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Disentangling phonon and impurity interactions in delta-doped Si(001)

Mazzola, Federico; Polley, Craig LU ; Miwa, Jill A.; Simmons, Michelle Y. and Wells, Justin W. (2014) In Applied Physics Letters 104(17).
Abstract
We present a study of the phonon and impurity interactions in a shallow two dimensional electron gas formed in Si(001). A highly conductive ultra-narrow n-type dopant delta-layer, which serves as a platform for quantum computation architecture, is formed and studied by angle resolved photoemission spectroscopy (ARPES) and temperature dependent nanoscale 4-point probe (4PP). The bandstructure of the delta-layer state is both measured and simulated. At 100 K, good agreement is only achieved by including interactions; electron-impurity scattering (W-0 = 56 to 61 meV); and electron-phonon coupling (lambda = 0.14 +/- 0.04). These results are shown to be consistent with temperature dependent 4PP resistance measurements which indicate that at 100... (More)
We present a study of the phonon and impurity interactions in a shallow two dimensional electron gas formed in Si(001). A highly conductive ultra-narrow n-type dopant delta-layer, which serves as a platform for quantum computation architecture, is formed and studied by angle resolved photoemission spectroscopy (ARPES) and temperature dependent nanoscale 4-point probe (4PP). The bandstructure of the delta-layer state is both measured and simulated. At 100 K, good agreement is only achieved by including interactions; electron-impurity scattering (W-0 = 56 to 61 meV); and electron-phonon coupling (lambda = 0.14 +/- 0.04). These results are shown to be consistent with temperature dependent 4PP resistance measurements which indicate that at 100 K, approximate to 7/8 of the measured resistance is due to impurity scattering with the remaining 1/8 coming from phonon interactions. In both resistance and bandstructure measurements, the impurity contribution exhibits a variability of approximate to 9% for nominally identical samples. The combination of ARPES and 4PP affords a thorough insight into the relevant contributions to electrical resistance in reduced dimensionality electronic platforms. (C) 2014 AIP Publishing LLC. (Less)
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organization
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type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
104
issue
17
publisher
American Institute of Physics
external identifiers
  • wos:000336142500068
  • scopus:84899870913
ISSN
0003-6951
DOI
10.1063/1.4874651
language
English
LU publication?
yes
id
7b4ae533-66c2-4265-835d-53df03635cbf (old id 4559225)
date added to LUP
2014-07-17 14:56:50
date last changed
2017-03-19 03:03:51
@article{7b4ae533-66c2-4265-835d-53df03635cbf,
  abstract     = {We present a study of the phonon and impurity interactions in a shallow two dimensional electron gas formed in Si(001). A highly conductive ultra-narrow n-type dopant delta-layer, which serves as a platform for quantum computation architecture, is formed and studied by angle resolved photoemission spectroscopy (ARPES) and temperature dependent nanoscale 4-point probe (4PP). The bandstructure of the delta-layer state is both measured and simulated. At 100 K, good agreement is only achieved by including interactions; electron-impurity scattering (W-0 = 56 to 61 meV); and electron-phonon coupling (lambda = 0.14 +/- 0.04). These results are shown to be consistent with temperature dependent 4PP resistance measurements which indicate that at 100 K, approximate to 7/8 of the measured resistance is due to impurity scattering with the remaining 1/8 coming from phonon interactions. In both resistance and bandstructure measurements, the impurity contribution exhibits a variability of approximate to 9% for nominally identical samples. The combination of ARPES and 4PP affords a thorough insight into the relevant contributions to electrical resistance in reduced dimensionality electronic platforms. (C) 2014 AIP Publishing LLC.},
  articleno    = {173108},
  author       = {Mazzola, Federico and Polley, Craig and Miwa, Jill A. and Simmons, Michelle Y. and Wells, Justin W.},
  issn         = {0003-6951},
  language     = {eng},
  number       = {17},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Disentangling phonon and impurity interactions in delta-doped Si(001)},
  url          = {http://dx.doi.org/10.1063/1.4874651},
  volume       = {104},
  year         = {2014},
}