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High thermal stability quasi-free-standing bilayer graphene formed on 4H-SiC(0001) via platinum intercalation

Xia, Chao; Johansson, Leif I.; Niu, Yuran LU ; Zakharov, Alexei LU ; Janzen, Erik and Virojanadara, Chariya (2014) In Carbon 79. p.631-635
Abstract
Influences on electronic structure induced by platinum (Pt) deposited on monolayer graphene grown on SiC(0001) are investigated by photoelectron spectroscopy (PES), selected area low energy electron diffraction (mu-LEED) and angle resolved photoelectron spectroscopy (ARPES) techniques at the MAX Laboratory. Stable monolayer graphene electronic properties are observed after Pt deposition and after annealing at temperatures below 600 degrees C. At >= 600 degrees C platinum silicide forms at the graphene/SiC interface. Annealing at 900 degrees C results in an efficient decoupling of the carbon buffer layer from the SiC substrate and transformation into a second graphene layer. At this stage a quasi-free standing bi-layer graphene sample is... (More)
Influences on electronic structure induced by platinum (Pt) deposited on monolayer graphene grown on SiC(0001) are investigated by photoelectron spectroscopy (PES), selected area low energy electron diffraction (mu-LEED) and angle resolved photoelectron spectroscopy (ARPES) techniques at the MAX Laboratory. Stable monolayer graphene electronic properties are observed after Pt deposition and after annealing at temperatures below 600 degrees C. At >= 600 degrees C platinum silicide forms at the graphene/SiC interface. Annealing at 900 degrees C results in an efficient decoupling of the carbon buffer layer from the SiC substrate and transformation into a second graphene layer. At this stage a quasi-free standing bi-layer graphene sample is obtained. The new superstructure spots then appearing in mu-LEED pattern suggest formation of an ordered platinum silicide at the interface. This silicide is found to be stable even after annealing at temperature up to 1200 degrees C. (C) 2014 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/3.0/). (Less)
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author
organization
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type
Contribution to journal
publication status
published
subject
in
Carbon
volume
79
pages
631 - 635
publisher
Elsevier
external identifiers
  • wos:000342657100066
  • scopus:84920380980
ISSN
0008-6223
DOI
10.1016/j.carbon.2014.08.027
language
English
LU publication?
yes
id
7f66b8c4-1ccd-4bb2-9a8c-d15e41723075 (old id 4803343)
date added to LUP
2014-12-01 08:56:08
date last changed
2017-01-08 03:18:17
@article{7f66b8c4-1ccd-4bb2-9a8c-d15e41723075,
  abstract     = {Influences on electronic structure induced by platinum (Pt) deposited on monolayer graphene grown on SiC(0001) are investigated by photoelectron spectroscopy (PES), selected area low energy electron diffraction (mu-LEED) and angle resolved photoelectron spectroscopy (ARPES) techniques at the MAX Laboratory. Stable monolayer graphene electronic properties are observed after Pt deposition and after annealing at temperatures below 600 degrees C. At >= 600 degrees C platinum silicide forms at the graphene/SiC interface. Annealing at 900 degrees C results in an efficient decoupling of the carbon buffer layer from the SiC substrate and transformation into a second graphene layer. At this stage a quasi-free standing bi-layer graphene sample is obtained. The new superstructure spots then appearing in mu-LEED pattern suggest formation of an ordered platinum silicide at the interface. This silicide is found to be stable even after annealing at temperature up to 1200 degrees C. (C) 2014 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/3.0/).},
  author       = {Xia, Chao and Johansson, Leif I. and Niu, Yuran and Zakharov, Alexei and Janzen, Erik and Virojanadara, Chariya},
  issn         = {0008-6223},
  language     = {eng},
  pages        = {631--635},
  publisher    = {Elsevier},
  series       = {Carbon},
  title        = {High thermal stability quasi-free-standing bilayer graphene formed on 4H-SiC(0001) via platinum intercalation},
  url          = {http://dx.doi.org/10.1016/j.carbon.2014.08.027},
  volume       = {79},
  year         = {2014},
}