InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K
(2014) In Electronics Letters 50(23). p.1731-1732- Abstract
- High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4865218
- author
- Park, M. S. ; Jain, Vishal LU ; Lee, E. H. ; Kim, S. H. ; Pettersson, Håkan LU ; Wang, Q. ; Song, J. D. and Choi, W. J.
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- millimetre wave integrated circuits, power combiners, transmission, lines, millimetre-wave broadband waveguide based power combiner, lossy, waveguide-based power combiner, lossy planar transmission lines, reflection coefficients, millimetre-wave broadband high solid-state, power, frequency 26, 5 GHz to 40 GHz
- in
- Electronics Letters
- volume
- 50
- issue
- 23
- pages
- 1731 - 1732
- publisher
- IEE
- external identifiers
-
- wos:000344942600045
- scopus:84912136838
- ISSN
- 1350-911X
- DOI
- 10.1049/el.2014.2437
- language
- English
- LU publication?
- yes
- id
- d74250cb-28f9-4e6c-b278-fe0a521f1d6a (old id 4865218)
- date added to LUP
- 2016-04-01 13:55:23
- date last changed
- 2023-11-12 23:58:44
@article{d74250cb-28f9-4e6c-b278-fe0a521f1d6a, abstract = {{High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.}}, author = {{Park, M. S. and Jain, Vishal and Lee, E. H. and Kim, S. H. and Pettersson, Håkan and Wang, Q. and Song, J. D. and Choi, W. J.}}, issn = {{1350-911X}}, keywords = {{millimetre wave integrated circuits; power combiners; transmission; lines; millimetre-wave broadband waveguide based power combiner; lossy; waveguide-based power combiner; lossy planar transmission lines; reflection coefficients; millimetre-wave broadband high solid-state; power; frequency 26; 5 GHz to 40 GHz}}, language = {{eng}}, number = {{23}}, pages = {{1731--1732}}, publisher = {{IEE}}, series = {{Electronics Letters}}, title = {{InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K}}, url = {{http://dx.doi.org/10.1049/el.2014.2437}}, doi = {{10.1049/el.2014.2437}}, volume = {{50}}, year = {{2014}}, }