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A low band cellular terminal antenna impedance tuner in 130nm CMOS-SOI technology

Lindstrand, Jonas LU ; Vasilev, Ivaylo LU and Sjöland, Henrik LU (2014) European Solid State Circuits Conference (ESSCIRC), 2014 In [Host publication title missing] p.459-462
Abstract
This paper presents a low band antenna impedance tuner in 130nm CMOS-SOI technology. It consists of three digitally controlled switched capacitor banks and two off-chip inductors and is intended for use in terminals supporting modern cellular standards like WCDMA and LTE. By using a negative gate bias in the off state, linearity can be improved and maintained. Measurements show an OIP3 exceeding +55dBm for all measured impedance states, which cover a VSWR of up to 5.4. The measured minimum loss is 1dB or lower in the frequency range from 700–900MHz with spurious emissions below −30dBm at +33dBm input power. The switched capacitors are implemented with eight stacked transistors to yield a voltage handling of at least 20V, and in order to... (More)
This paper presents a low band antenna impedance tuner in 130nm CMOS-SOI technology. It consists of three digitally controlled switched capacitor banks and two off-chip inductors and is intended for use in terminals supporting modern cellular standards like WCDMA and LTE. By using a negative gate bias in the off state, linearity can be improved and maintained. Measurements show an OIP3 exceeding +55dBm for all measured impedance states, which cover a VSWR of up to 5.4. The measured minimum loss is 1dB or lower in the frequency range from 700–900MHz with spurious emissions below −30dBm at +33dBm input power. The switched capacitors are implemented with eight stacked transistors to yield a voltage handling of at least 20V, and in order to handle the large voltages custom designed capacitors are used. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
[Host publication title missing]
pages
4 pages
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
European Solid State Circuits Conference (ESSCIRC), 2014
external identifiers
  • wos:000349461900108
  • scopus:84909954313
ISSN
1930-8833
ISBN
978-1-4799-5694-4
DOI
10.1109/ESSCIRC.2014.6942121
project
EIT_SOS VINNOVA Industrial Excellence Center - System Design on Silicon
language
English
LU publication?
yes
id
f026ee99-60f8-49ec-9f30-7df711086392 (old id 4780682)
date added to LUP
2014-11-19 14:38:33
date last changed
2017-07-30 04:03:26
@inproceedings{f026ee99-60f8-49ec-9f30-7df711086392,
  abstract     = {This paper presents a low band antenna impedance tuner in 130nm CMOS-SOI technology. It consists of three digitally controlled switched capacitor banks and two off-chip inductors and is intended for use in terminals supporting modern cellular standards like WCDMA and LTE. By using a negative gate bias in the off state, linearity can be improved and maintained. Measurements show an OIP3 exceeding +55dBm for all measured impedance states, which cover a VSWR of up to 5.4. The measured minimum loss is 1dB or lower in the frequency range from 700–900MHz with spurious emissions below −30dBm at +33dBm input power. The switched capacitors are implemented with eight stacked transistors to yield a voltage handling of at least 20V, and in order to handle the large voltages custom designed capacitors are used.},
  author       = {Lindstrand, Jonas and Vasilev, Ivaylo and Sjöland, Henrik},
  booktitle    = {[Host publication title missing]},
  isbn         = {978-1-4799-5694-4},
  issn         = {1930-8833},
  language     = {eng},
  pages        = {459--462},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {A low band cellular terminal antenna impedance tuner in 130nm CMOS-SOI technology},
  url          = {http://dx.doi.org/10.1109/ESSCIRC.2014.6942121},
  year         = {2014},
}