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Disentangling phonon and impurity interactions in delta-doped Si(001)

Mazzola, Federico ; Polley, Craig LU ; Miwa, Jill A. ; Simmons, Michelle Y. and Wells, Justin W. (2014) In Applied Physics Letters 104(17).
Abstract
We present a study of the phonon and impurity interactions in a shallow two dimensional electron gas formed in Si(001). A highly conductive ultra-narrow n-type dopant delta-layer, which serves as a platform for quantum computation architecture, is formed and studied by angle resolved photoemission spectroscopy (ARPES) and temperature dependent nanoscale 4-point probe (4PP). The bandstructure of the delta-layer state is both measured and simulated. At 100 K, good agreement is only achieved by including interactions; electron-impurity scattering (W-0 = 56 to 61 meV); and electron-phonon coupling (lambda = 0.14 +/- 0.04). These results are shown to be consistent with temperature dependent 4PP resistance measurements which indicate that at 100... (More)
We present a study of the phonon and impurity interactions in a shallow two dimensional electron gas formed in Si(001). A highly conductive ultra-narrow n-type dopant delta-layer, which serves as a platform for quantum computation architecture, is formed and studied by angle resolved photoemission spectroscopy (ARPES) and temperature dependent nanoscale 4-point probe (4PP). The bandstructure of the delta-layer state is both measured and simulated. At 100 K, good agreement is only achieved by including interactions; electron-impurity scattering (W-0 = 56 to 61 meV); and electron-phonon coupling (lambda = 0.14 +/- 0.04). These results are shown to be consistent with temperature dependent 4PP resistance measurements which indicate that at 100 K, approximate to 7/8 of the measured resistance is due to impurity scattering with the remaining 1/8 coming from phonon interactions. In both resistance and bandstructure measurements, the impurity contribution exhibits a variability of approximate to 9% for nominally identical samples. The combination of ARPES and 4PP affords a thorough insight into the relevant contributions to electrical resistance in reduced dimensionality electronic platforms. (C) 2014 AIP Publishing LLC. (Less)
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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
104
issue
17
article number
173108
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000336142500068
  • scopus:84899870913
ISSN
0003-6951
DOI
10.1063/1.4874651
language
English
LU publication?
yes
id
7b4ae533-66c2-4265-835d-53df03635cbf (old id 4559225)
date added to LUP
2016-04-01 10:02:24
date last changed
2022-01-25 19:06:21
@article{7b4ae533-66c2-4265-835d-53df03635cbf,
  abstract     = {{We present a study of the phonon and impurity interactions in a shallow two dimensional electron gas formed in Si(001). A highly conductive ultra-narrow n-type dopant delta-layer, which serves as a platform for quantum computation architecture, is formed and studied by angle resolved photoemission spectroscopy (ARPES) and temperature dependent nanoscale 4-point probe (4PP). The bandstructure of the delta-layer state is both measured and simulated. At 100 K, good agreement is only achieved by including interactions; electron-impurity scattering (W-0 = 56 to 61 meV); and electron-phonon coupling (lambda = 0.14 +/- 0.04). These results are shown to be consistent with temperature dependent 4PP resistance measurements which indicate that at 100 K, approximate to 7/8 of the measured resistance is due to impurity scattering with the remaining 1/8 coming from phonon interactions. In both resistance and bandstructure measurements, the impurity contribution exhibits a variability of approximate to 9% for nominally identical samples. The combination of ARPES and 4PP affords a thorough insight into the relevant contributions to electrical resistance in reduced dimensionality electronic platforms. (C) 2014 AIP Publishing LLC.}},
  author       = {{Mazzola, Federico and Polley, Craig and Miwa, Jill A. and Simmons, Michelle Y. and Wells, Justin W.}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{17}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Disentangling phonon and impurity interactions in delta-doped Si(001)}},
  url          = {{http://dx.doi.org/10.1063/1.4874651}},
  doi          = {{10.1063/1.4874651}},
  volume       = {{104}},
  year         = {{2014}},
}