GaxIn1–xP are investigated, comparing NWs grown using two different Ga precursors, trimethylgallium (TMGa) and triethylgallium (TEGa). TMGa is the precursor commonly used for the particle-assisted vapor–liquid–solid (VLS) growth of GaxIn1–xP NWs. However, it shows inefficient pyrolysis at typical NW growth conditions. The use of the alternative precursor TEGa is investigated by making a direct comparison between NWs grown using TEGa and TMGa at otherwise identical growth conditions. Growth rates, resulting NW materials composition, and time-resolved photoluminescence (TRPL) lifetimes are investigated. With increasing Ga content of the NWs, the TRPL lifetimes decrease, indicating trap states that are associated with GaP. Somewhat longer TRPL lifetimes for the samples grown using TEGa indicate a lower concentration of deep trap states. For doped NWs, it is found that the strong effect of the p-type dopant diethylzinc (DEZn) on the NW composition, observed for GaxIn1–xP NWs grown using TMGa, is absent when using TEGa.

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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
GaInP, metal-organic vapor phase epitaxy, nanowires, triethylgallium, trimethylgallium
in
Physica Status Solidi (B) Basic Research
volume
258
issue
2
article number
2000400
publisher
John Wiley & Sons Inc.
external identifiers
  • scopus:85092599578
ISSN
0370-1972
DOI
10.1002/pssb.202000400
language
English
LU publication?
yes
id
44059d46-3316-4412-86f4-1de881baa2fe
date added to LUP
2020-11-11 12:02:07
date last changed
2024-03-05 12:54:51
@article{44059d46-3316-4412-86f4-1de881baa2fe,
  abstract     = {{<p>Nanowire (NW) arrays containing a top segment of Ga<sub>x</sub>In<sub>1–x</sub>P are investigated, comparing NWs grown using two different Ga precursors, trimethylgallium (TMGa) and triethylgallium (TEGa). TMGa is the precursor commonly used for the particle-assisted vapor–liquid–solid (VLS) growth of Ga<sub>x</sub>In<sub>1–x</sub>P NWs. However, it shows inefficient pyrolysis at typical NW growth conditions. The use of the alternative precursor TEGa is investigated by making a direct comparison between NWs grown using TEGa and TMGa at otherwise identical growth conditions. Growth rates, resulting NW materials composition, and time-resolved photoluminescence (TRPL) lifetimes are investigated. With increasing Ga content of the NWs, the TRPL lifetimes decrease, indicating trap states that are associated with GaP. Somewhat longer TRPL lifetimes for the samples grown using TEGa indicate a lower concentration of deep trap states. For doped NWs, it is found that the strong effect of the p-type dopant diethylzinc (DEZn) on the NW composition, observed for Ga<sub>x</sub>In<sub>1–x</sub>P NWs grown using TMGa, is absent when using TEGa.</p>}},
  author       = {{Alcer, David and Saxena, Aditya P. and Hrachowina, Lukas and Zou, Xianshao and Yartsev, Arkady and Borgström, Magnus T.}},
  issn         = {{0370-1972}},
  keywords     = {{GaInP; metal-organic vapor phase epitaxy; nanowires; triethylgallium; trimethylgallium}},
  language     = {{eng}},
  number       = {{2}},
  publisher    = {{John Wiley & Sons Inc.}},
  series       = {{Physica Status Solidi (B) Basic Research}},
  title        = {{Comparison of Triethylgallium and Trimethylgallium Precursors for GaInP Nanowire Growth}},
  url          = {{http://dx.doi.org/10.1002/pssb.202000400}},
  doi          = {{10.1002/pssb.202000400}},
  volume       = {{258}},
  year         = {{2021}},
}