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InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K

Park, M. S.; Jain, Vishal LU ; Lee, E. H.; Kim, S. H.; Pettersson, Håkan LU ; Wang, Q.; Song, J. D. and Choi, W. J. (2014) In Electronics Letters 50(23). p.1731-1732
Abstract
High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
millimetre wave integrated circuits, power combiners, transmission, lines, millimetre-wave broadband waveguide based power combiner, lossy, waveguide-based power combiner, lossy planar transmission lines, reflection coefficients, millimetre-wave broadband high solid-state, power, frequency 26, 5 GHz to 40 GHz
in
Electronics Letters
volume
50
issue
23
pages
1731 - 1732
publisher
IEE
external identifiers
  • wos:000344942600045
  • scopus:84912136838
ISSN
1350-911X
DOI
10.1049/el.2014.2437
language
English
LU publication?
yes
id
d74250cb-28f9-4e6c-b278-fe0a521f1d6a (old id 4865218)
date added to LUP
2014-12-18 10:58:28
date last changed
2017-08-06 04:06:12
@article{d74250cb-28f9-4e6c-b278-fe0a521f1d6a,
  abstract     = {High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.},
  author       = {Park, M. S. and Jain, Vishal and Lee, E. H. and Kim, S. H. and Pettersson, Håkan and Wang, Q. and Song, J. D. and Choi, W. J.},
  issn         = {1350-911X},
  keyword      = {millimetre wave integrated circuits,power combiners,transmission,lines,millimetre-wave broadband waveguide based power combiner,lossy,waveguide-based power combiner,lossy planar transmission lines,reflection coefficients,millimetre-wave broadband high solid-state,power,frequency 26,5 GHz to 40 GHz},
  language     = {eng},
  number       = {23},
  pages        = {1731--1732},
  publisher    = {IEE},
  series       = {Electronics Letters},
  title        = {InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K},
  url          = {http://dx.doi.org/10.1049/el.2014.2437},
  volume       = {50},
  year         = {2014},
}