Fully tunable, non-invasive thermal biasing of gated nanostructures suitable for low-temperature studies.
Gluschke, Jan-Göran LU ; Fahlvik Svensson, Sofia LU ; Thelander, Claes LU and Linke, Heiner LU
(2014)
In Nanotechnology
25(38).
- Abstract
- There is much recent interest in the thermoelectric (TE) characterization of single nanostructures at low temperatures, because such measurements yield information that is complementary to traditional conductance measurements, and because they may lead to novel paradigms for TE energy conversion. However, previously reported techniques for thermal biasing of nanostructures are difficult to use at low temperatures because of unintended global device heating, the lack of ability to continuously tune the thermal bias, or limited compatibility with gating techniques. By placing a heater directly on top of the electrical contact to a single InAs nanowire, we demonstrate fully tunable thermal biases of up to several tens of Kelvin, combined with... (More)
- There is much recent interest in the thermoelectric (TE) characterization of single nanostructures at low temperatures, because such measurements yield information that is complementary to traditional conductance measurements, and because they may lead to novel paradigms for TE energy conversion. However, previously reported techniques for thermal biasing of nanostructures are difficult to use at low temperatures because of unintended global device heating, the lack of ability to continuously tune the thermal bias, or limited compatibility with gating techniques. By placing a heater directly on top of the electrical contact to a single InAs nanowire, we demonstrate fully tunable thermal biases of up to several tens of Kelvin, combined with negligible overall heating of the device, and with full functionality of a back gate, in the temperature range between 4 K and 300 K. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4692488
- author
- Gluschke, Jan-Göran
LU
; Fahlvik Svensson, Sofia
LU
; Thelander, Claes
LU
and Linke, Heiner
LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 25
- issue
- 38
- article number
- 385704
- publisher
- IOP Publishing
- external identifiers
-
- pmid:25181529
- wos:000342503400008
- scopus:84938142650
- pmid:25181529
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/25/38/385704
- language
- English
- LU publication?
- yes
- id
- a536f8ef-a813-4635-be2b-539d3da78436 (old id 4692488)
- date added to LUP
- 2016-04-01 10:11:12
- date last changed
- 2023-10-26 03:26:46
@article{a536f8ef-a813-4635-be2b-539d3da78436,
abstract = {{There is much recent interest in the thermoelectric (TE) characterization of single nanostructures at low temperatures, because such measurements yield information that is complementary to traditional conductance measurements, and because they may lead to novel paradigms for TE energy conversion. However, previously reported techniques for thermal biasing of nanostructures are difficult to use at low temperatures because of unintended global device heating, the lack of ability to continuously tune the thermal bias, or limited compatibility with gating techniques. By placing a heater directly on top of the electrical contact to a single InAs nanowire, we demonstrate fully tunable thermal biases of up to several tens of Kelvin, combined with negligible overall heating of the device, and with full functionality of a back gate, in the temperature range between 4 K and 300 K.}},
author = {{Gluschke, Jan-Göran and Fahlvik Svensson, Sofia and Thelander, Claes and Linke, Heiner}},
issn = {{0957-4484}},
language = {{eng}},
number = {{38}},
publisher = {{IOP Publishing}},
series = {{Nanotechnology}},
title = {{Fully tunable, non-invasive thermal biasing of gated nanostructures suitable for low-temperature studies.}},
url = {{http://dx.doi.org/10.1088/0957-4484/25/38/385704}},
doi = {{10.1088/0957-4484/25/38/385704}},
volume = {{25}},
year = {{2014}},
}