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On the synthesis of ultra-flat ITO thin films by conventional dc magnetron sputtering at RT

Betz, Ulrich; Olsson, Maryam LU ; Marthy, Jan and Escola, Miguel (2008) In Thin Solid Films 516(7). p.1334-1340
Abstract
Highly transparent, conductive Sn-doped In2O3 (ITO) thin films with a characteristic root mean square surface roughness RMS below 1 nm were obtained from deposition of amorphous ITO and subsequent annealing treatment. ITO thin films with ultra flat surface were produced by (i) controlling crystallization mechanisms (nucleation and growth) of amorphous ITO through optimization of hydrogen content and temperature profile during sputtering and annealing process and (ii) preventing formation of agglomerated atoms/clusters in the gas phase and hence reducing large surface particles through fine tuning the sputtering rate and process pressure. Characterization of the coatings revealed specific resistivities below 2.5 × 10− 4 Ω cm and... (More)
Highly transparent, conductive Sn-doped In2O3 (ITO) thin films with a characteristic root mean square surface roughness RMS below 1 nm were obtained from deposition of amorphous ITO and subsequent annealing treatment. ITO thin films with ultra flat surface were produced by (i) controlling crystallization mechanisms (nucleation and growth) of amorphous ITO through optimization of hydrogen content and temperature profile during sputtering and annealing process and (ii) preventing formation of agglomerated atoms/clusters in the gas phase and hence reducing large surface particles through fine tuning the sputtering rate and process pressure. Characterization of the coatings revealed specific resistivities below 2.5 × 10− 4 Ω cm and transparencies above 90% in the visible range of light. (Less)
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author
publishing date
type
Contribution to journal
publication status
published
subject
in
Thin Solid Films
volume
516
issue
7
pages
1334 - 1340
publisher
Elsevier
external identifiers
  • scopus:38649139922
ISSN
0040-6090
DOI
10.1016/j.tsf.2007.03.094
language
English
LU publication?
no
id
cca46a37-fb57-4f04-902e-0429261444a2 (old id 4645447)
date added to LUP
2014-09-10 13:37:57
date last changed
2017-09-24 03:54:33
@article{cca46a37-fb57-4f04-902e-0429261444a2,
  abstract     = {Highly transparent, conductive Sn-doped In2O3 (ITO) thin films with a characteristic root mean square surface roughness RMS below 1 nm were obtained from deposition of amorphous ITO and subsequent annealing treatment. ITO thin films with ultra flat surface were produced by (i) controlling crystallization mechanisms (nucleation and growth) of amorphous ITO through optimization of hydrogen content and temperature profile during sputtering and annealing process and (ii) preventing formation of agglomerated atoms/clusters in the gas phase and hence reducing large surface particles through fine tuning the sputtering rate and process pressure. Characterization of the coatings revealed specific resistivities below 2.5 × 10− 4 Ω cm and transparencies above 90% in the visible range of light.},
  author       = {Betz, Ulrich and Olsson, Maryam and Marthy, Jan and Escola, Miguel},
  issn         = {0040-6090},
  language     = {eng},
  number       = {7},
  pages        = {1334--1340},
  publisher    = {Elsevier},
  series       = {Thin Solid Films},
  title        = {On the synthesis of ultra-flat ITO thin films by conventional dc magnetron sputtering at RT},
  url          = {http://dx.doi.org/10.1016/j.tsf.2007.03.094},
  volume       = {516},
  year         = {2008},
}