A low band cellular terminal antenna impedance tuner in 130nm CMOS-SOI technology
(2014) European Solid State Circuits Conference (ESSCIRC), 2014 p.459-462- Abstract
- This paper presents a low band antenna impedance tuner in 130nm CMOS-SOI technology. It consists of three digitally controlled switched capacitor banks and two off-chip inductors and is intended for use in terminals supporting modern cellular standards like WCDMA and LTE. By using a negative gate bias in the off state, linearity can be improved and maintained. Measurements show an OIP3 exceeding +55dBm for all measured impedance states, which cover a VSWR of up to 5.4. The measured minimum loss is 1dB or lower in the frequency range from 700–900MHz with spurious emissions below −30dBm at +33dBm input power. The switched capacitors are implemented with eight stacked transistors to yield a voltage handling of at least 20V, and in order to... (More)
- This paper presents a low band antenna impedance tuner in 130nm CMOS-SOI technology. It consists of three digitally controlled switched capacitor banks and two off-chip inductors and is intended for use in terminals supporting modern cellular standards like WCDMA and LTE. By using a negative gate bias in the off state, linearity can be improved and maintained. Measurements show an OIP3 exceeding +55dBm for all measured impedance states, which cover a VSWR of up to 5.4. The measured minimum loss is 1dB or lower in the frequency range from 700–900MHz with spurious emissions below −30dBm at +33dBm input power. The switched capacitors are implemented with eight stacked transistors to yield a voltage handling of at least 20V, and in order to handle the large voltages custom designed capacitors are used. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4780682
- author
- Lindstrand, Jonas LU ; Vasilev, Ivaylo LU and Sjöland, Henrik LU
- organization
- publishing date
- 2014
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- [Host publication title missing]
- pages
- 4 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- European Solid State Circuits Conference (ESSCIRC), 2014
- conference location
- Venice, Italy
- conference dates
- 2014-09-22 - 2014-09-26
- external identifiers
-
- wos:000349461900108
- scopus:84909954313
- ISSN
- 1930-8833
- ISBN
- 978-1-4799-5694-4
- DOI
- 10.1109/ESSCIRC.2014.6942121
- project
- EIT_SOS VINNOVA Industrial Excellence Center - System Design on Silicon
- language
- English
- LU publication?
- yes
- id
- f026ee99-60f8-49ec-9f30-7df711086392 (old id 4780682)
- date added to LUP
- 2016-04-01 13:29:38
- date last changed
- 2024-04-10 06:38:00
@inproceedings{f026ee99-60f8-49ec-9f30-7df711086392, abstract = {{This paper presents a low band antenna impedance tuner in 130nm CMOS-SOI technology. It consists of three digitally controlled switched capacitor banks and two off-chip inductors and is intended for use in terminals supporting modern cellular standards like WCDMA and LTE. By using a negative gate bias in the off state, linearity can be improved and maintained. Measurements show an OIP3 exceeding +55dBm for all measured impedance states, which cover a VSWR of up to 5.4. The measured minimum loss is 1dB or lower in the frequency range from 700–900MHz with spurious emissions below −30dBm at +33dBm input power. The switched capacitors are implemented with eight stacked transistors to yield a voltage handling of at least 20V, and in order to handle the large voltages custom designed capacitors are used.}}, author = {{Lindstrand, Jonas and Vasilev, Ivaylo and Sjöland, Henrik}}, booktitle = {{[Host publication title missing]}}, isbn = {{978-1-4799-5694-4}}, issn = {{1930-8833}}, language = {{eng}}, pages = {{459--462}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{A low band cellular terminal antenna impedance tuner in 130nm CMOS-SOI technology}}, url = {{http://dx.doi.org/10.1109/ESSCIRC.2014.6942121}}, doi = {{10.1109/ESSCIRC.2014.6942121}}, year = {{2014}}, }