Correlated electron tunneling in the single-molecule nanosystems
(2002) In Physics of Low-Dimensional Structures 1-2. p.113-134- Abstract
- The original approach to the creation of high-temperature single-electron tunneling systems has been developed based on the use of nanocluster molecules. The morphology and electron tunneling characteristics through single nanocluster molecules organized as highly-ordered monolayer Langmuir-Blodgett films on atomically-flat graphite substrate have been studied experimentally using scanning tunneling microscopy (STM) and spectroscopy techniques with sub-nanometer spatial resolution in a double barrier tunnel junction configuration "STM" tip - monomolecular film - conducting substrate" at ambient conditions. Molecular single-electron transistors on the basis of a single nanocluster molecule operating at room temperature were constructed and... (More)
- The original approach to the creation of high-temperature single-electron tunneling systems has been developed based on the use of nanocluster molecules. The morphology and electron tunneling characteristics through single nanocluster molecules organized as highly-ordered monolayer Langmuir-Blodgett films on atomically-flat graphite substrate have been studied experimentally using scanning tunneling microscopy (STM) and spectroscopy techniques with sub-nanometer spatial resolution in a double barrier tunnel junction configuration "STM" tip - monomolecular film - conducting substrate" at ambient conditions. Molecular single-electron transistors on the basis of a single nanocluster molecule operating at room temperature were constructed and studied. Various nanocluster molecules with cores from 3 to 23 metal atoms were used as a central electrode in these transistors. Computer simulation of I-V curves of molecular single-electron tunneling (SET) transistor was carried out using the modified theory of single-electronics with consideration of discreteness of the energy spectrum of a molecule as well as the effects of energy relaxation of electrons in the molecule. A comparison of the simulated I-V curves with the experimental ones allow to conclude that the experimental data correspond to the slow energy relaxation case. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/334711
- author
- Soldatov, ES ; Gubin, SP ; Johansson, Peter LU ; Kolesov, VV ; Sergeev-Cherenkov, AN ; Shorokhov, VV ; Sulaimankulov, KS and Khomutov, GB
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physics of Low-Dimensional Structures
- volume
- 1-2
- pages
- 113 - 134
- publisher
- VSV CO. LTD
- external identifiers
-
- wos:000176337200009
- scopus:18844473755
- ISSN
- 0204-3467
- language
- English
- LU publication?
- yes
- id
- 453ed762-20cc-4f28-a486-8a0b765959ea (old id 334711)
- date added to LUP
- 2016-04-01 16:49:38
- date last changed
- 2022-01-28 22:28:31
@article{453ed762-20cc-4f28-a486-8a0b765959ea,
abstract = {{The original approach to the creation of high-temperature single-electron tunneling systems has been developed based on the use of nanocluster molecules. The morphology and electron tunneling characteristics through single nanocluster molecules organized as highly-ordered monolayer Langmuir-Blodgett films on atomically-flat graphite substrate have been studied experimentally using scanning tunneling microscopy (STM) and spectroscopy techniques with sub-nanometer spatial resolution in a double barrier tunnel junction configuration "STM" tip - monomolecular film - conducting substrate" at ambient conditions. Molecular single-electron transistors on the basis of a single nanocluster molecule operating at room temperature were constructed and studied. Various nanocluster molecules with cores from 3 to 23 metal atoms were used as a central electrode in these transistors. Computer simulation of I-V curves of molecular single-electron tunneling (SET) transistor was carried out using the modified theory of single-electronics with consideration of discreteness of the energy spectrum of a molecule as well as the effects of energy relaxation of electrons in the molecule. A comparison of the simulated I-V curves with the experimental ones allow to conclude that the experimental data correspond to the slow energy relaxation case.}},
author = {{Soldatov, ES and Gubin, SP and Johansson, Peter and Kolesov, VV and Sergeev-Cherenkov, AN and Shorokhov, VV and Sulaimankulov, KS and Khomutov, GB}},
issn = {{0204-3467}},
language = {{eng}},
pages = {{113--134}},
publisher = {{VSV CO. LTD}},
series = {{Physics of Low-Dimensional Structures}},
title = {{Correlated electron tunneling in the single-molecule nanosystems}},
volume = {{1-2}},
year = {{2002}},
}