Mechanisms for reactive dc magnetron sputtering with different atomic masses - large area coatings of Al oxide and W oxide
(2000) In Thin Solid Films 371(1-2). p.86-94- Abstract
- Stoichiometric Al and W oxide films are prepared with high stability from the metallic state of the cathodes using conventional reactive DC magnetron sputtering on an industrial prototype scale. While for the Al, increased target power is a trivial way to increase growth rates, W oxide sputtering of optically functional films with sufficiently amorphous structure is severely limited by the effect of gas rarefaction at high powers. Choosing an appropriate working gas pressure and a source-to-substrate distance, which facilitates the gas scattering allows the deposition of homogeneous stoichiometric tungsten oxide films in a stable condition with a relatively high discharge current. Optimization of the process parameters with respect to film... (More)
- Stoichiometric Al and W oxide films are prepared with high stability from the metallic state of the cathodes using conventional reactive DC magnetron sputtering on an industrial prototype scale. While for the Al, increased target power is a trivial way to increase growth rates, W oxide sputtering of optically functional films with sufficiently amorphous structure is severely limited by the effect of gas rarefaction at high powers. Choosing an appropriate working gas pressure and a source-to-substrate distance, which facilitates the gas scattering allows the deposition of homogeneous stoichiometric tungsten oxide films in a stable condition with a relatively high discharge current. Optimization of the process parameters with respect to film properties and efficiency of the deposition process is discussed. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4645092
- author
- Olsson, Maryam LU and Macak, Karol
- publishing date
- 2000
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Tungsten oxide, Magnetron sputtering, Gas rarefaction, Deposition process
- in
- Thin Solid Films
- volume
- 371
- issue
- 1-2
- pages
- 86 - 94
- publisher
- Elsevier
- external identifiers
-
- scopus:0033721735
- ISSN
- 0040-6090
- DOI
- 10.1016/S0040-6090(00)00958-5
- language
- English
- LU publication?
- no
- id
- 8dd93ba2-716f-40fd-bfd7-48f72a15abec (old id 4645092)
- date added to LUP
- 2016-04-01 17:03:33
- date last changed
- 2022-01-29 00:01:06
@article{8dd93ba2-716f-40fd-bfd7-48f72a15abec,
abstract = {{Stoichiometric Al and W oxide films are prepared with high stability from the metallic state of the cathodes using conventional reactive DC magnetron sputtering on an industrial prototype scale. While for the Al, increased target power is a trivial way to increase growth rates, W oxide sputtering of optically functional films with sufficiently amorphous structure is severely limited by the effect of gas rarefaction at high powers. Choosing an appropriate working gas pressure and a source-to-substrate distance, which facilitates the gas scattering allows the deposition of homogeneous stoichiometric tungsten oxide films in a stable condition with a relatively high discharge current. Optimization of the process parameters with respect to film properties and efficiency of the deposition process is discussed.}},
author = {{Olsson, Maryam and Macak, Karol}},
issn = {{0040-6090}},
keywords = {{Tungsten oxide; Magnetron sputtering; Gas rarefaction; Deposition process}},
language = {{eng}},
number = {{1-2}},
pages = {{86--94}},
publisher = {{Elsevier}},
series = {{Thin Solid Films}},
title = {{Mechanisms for reactive dc magnetron sputtering with different atomic masses - large area coatings of Al oxide and W oxide}},
url = {{http://dx.doi.org/10.1016/S0040-6090(00)00958-5}},
doi = {{10.1016/S0040-6090(00)00958-5}},
volume = {{371}},
year = {{2000}},
}