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Effect of Radius on Crystal Structure Selection in III-V Nanowire Growth

Mårtensson, Erik K. LU ; Lehmann, Sebastian LU ; Dick, Kimberly A. LU and Johansson, Jonas LU orcid (2020) In Crystal Growth and Design 20(8). p.5373-5379
Abstract

The radius of III-V nanowires is known to have an effect on the resulting crystal structure during particle-assisted growth; however, the causes behind this effect remain under debate. In this work, we use stochastic simulations of nanowire growth to evaluate how the radius (R) affects the growth dynamics and how this in turn affects the crystal structure selection. This is due to the geometry of the growing nanowire: The number of atoms in the seed particle scales with R3, and the number of III-V pairs per layer scales with R2. The influx of growth species to the seed can, for instance, scale with the surface area of the seed particle for direct impingement (?R2) or the perimeter of the nanowire for sidewall diffusion (?R1) or be... (More)

The radius of III-V nanowires is known to have an effect on the resulting crystal structure during particle-assisted growth; however, the causes behind this effect remain under debate. In this work, we use stochastic simulations of nanowire growth to evaluate how the radius (R) affects the growth dynamics and how this in turn affects the crystal structure selection. This is due to the geometry of the growing nanowire: The number of atoms in the seed particle scales with R3, and the number of III-V pairs per layer scales with R2. The influx of growth species to the seed can, for instance, scale with the surface area of the seed particle for direct impingement (?R2) or the perimeter of the nanowire for sidewall diffusion (?R1) or be radius-independent for substrate diffusion in some cases (?R0). These differences in radius dependencies cause the particle composition to change more rapidly for thinner nanowires, which in turn leads to nucleation at higher supersaturations and promotion of the wurtzite structure. In addition, the geometry can also make the influx V/III ratio dependent on the nanowire radius, which can influence the selection of crystal structure in different ways depending on the materials system and growth regime.

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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Crystal Growth and Design
volume
20
issue
8
pages
7 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85090016094
ISSN
1528-7483
DOI
10.1021/acs.cgd.0c00575
language
English
LU publication?
yes
id
47d87394-99aa-4ee1-91f6-2e0ebf383c8e
date added to LUP
2020-09-25 15:32:32
date last changed
2023-11-20 12:44:42
@article{47d87394-99aa-4ee1-91f6-2e0ebf383c8e,
  abstract     = {{<p>The radius of III-V nanowires is known to have an effect on the resulting crystal structure during particle-assisted growth; however, the causes behind this effect remain under debate. In this work, we use stochastic simulations of nanowire growth to evaluate how the radius (R) affects the growth dynamics and how this in turn affects the crystal structure selection. This is due to the geometry of the growing nanowire: The number of atoms in the seed particle scales with R3, and the number of III-V pairs per layer scales with R2. The influx of growth species to the seed can, for instance, scale with the surface area of the seed particle for direct impingement (?R2) or the perimeter of the nanowire for sidewall diffusion (?R1) or be radius-independent for substrate diffusion in some cases (?R0). These differences in radius dependencies cause the particle composition to change more rapidly for thinner nanowires, which in turn leads to nucleation at higher supersaturations and promotion of the wurtzite structure. In addition, the geometry can also make the influx V/III ratio dependent on the nanowire radius, which can influence the selection of crystal structure in different ways depending on the materials system and growth regime.</p>}},
  author       = {{Mårtensson, Erik K. and Lehmann, Sebastian and Dick, Kimberly A. and Johansson, Jonas}},
  issn         = {{1528-7483}},
  language     = {{eng}},
  number       = {{8}},
  pages        = {{5373--5379}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Crystal Growth and Design}},
  title        = {{Effect of Radius on Crystal Structure Selection in III-V Nanowire Growth}},
  url          = {{http://dx.doi.org/10.1021/acs.cgd.0c00575}},
  doi          = {{10.1021/acs.cgd.0c00575}},
  volume       = {{20}},
  year         = {{2020}},
}