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Bipolar gating of epitaxial graphene by intercalation of Ge

Baringhaus, J.; Stoehr, A.; Forti, S.; Krasnikov, S. A.; Zakharov, Alexei LU ; Starke, U. and Tegenkamp, C. (2014) In Applied Physics Letters 104(26).
Abstract
In this study, the ambivalent behavior of Ge intercalation is studied by means of scanning tunneling microscopy and spectroscopy as well as local 4-point probe transport measurements. In quantitative agreement with angle-resolved photoemission experiments, both p-and n-type doped graphene areas and their doping level were identified by local spectroscopy. The p-doped areas appear higher by 2 angstrom with respect to the n-doped areas suggesting incorporation of thicker Ge-layers accompanied by a modified coupling to the initial SiC-surface. Furthermore, the sheet resistance was measured on each of the patches separately. The intrinsic imbalance between the carrier types in the different areas is well reflected by the transport study. The... (More)
In this study, the ambivalent behavior of Ge intercalation is studied by means of scanning tunneling microscopy and spectroscopy as well as local 4-point probe transport measurements. In quantitative agreement with angle-resolved photoemission experiments, both p-and n-type doped graphene areas and their doping level were identified by local spectroscopy. The p-doped areas appear higher by 2 angstrom with respect to the n-doped areas suggesting incorporation of thicker Ge-layers accompanied by a modified coupling to the initial SiC-surface. Furthermore, the sheet resistance was measured on each of the patches separately. The intrinsic imbalance between the carrier types in the different areas is well reflected by the transport study. The process of intercalation does not affect the transport properties in comparison to pristine graphene pointing to a sufficient homogeneity of the decoupled graphene layer. Transport measurements across chemically gated pn-junctions reveal increased resistances, possibly due to enlarged tunneling barriers. (C) 2014 AIP Publishing LLC. (Less)
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organization
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type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
104
issue
26
publisher
American Institute of Physics
external identifiers
  • wos:000339114100014
  • scopus:84905671278
ISSN
0003-6951
DOI
10.1063/1.4886411
language
English
LU publication?
yes
id
49fee9ef-1bb9-4d88-90c0-129f5c464163 (old id 4595836)
date added to LUP
2014-09-05 12:38:19
date last changed
2017-10-29 03:08:51
@article{49fee9ef-1bb9-4d88-90c0-129f5c464163,
  abstract     = {In this study, the ambivalent behavior of Ge intercalation is studied by means of scanning tunneling microscopy and spectroscopy as well as local 4-point probe transport measurements. In quantitative agreement with angle-resolved photoemission experiments, both p-and n-type doped graphene areas and their doping level were identified by local spectroscopy. The p-doped areas appear higher by 2 angstrom with respect to the n-doped areas suggesting incorporation of thicker Ge-layers accompanied by a modified coupling to the initial SiC-surface. Furthermore, the sheet resistance was measured on each of the patches separately. The intrinsic imbalance between the carrier types in the different areas is well reflected by the transport study. The process of intercalation does not affect the transport properties in comparison to pristine graphene pointing to a sufficient homogeneity of the decoupled graphene layer. Transport measurements across chemically gated pn-junctions reveal increased resistances, possibly due to enlarged tunneling barriers. (C) 2014 AIP Publishing LLC.},
  articleno    = {261602},
  author       = {Baringhaus, J. and Stoehr, A. and Forti, S. and Krasnikov, S. A. and Zakharov, Alexei and Starke, U. and Tegenkamp, C.},
  issn         = {0003-6951},
  language     = {eng},
  number       = {26},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Bipolar gating of epitaxial graphene by intercalation of Ge},
  url          = {http://dx.doi.org/10.1063/1.4886411},
  volume       = {104},
  year         = {2014},
}