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Optical Characterization of III-Nitride and II-V Semiconductor Nanowires

Lindgren, David LU (2014)
Abstract
The optical properties of III-V semiconductor nanowires for optical devices have been investigated by

photoluminescence spectroscopy, cathodoluminescence spectroscopy and cathodoluminescence imaging. The

material systems that have been studied include the nitrides (InN, GaN and AlN) and ternaries, and a few common

phosphides and arsenides. Due to the different optical properties of the materials, they have different possible

emission ranges and applications, from ultra violet and visible to infrared light and from water purification and

illumination to optical communication. The different material systems have been investigated in separate projects,

but together they in principle share... (More)
The optical properties of III-V semiconductor nanowires for optical devices have been investigated by

photoluminescence spectroscopy, cathodoluminescence spectroscopy and cathodoluminescence imaging. The

material systems that have been studied include the nitrides (InN, GaN and AlN) and ternaries, and a few common

phosphides and arsenides. Due to the different optical properties of the materials, they have different possible

emission ranges and applications, from ultra violet and visible to infrared light and from water purification and

illumination to optical communication. The different material systems have been investigated in separate projects,

but together they in principle share the same goal, establishing the foundation of completely new, cheap, nanowirebased

LEDs with high external quantum efficiencies. (Less)
Please use this url to cite or link to this publication:
author
supervisor
opponent
  • Christen, Jürgen, Otto-von-Guericke-Universität Magdeburg, Germany
organization
publishing date
type
Thesis
publication status
published
subject
keywords
III-Nitride, III-V, Fysicumarkivet A:2014:Lindgren, Semiconductor, Nanowire, Photoluminescence, Cathodoluminescence
defense location
Lecture hall Rydbergsalen, Department of Physics, Sölvegatan 14, Lund University Faculty of Engineering
defense date
2014-11-07 09:30
ISBN
978-91-7623-127-2
language
English
LU publication?
yes
id
38ba4ac0-0f9c-4a14-8842-19d8f314df29 (old id 4699176)
date added to LUP
2014-10-29 11:52:39
date last changed
2016-09-19 08:45:17
@phdthesis{38ba4ac0-0f9c-4a14-8842-19d8f314df29,
  abstract     = {The optical properties of III-V semiconductor nanowires for optical devices have been investigated by<br/><br>
photoluminescence spectroscopy, cathodoluminescence spectroscopy and cathodoluminescence imaging. The<br/><br>
material systems that have been studied include the nitrides (InN, GaN and AlN) and ternaries, and a few common<br/><br>
phosphides and arsenides. Due to the different optical properties of the materials, they have different possible<br/><br>
emission ranges and applications, from ultra violet and visible to infrared light and from water purification and<br/><br>
illumination to optical communication. The different material systems have been investigated in separate projects,<br/><br>
but together they in principle share the same goal, establishing the foundation of completely new, cheap, nanowirebased<br/><br>
LEDs with high external quantum efficiencies.},
  author       = {Lindgren, David},
  isbn         = {978-91-7623-127-2},
  keyword      = {III-Nitride,III-V,Fysicumarkivet A:2014:Lindgren,Semiconductor,Nanowire,Photoluminescence,Cathodoluminescence},
  language     = {eng},
  school       = {Lund University},
  title        = {Optical Characterization of III-Nitride and II-V Semiconductor Nanowires},
  year         = {2014},
}