Accurate Time - Domain Modeling of Multi-Finger pHEMT layout Structure based on Transmission line Theory
Aliakbariabar, Hanieh LU
; Abdipour, A.
and Mirzavand, R.
(2015)
In AEÜ - International Journal of Electronics and Communications
69(1).
p.215-225
- Abstract
- In this paper, a fully distributed modeling of double gate InGaAs pHEMT as a 5-line active coupled transmission line is described. In order to apply the transmission line theory, a proper equivalent lumped circuit model is allocated for the differential length of the double gate quintuple line transistor and the active multi-conductor transmission line equations are obtained. The passive element values are extracted through numerical analysis and conversion of the single gate active small signal model to the double gate one is performed by an introduced scaling method. These equations are solved by the finite difference time domain technique. The simulation results are compared with the results of conventional slice modeling which are in... (More)
- In this paper, a fully distributed modeling of double gate InGaAs pHEMT as a 5-line active coupled transmission line is described. In order to apply the transmission line theory, a proper equivalent lumped circuit model is allocated for the differential length of the double gate quintuple line transistor and the active multi-conductor transmission line equations are obtained. The passive element values are extracted through numerical analysis and conversion of the single gate active small signal model to the double gate one is performed by an introduced scaling method. These equations are solved by the finite difference time domain technique. The simulation results are compared with the results of conventional slice modeling which are in agreement at low frequencies but show differences, at high frequencies. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4829ed35-fddd-4a96-9220-b4d4814506ad
- author
- Aliakbariabar, Hanieh
LU
; Abdipour, A.
and Mirzavand, R.
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- in
- AEÜ - International Journal of Electronics and Communications
- volume
- 69
- issue
- 1
- pages
- 215 - 225
- publisher
- Elsevier
- external identifiers
-
- scopus:84940167369
- ISSN
- 1434-8411
- DOI
- 10.1016/j.aeue.2014.09.007
- language
- English
- LU publication?
- no
- id
- 4829ed35-fddd-4a96-9220-b4d4814506ad
- date added to LUP
- 2017-12-13 14:07:24
- date last changed
- 2022-03-02 02:21:14
@article{4829ed35-fddd-4a96-9220-b4d4814506ad,
abstract = {{In this paper, a fully distributed modeling of double gate InGaAs pHEMT as a 5-line active coupled transmission line is described. In order to apply the transmission line theory, a proper equivalent lumped circuit model is allocated for the differential length of the double gate quintuple line transistor and the active multi-conductor transmission line equations are obtained. The passive element values are extracted through numerical analysis and conversion of the single gate active small signal model to the double gate one is performed by an introduced scaling method. These equations are solved by the finite difference time domain technique. The simulation results are compared with the results of conventional slice modeling which are in agreement at low frequencies but show differences, at high frequencies.}},
author = {{Aliakbariabar, Hanieh and Abdipour, A. and Mirzavand, R.}},
issn = {{1434-8411}},
language = {{eng}},
number = {{1}},
pages = {{215--225}},
publisher = {{Elsevier}},
series = {{AEÜ - International Journal of Electronics and Communications}},
title = {{Accurate Time - Domain Modeling of Multi-Finger pHEMT layout Structure based on Transmission line Theory}},
url = {{http://dx.doi.org/10.1016/j.aeue.2014.09.007}},
doi = {{10.1016/j.aeue.2014.09.007}},
volume = {{69}},
year = {{2015}},
}