Advanced

High rate reactive dc magnetron sputter deposition of Al2O3 films

Olsson, Maryam LU ; Macak, Karol; Helmersson, Ulf and Hjörvarsson, Björn (1998) In Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films 16(2). p.639-639
Abstract
Aluminum oxide films were produced by reactive dc magnetron sputtering of Al in Ar+O2. The composition of the films was characterized by Rutherford backscattering measurements. Stoichiometric films possessed excellent optical properties with a refractive index of ∼1.6 for visible and near-infrared light. It was possible to produce stoichiometric films while keeping the target in the metallic mode of operation; the resulting deposition rate was 23 nm min−1, as compared to 0.95 nm min−1 for filmsgrown from an oxidized target. An O/Al arrival rate ratio exceeding ∼17 was required for stoichiometric films to be grown at room temperature. The success of the present high-rate deposition strategy hinges on the use of a suitable deposition system... (More)
Aluminum oxide films were produced by reactive dc magnetron sputtering of Al in Ar+O2. The composition of the films was characterized by Rutherford backscattering measurements. Stoichiometric films possessed excellent optical properties with a refractive index of ∼1.6 for visible and near-infrared light. It was possible to produce stoichiometric films while keeping the target in the metallic mode of operation; the resulting deposition rate was 23 nm min−1, as compared to 0.95 nm min−1 for filmsgrown from an oxidized target. An O/Al arrival rate ratio exceeding ∼17 was required for stoichiometric films to be grown at room temperature. The success of the present high-rate deposition strategy hinges on the use of a suitable deposition system geometry — including a large target-to-substrate distance and a small target size — and on the use of sufficient Ar pressure. Monte Carlo simulations are presented; they can be reconciled with our empirical data. (Less)
Please use this url to cite or link to this publication:
author
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films
volume
16
issue
2
pages
639 - 639
publisher
American Vacuum Society
external identifiers
  • scopus:0032379780
ISSN
1520-8559
DOI
10.1116/1.581081
language
English
LU publication?
no
id
98c7d76d-6229-453c-8d78-379745ae5024 (old id 4643613)
date added to LUP
2014-09-10 07:42:29
date last changed
2017-02-26 03:38:27
@article{98c7d76d-6229-453c-8d78-379745ae5024,
  abstract     = {Aluminum oxide films were produced by reactive dc magnetron sputtering of Al in Ar+O2. The composition of the films was characterized by Rutherford backscattering measurements. Stoichiometric films possessed excellent optical properties with a refractive index of ∼1.6 for visible and near-infrared light. It was possible to produce stoichiometric films while keeping the target in the metallic mode of operation; the resulting deposition rate was 23 nm min−1, as compared to 0.95 nm min−1 for filmsgrown from an oxidized target. An O/Al arrival rate ratio exceeding ∼17 was required for stoichiometric films to be grown at room temperature. The success of the present high-rate deposition strategy hinges on the use of a suitable deposition system geometry — including a large target-to-substrate distance and a small target size — and on the use of sufficient Ar pressure. Monte Carlo simulations are presented; they can be reconciled with our empirical data.},
  author       = {Olsson, Maryam and Macak, Karol and Helmersson, Ulf and Hjörvarsson, Björn},
  issn         = {1520-8559},
  language     = {eng},
  number       = {2},
  pages        = {639--639},
  publisher    = {American Vacuum Society},
  series       = {Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films},
  title        = {High rate reactive dc magnetron sputter deposition of Al2O3 films},
  url          = {http://dx.doi.org/10.1116/1.581081},
  volume       = {16},
  year         = {1998},
}