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Mechanisms for reactive dc magnetron sputtering with different atomic masses - large area coatings of Al oxide and W oxide

Olsson, Maryam LU and Macak, Karol (2000) In Thin Solid Films 371(1-2). p.86-94
Abstract
Stoichiometric Al and W oxide films are prepared with high stability from the metallic state of the cathodes using conventional reactive DC magnetron sputtering on an industrial prototype scale. While for the Al, increased target power is a trivial way to increase growth rates, W oxide sputtering of optically functional films with sufficiently amorphous structure is severely limited by the effect of gas rarefaction at high powers. Choosing an appropriate working gas pressure and a source-to-substrate distance, which facilitates the gas scattering allows the deposition of homogeneous stoichiometric tungsten oxide films in a stable condition with a relatively high discharge current. Optimization of the process parameters with respect to film... (More)
Stoichiometric Al and W oxide films are prepared with high stability from the metallic state of the cathodes using conventional reactive DC magnetron sputtering on an industrial prototype scale. While for the Al, increased target power is a trivial way to increase growth rates, W oxide sputtering of optically functional films with sufficiently amorphous structure is severely limited by the effect of gas rarefaction at high powers. Choosing an appropriate working gas pressure and a source-to-substrate distance, which facilitates the gas scattering allows the deposition of homogeneous stoichiometric tungsten oxide films in a stable condition with a relatively high discharge current. Optimization of the process parameters with respect to film properties and efficiency of the deposition process is discussed. (Less)
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author
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Tungsten oxide, Magnetron sputtering, Gas rarefaction, Deposition process
in
Thin Solid Films
volume
371
issue
1-2
pages
86 - 94
publisher
Elsevier
external identifiers
  • scopus:0033721735
ISSN
0040-6090
DOI
10.1016/S0040-6090(00)00958-5
language
English
LU publication?
no
id
8dd93ba2-716f-40fd-bfd7-48f72a15abec (old id 4645092)
date added to LUP
2014-09-10 08:04:57
date last changed
2017-01-01 07:23:04
@article{8dd93ba2-716f-40fd-bfd7-48f72a15abec,
  abstract     = {Stoichiometric Al and W oxide films are prepared with high stability from the metallic state of the cathodes using conventional reactive DC magnetron sputtering on an industrial prototype scale. While for the Al, increased target power is a trivial way to increase growth rates, W oxide sputtering of optically functional films with sufficiently amorphous structure is severely limited by the effect of gas rarefaction at high powers. Choosing an appropriate working gas pressure and a source-to-substrate distance, which facilitates the gas scattering allows the deposition of homogeneous stoichiometric tungsten oxide films in a stable condition with a relatively high discharge current. Optimization of the process parameters with respect to film properties and efficiency of the deposition process is discussed.},
  author       = {Olsson, Maryam and Macak, Karol},
  issn         = {0040-6090},
  keyword      = {Tungsten oxide,Magnetron sputtering,Gas rarefaction,Deposition process},
  language     = {eng},
  number       = {1-2},
  pages        = {86--94},
  publisher    = {Elsevier},
  series       = {Thin Solid Films},
  title        = {Mechanisms for reactive dc magnetron sputtering with different atomic masses - large area coatings of Al oxide and W oxide},
  url          = {http://dx.doi.org/10.1016/S0040-6090(00)00958-5},
  volume       = {371},
  year         = {2000},
}