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Engineering the Size Distributions of Ordered GaAs Nanowires on Silicon

Vukajlovic-Plestina, Jelena ; Kim, Wonjong ; Dubrovski, Vladimir G ; Tütüncüoğlu, Gözde ; Lagier, Maxime ; Potts, Heidi LU ; Friedl, Martin and Fontcuberta I Morral, Anna (2017) In Nano Letters 17(7). p.4101-4108
Abstract

Reproducible integration of III-V semiconductors on silicon can open new path toward CMOS compatible optoelectronics and novel design schemes in next generation solar cells. Ordered arrays of nanowires could accomplish this task, provided they are obtained in high yield and uniformity. In this work, we provide understanding on the physical factors affecting size uniformity in ordered GaAs arrays grown on silicon. We show that the length and diameter distributions in the initial stage of growth are not much influenced by the Poissonian fluctuation-induced broadening, but rather are determined by the long incubation stage. We also show that the size distributions are consistent with the double exponential shapes typical for macroscopic... (More)

Reproducible integration of III-V semiconductors on silicon can open new path toward CMOS compatible optoelectronics and novel design schemes in next generation solar cells. Ordered arrays of nanowires could accomplish this task, provided they are obtained in high yield and uniformity. In this work, we provide understanding on the physical factors affecting size uniformity in ordered GaAs arrays grown on silicon. We show that the length and diameter distributions in the initial stage of growth are not much influenced by the Poissonian fluctuation-induced broadening, but rather are determined by the long incubation stage. We also show that the size distributions are consistent with the double exponential shapes typical for macroscopic nucleation with a large critical length after which the nanowires grow irreversibly. The size uniformity is dramatically improved by increasing the As4 flux, suggesting a new path for obtaining highly uniform arrays of GaAs nanowires on silicon.

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author
; ; ; ; ; ; and
publishing date
type
Contribution to journal
publication status
published
in
Nano Letters
volume
17
issue
7
pages
8 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85024114409
  • pmid:28613909
ISSN
1530-6992
DOI
10.1021/acs.nanolett.7b00842
language
English
LU publication?
no
id
483ae203-72c3-4754-929c-45ebfceaaba8
date added to LUP
2019-05-15 09:52:30
date last changed
2021-03-09 04:22:07
@article{483ae203-72c3-4754-929c-45ebfceaaba8,
  abstract     = {<p>Reproducible integration of III-V semiconductors on silicon can open new path toward CMOS compatible optoelectronics and novel design schemes in next generation solar cells. Ordered arrays of nanowires could accomplish this task, provided they are obtained in high yield and uniformity. In this work, we provide understanding on the physical factors affecting size uniformity in ordered GaAs arrays grown on silicon. We show that the length and diameter distributions in the initial stage of growth are not much influenced by the Poissonian fluctuation-induced broadening, but rather are determined by the long incubation stage. We also show that the size distributions are consistent with the double exponential shapes typical for macroscopic nucleation with a large critical length after which the nanowires grow irreversibly. The size uniformity is dramatically improved by increasing the As4 flux, suggesting a new path for obtaining highly uniform arrays of GaAs nanowires on silicon.</p>},
  author       = {Vukajlovic-Plestina, Jelena and Kim, Wonjong and Dubrovski, Vladimir G and Tütüncüoğlu, Gözde and Lagier, Maxime and Potts, Heidi and Friedl, Martin and Fontcuberta I Morral, Anna},
  issn         = {1530-6992},
  language     = {eng},
  month        = {07},
  number       = {7},
  pages        = {4101--4108},
  publisher    = {The American Chemical Society (ACS)},
  series       = {Nano Letters},
  title        = {Engineering the Size Distributions of Ordered GaAs Nanowires on Silicon},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.7b00842},
  doi          = {10.1021/acs.nanolett.7b00842},
  volume       = {17},
  year         = {2017},
}