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Fully tunable, non-invasive thermal biasing of gated nanostructures suitable for low-temperature studies.

Gluschke, Jan-Göran LU ; Fahlvik Svensson, Sofia LU ; Thelander, Claes LU and Linke, Heiner LU orcid (2014) In Nanotechnology 25(38).
Abstract
There is much recent interest in the thermoelectric (TE) characterization of single nanostructures at low temperatures, because such measurements yield information that is complementary to traditional conductance measurements, and because they may lead to novel paradigms for TE energy conversion. However, previously reported techniques for thermal biasing of nanostructures are difficult to use at low temperatures because of unintended global device heating, the lack of ability to continuously tune the thermal bias, or limited compatibility with gating techniques. By placing a heater directly on top of the electrical contact to a single InAs nanowire, we demonstrate fully tunable thermal biases of up to several tens of Kelvin, combined with... (More)
There is much recent interest in the thermoelectric (TE) characterization of single nanostructures at low temperatures, because such measurements yield information that is complementary to traditional conductance measurements, and because they may lead to novel paradigms for TE energy conversion. However, previously reported techniques for thermal biasing of nanostructures are difficult to use at low temperatures because of unintended global device heating, the lack of ability to continuously tune the thermal bias, or limited compatibility with gating techniques. By placing a heater directly on top of the electrical contact to a single InAs nanowire, we demonstrate fully tunable thermal biases of up to several tens of Kelvin, combined with negligible overall heating of the device, and with full functionality of a back gate, in the temperature range between 4 K and 300 K. (Less)
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
25
issue
38
article number
385704
publisher
IOP Publishing
external identifiers
  • pmid:25181529
  • wos:000342503400008
  • scopus:84938142650
  • pmid:25181529
ISSN
0957-4484
DOI
10.1088/0957-4484/25/38/385704
language
English
LU publication?
yes
id
a536f8ef-a813-4635-be2b-539d3da78436 (old id 4692488)
date added to LUP
2016-04-01 10:11:12
date last changed
2021-08-18 01:54:46
@article{a536f8ef-a813-4635-be2b-539d3da78436,
  abstract     = {There is much recent interest in the thermoelectric (TE) characterization of single nanostructures at low temperatures, because such measurements yield information that is complementary to traditional conductance measurements, and because they may lead to novel paradigms for TE energy conversion. However, previously reported techniques for thermal biasing of nanostructures are difficult to use at low temperatures because of unintended global device heating, the lack of ability to continuously tune the thermal bias, or limited compatibility with gating techniques. By placing a heater directly on top of the electrical contact to a single InAs nanowire, we demonstrate fully tunable thermal biases of up to several tens of Kelvin, combined with negligible overall heating of the device, and with full functionality of a back gate, in the temperature range between 4 K and 300 K.},
  author       = {Gluschke, Jan-Göran and Fahlvik Svensson, Sofia and Thelander, Claes and Linke, Heiner},
  issn         = {0957-4484},
  language     = {eng},
  number       = {38},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Fully tunable, non-invasive thermal biasing of gated nanostructures suitable for low-temperature studies.},
  url          = {http://dx.doi.org/10.1088/0957-4484/25/38/385704},
  doi          = {10.1088/0957-4484/25/38/385704},
  volume       = {25},
  year         = {2014},
}