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L-Band 180 degree passive phase shifter employing auto-tranformer in an SOS process

Amirkhanzadeh, Robabeh; Sjöland, Henrik LU ; Redoute, Jean-Michel; Nobbe, Dan and Faulkner, Mike (2014) IEEE International Symposium on Circuits and Systems (ISCAS), 2014 In Proc. of International Symposium on Circuits and systems (ISCAS) p.333-336
Abstract
In this paper, we present a new topology to implement a passive 180° phase shifter using on-chip auto-transformer in an SOS process. The measured results indicate a phase variation of less than 2° over the frequency range of 1.8-2.4GHz. An insertion loss of 2.3dB was measured at 2.1GHz. The phase shifter has a small footprint of 0.3 × 0.7mm2, which is almost three times less than a traditional high-pass/low-pass design. Post-layout simulations indicate similar performance in terms of bandwidth, phase accuracy and insertion loss for both circuits. Stacked switches are used to increase the power handling to +20dBm.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
Proc. of International Symposium on Circuits and systems (ISCAS)
pages
4 pages
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
IEEE International Symposium on Circuits and Systems (ISCAS), 2014
external identifiers
  • Scopus:84907398372
ISBN
978-1-4799-3431-7
DOI
10.1109/ISCAS.2014.6865133
language
English
LU publication?
yes
id
5fc464b0-6213-4aab-9530-a446c63028ff (old id 4696985)
date added to LUP
2014-10-14 09:51:22
date last changed
2017-01-01 08:08:27
@inproceedings{5fc464b0-6213-4aab-9530-a446c63028ff,
  abstract     = {In this paper, we present a new topology to implement a passive 180° phase shifter using on-chip auto-transformer in an SOS process. The measured results indicate a phase variation of less than 2° over the frequency range of 1.8-2.4GHz. An insertion loss of 2.3dB was measured at 2.1GHz. The phase shifter has a small footprint of 0.3 × 0.7mm2, which is almost three times less than a traditional high-pass/low-pass design. Post-layout simulations indicate similar performance in terms of bandwidth, phase accuracy and insertion loss for both circuits. Stacked switches are used to increase the power handling to +20dBm.},
  author       = {Amirkhanzadeh, Robabeh and Sjöland, Henrik and Redoute, Jean-Michel and Nobbe, Dan and Faulkner, Mike},
  booktitle    = {Proc. of International Symposium on Circuits and systems (ISCAS)},
  isbn         = {978-1-4799-3431-7},
  language     = {eng},
  pages        = {333--336},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {L-Band 180 degree passive phase shifter employing auto-tranformer in an SOS process},
  url          = {http://dx.doi.org/10.1109/ISCAS.2014.6865133},
  year         = {2014},
}