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Electronic transport mechanism of CdTe nanocrystalline

Mahmmoud Sayed, Abd El-sadek LU ; Yahia, I. S. and Salem, A. M. (2011) In Materials Chemistry and Physics 130(1-2). p.591-597
Abstract
CdTe nanocrystalline powder was synthesized by chemical process. The structure of CdTe nanocrystalline was investigated by means of X-ray diffraction (XRD) technique, energy-dispersive X-ray analysis (EDAX) spectrum and transmission electron microscopy (TEM). The selected area electron diffraction (SAED) study confirms the crystallinity of the CdTe nanocrystalline. Some structural parameters such as the mean crystallite size, the dislocation density and the strain were calculated. The temperature dependence of the dc and ac conductivity was measured in the temperature range 293-423 K. It was found that the dc conductivity is thermally activated type. Values of dc activation energy and the pre-exponential were determined. The ac... (More)
CdTe nanocrystalline powder was synthesized by chemical process. The structure of CdTe nanocrystalline was investigated by means of X-ray diffraction (XRD) technique, energy-dispersive X-ray analysis (EDAX) spectrum and transmission electron microscopy (TEM). The selected area electron diffraction (SAED) study confirms the crystallinity of the CdTe nanocrystalline. Some structural parameters such as the mean crystallite size, the dislocation density and the strain were calculated. The temperature dependence of the dc and ac conductivity was measured in the temperature range 293-423 K. It was found that the dc conductivity is thermally activated type. Values of dc activation energy and the pre-exponential were determined. The ac conductivity was found to increase with increasing both the temperature and frequency and follows the power low. The frequency exponent s was found to decrease with increasing temperature. The correlated barrier hopping (CBH) model was found to be applying to the ac conductivity data. The maximum barrier height W(m) and the density of localized states N(E(F)) were calculated and equal to 0.47 eV and 8.82 x 10(22) to 1.43 x10(23) eV(-1) cm(-3), respectively. CdTe nanomaterial is a good candidate for semiconductor devices due to its high conductivity. (C) 2011 Elsevier B.V. All rights reserved. (Less)
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Contribution to journal
publication status
published
subject
keywords
Chemical Synthesis, TEM, EDAX, Debye-Scherrer powder method and, electrical properties
in
Materials Chemistry and Physics
volume
130
issue
1-2
pages
591 - 597
publisher
Elsevier
external identifiers
  • wos:000295601700094
  • scopus:80052601205
ISSN
0254-0584
DOI
10.1016/j.matchemphys.2011.07.029
language
English
LU publication?
yes
id
d1acc911-93f0-4eaa-852c-a6efa08ce5c0 (old id 4442974)
date added to LUP
2014-05-19 17:22:36
date last changed
2017-01-01 04:09:47
@article{d1acc911-93f0-4eaa-852c-a6efa08ce5c0,
  abstract     = {CdTe nanocrystalline powder was synthesized by chemical process. The structure of CdTe nanocrystalline was investigated by means of X-ray diffraction (XRD) technique, energy-dispersive X-ray analysis (EDAX) spectrum and transmission electron microscopy (TEM). The selected area electron diffraction (SAED) study confirms the crystallinity of the CdTe nanocrystalline. Some structural parameters such as the mean crystallite size, the dislocation density and the strain were calculated. The temperature dependence of the dc and ac conductivity was measured in the temperature range 293-423 K. It was found that the dc conductivity is thermally activated type. Values of dc activation energy and the pre-exponential were determined. The ac conductivity was found to increase with increasing both the temperature and frequency and follows the power low. The frequency exponent s was found to decrease with increasing temperature. The correlated barrier hopping (CBH) model was found to be applying to the ac conductivity data. The maximum barrier height W(m) and the density of localized states N(E(F)) were calculated and equal to 0.47 eV and 8.82 x 10(22) to 1.43 x10(23) eV(-1) cm(-3), respectively. CdTe nanomaterial is a good candidate for semiconductor devices due to its high conductivity. (C) 2011 Elsevier B.V. All rights reserved.},
  author       = {Mahmmoud Sayed, Abd El-sadek and Yahia, I. S. and Salem, A. M.},
  issn         = {0254-0584},
  keyword      = {Chemical Synthesis,TEM,EDAX,Debye-Scherrer powder method and,electrical properties},
  language     = {eng},
  number       = {1-2},
  pages        = {591--597},
  publisher    = {Elsevier},
  series       = {Materials Chemistry and Physics},
  title        = {Electronic transport mechanism of CdTe nanocrystalline},
  url          = {http://dx.doi.org/10.1016/j.matchemphys.2011.07.029},
  volume       = {130},
  year         = {2011},
}