Optical Characterization of III-Nitride and II-V Semiconductor Nanowires
(2014)- Abstract
- The optical properties of III-V semiconductor nanowires for optical devices have been investigated by
photoluminescence spectroscopy, cathodoluminescence spectroscopy and cathodoluminescence imaging. The
material systems that have been studied include the nitrides (InN, GaN and AlN) and ternaries, and a few common
phosphides and arsenides. Due to the different optical properties of the materials, they have different possible
emission ranges and applications, from ultra violet and visible to infrared light and from water purification and
illumination to optical communication. The different material systems have been investigated in separate projects,
but together they in principle share... (More) - The optical properties of III-V semiconductor nanowires for optical devices have been investigated by
photoluminescence spectroscopy, cathodoluminescence spectroscopy and cathodoluminescence imaging. The
material systems that have been studied include the nitrides (InN, GaN and AlN) and ternaries, and a few common
phosphides and arsenides. Due to the different optical properties of the materials, they have different possible
emission ranges and applications, from ultra violet and visible to infrared light and from water purification and
illumination to optical communication. The different material systems have been investigated in separate projects,
but together they in principle share the same goal, establishing the foundation of completely new, cheap, nanowirebased
LEDs with high external quantum efficiencies. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4699176
- author
- Lindgren, David LU
- supervisor
- opponent
-
- Christen, Jürgen, Otto-von-Guericke-Universität Magdeburg, Germany
- organization
- publishing date
- 2014
- type
- Thesis
- publication status
- published
- subject
- keywords
- III-Nitride, III-V, Fysicumarkivet A:2014:Lindgren, Semiconductor, Nanowire, Photoluminescence, Cathodoluminescence
- defense location
- Lecture hall Rydbergsalen, Department of Physics, Sölvegatan 14, Lund University Faculty of Engineering
- defense date
- 2014-11-07 09:30:00
- ISBN
- 978-91-7623-127-2
- project
- A new way to grow nanowires: aerotaxy
- language
- English
- LU publication?
- yes
- id
- 38ba4ac0-0f9c-4a14-8842-19d8f314df29 (old id 4699176)
- date added to LUP
- 2016-04-04 13:35:27
- date last changed
- 2020-09-16 11:45:06
@phdthesis{38ba4ac0-0f9c-4a14-8842-19d8f314df29, abstract = {{The optical properties of III-V semiconductor nanowires for optical devices have been investigated by<br/><br> photoluminescence spectroscopy, cathodoluminescence spectroscopy and cathodoluminescence imaging. The<br/><br> material systems that have been studied include the nitrides (InN, GaN and AlN) and ternaries, and a few common<br/><br> phosphides and arsenides. Due to the different optical properties of the materials, they have different possible<br/><br> emission ranges and applications, from ultra violet and visible to infrared light and from water purification and<br/><br> illumination to optical communication. The different material systems have been investigated in separate projects,<br/><br> but together they in principle share the same goal, establishing the foundation of completely new, cheap, nanowirebased<br/><br> LEDs with high external quantum efficiencies.}}, author = {{Lindgren, David}}, isbn = {{978-91-7623-127-2}}, keywords = {{III-Nitride; III-V; Fysicumarkivet A:2014:Lindgren; Semiconductor; Nanowire; Photoluminescence; Cathodoluminescence}}, language = {{eng}}, school = {{Lund University}}, title = {{Optical Characterization of III-Nitride and II-V Semiconductor Nanowires}}, year = {{2014}}, }