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Suspended InAsnanowire gate-all-around field-effect transistors

Li, Qiang; Huang, Shaoyun; Pan, Dong; Wang, Jingyun; Zhao, Jianhua and Xu, Hongqi LU (2014) In Applied Physics Letters 105(11).
Abstract
Gate-all-around field-effect transistors are realized with thin, single-crystalline, pure-phase InAs nanowires grown by molecular beam epitaxy. At room temperature, the transistors show a desired high on-state current I-on of similar to 10 mu A arid an on-off current ratio I-on/I-off of as high as 10(6) at sourcedrain bias voltage of 50 mV and gate length of 1 mu m with a gate underlap spacing of 1 mu m from the source and from the drain. At low temperatures, the on-state current I-on is only slightly reduced, while the ratio I-on/I-off is increased to 10(7). The field-effect mobility in the nanowire channels is also investigated and found to be similar to 1500 cm(2)/V s at room temperature and similar to 2000 cm(2)/V s at low... (More)
Gate-all-around field-effect transistors are realized with thin, single-crystalline, pure-phase InAs nanowires grown by molecular beam epitaxy. At room temperature, the transistors show a desired high on-state current I-on of similar to 10 mu A arid an on-off current ratio I-on/I-off of as high as 10(6) at sourcedrain bias voltage of 50 mV and gate length of 1 mu m with a gate underlap spacing of 1 mu m from the source and from the drain. At low temperatures, the on-state current I-on is only slightly reduced, while the ratio I-on/I-off is increased to 10(7). The field-effect mobility in the nanowire channels is also investigated and found to be similar to 1500 cm(2)/V s at room temperature and similar to 2000 cm(2)/V s at low temperatures. The excellent performance of the transistors is explained in terms of strong electrostatic and quantum confinements of carriers in the nanowires. (C) 2014 A1P Publishing LLC. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
105
issue
11
publisher
American Institute of Physics
external identifiers
  • wos:000342995800073
  • scopus:84907465085
ISSN
0003-6951
DOI
10.1063/1.4896105
language
English
LU publication?
yes
id
098b8a98-163b-49f9-8142-869f35e7e9f6 (old id 4793265)
date added to LUP
2014-11-21 12:43:36
date last changed
2017-11-19 03:16:28
@article{098b8a98-163b-49f9-8142-869f35e7e9f6,
  abstract     = {Gate-all-around field-effect transistors are realized with thin, single-crystalline, pure-phase InAs nanowires grown by molecular beam epitaxy. At room temperature, the transistors show a desired high on-state current I-on of similar to 10 mu A arid an on-off current ratio I-on/I-off of as high as 10(6) at sourcedrain bias voltage of 50 mV and gate length of 1 mu m with a gate underlap spacing of 1 mu m from the source and from the drain. At low temperatures, the on-state current I-on is only slightly reduced, while the ratio I-on/I-off is increased to 10(7). The field-effect mobility in the nanowire channels is also investigated and found to be similar to 1500 cm(2)/V s at room temperature and similar to 2000 cm(2)/V s at low temperatures. The excellent performance of the transistors is explained in terms of strong electrostatic and quantum confinements of carriers in the nanowires. (C) 2014 A1P Publishing LLC.},
  articleno    = {113106},
  author       = {Li, Qiang and Huang, Shaoyun and Pan, Dong and Wang, Jingyun and Zhao, Jianhua and Xu, Hongqi},
  issn         = {0003-6951},
  language     = {eng},
  number       = {11},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Suspended InAsnanowire gate-all-around field-effect transistors},
  url          = {http://dx.doi.org/10.1063/1.4896105},
  volume       = {105},
  year         = {2014},
}