Disentangling phonon and impurity interactions in delta-doped Si(001)
(2014) In Applied Physics Letters 104(17).- Abstract
- We present a study of the phonon and impurity interactions in a shallow two dimensional electron gas formed in Si(001). A highly conductive ultra-narrow n-type dopant delta-layer, which serves as a platform for quantum computation architecture, is formed and studied by angle resolved photoemission spectroscopy (ARPES) and temperature dependent nanoscale 4-point probe (4PP). The bandstructure of the delta-layer state is both measured and simulated. At 100 K, good agreement is only achieved by including interactions; electron-impurity scattering (W-0 = 56 to 61 meV); and electron-phonon coupling (lambda = 0.14 +/- 0.04). These results are shown to be consistent with temperature dependent 4PP resistance measurements which indicate that at 100... (More)
- We present a study of the phonon and impurity interactions in a shallow two dimensional electron gas formed in Si(001). A highly conductive ultra-narrow n-type dopant delta-layer, which serves as a platform for quantum computation architecture, is formed and studied by angle resolved photoemission spectroscopy (ARPES) and temperature dependent nanoscale 4-point probe (4PP). The bandstructure of the delta-layer state is both measured and simulated. At 100 K, good agreement is only achieved by including interactions; electron-impurity scattering (W-0 = 56 to 61 meV); and electron-phonon coupling (lambda = 0.14 +/- 0.04). These results are shown to be consistent with temperature dependent 4PP resistance measurements which indicate that at 100 K, approximate to 7/8 of the measured resistance is due to impurity scattering with the remaining 1/8 coming from phonon interactions. In both resistance and bandstructure measurements, the impurity contribution exhibits a variability of approximate to 9% for nominally identical samples. The combination of ARPES and 4PP affords a thorough insight into the relevant contributions to electrical resistance in reduced dimensionality electronic platforms. (C) 2014 AIP Publishing LLC. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4559225
- author
- Mazzola, Federico ; Polley, Craig LU ; Miwa, Jill A. ; Simmons, Michelle Y. and Wells, Justin W.
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 104
- issue
- 17
- article number
- 173108
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000336142500068
- scopus:84899870913
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4874651
- language
- English
- LU publication?
- yes
- id
- 7b4ae533-66c2-4265-835d-53df03635cbf (old id 4559225)
- date added to LUP
- 2016-04-01 10:02:24
- date last changed
- 2022-01-25 19:06:21
@article{7b4ae533-66c2-4265-835d-53df03635cbf,
abstract = {{We present a study of the phonon and impurity interactions in a shallow two dimensional electron gas formed in Si(001). A highly conductive ultra-narrow n-type dopant delta-layer, which serves as a platform for quantum computation architecture, is formed and studied by angle resolved photoemission spectroscopy (ARPES) and temperature dependent nanoscale 4-point probe (4PP). The bandstructure of the delta-layer state is both measured and simulated. At 100 K, good agreement is only achieved by including interactions; electron-impurity scattering (W-0 = 56 to 61 meV); and electron-phonon coupling (lambda = 0.14 +/- 0.04). These results are shown to be consistent with temperature dependent 4PP resistance measurements which indicate that at 100 K, approximate to 7/8 of the measured resistance is due to impurity scattering with the remaining 1/8 coming from phonon interactions. In both resistance and bandstructure measurements, the impurity contribution exhibits a variability of approximate to 9% for nominally identical samples. The combination of ARPES and 4PP affords a thorough insight into the relevant contributions to electrical resistance in reduced dimensionality electronic platforms. (C) 2014 AIP Publishing LLC.}},
author = {{Mazzola, Federico and Polley, Craig and Miwa, Jill A. and Simmons, Michelle Y. and Wells, Justin W.}},
issn = {{0003-6951}},
language = {{eng}},
number = {{17}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Disentangling phonon and impurity interactions in delta-doped Si(001)}},
url = {{http://dx.doi.org/10.1063/1.4874651}},
doi = {{10.1063/1.4874651}},
volume = {{104}},
year = {{2014}},
}