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Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP-InP Core-Shell Nanowires

Göransson, D. J.O. LU ; Borgström, M. T. LU ; Huang, Y. Q.; Messing, M. E. LU ; Hessman, D. LU ; Buyanova, I. A.; Chen, W. M. and Xu, H. Q. LU (2019) In Nano Letters 19(4). p.2674-2681
Abstract

We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP core-shell nanowires. The core-shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are characterized by transmission electron microscopy, X-ray diffraction, micro-photoluminescence (μPL) spectroscopy, and micro-Raman (μ-Raman) spectroscopy measurements. We observe that the core-shell nanowires are of wurtzite (WZ) crystal phase and are coherently strained with the core and the shell having the same number of atomic planes in each nanowire. We determine the predominantly uniaxial strains formed in the core-shell nanowires along the nanowire growth axis and demonstrate that the strains can be... (More)

We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP core-shell nanowires. The core-shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are characterized by transmission electron microscopy, X-ray diffraction, micro-photoluminescence (μPL) spectroscopy, and micro-Raman (μ-Raman) spectroscopy measurements. We observe that the core-shell nanowires are of wurtzite (WZ) crystal phase and are coherently strained with the core and the shell having the same number of atomic planes in each nanowire. We determine the predominantly uniaxial strains formed in the core-shell nanowires along the nanowire growth axis and demonstrate that the strains can be described using an analytical expression. The bandgap energies in the strained WZ InAsP core materials are extracted from the μPL measurements of individual core-shell nanowires. The coherently strained core-shell nanowires demonstrated in this work offer the potentials for use in constructing novel optoelectronic devices and for development of piezoelectric photovoltaic devices.

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Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
core-shell nanowire, InAsP, InP, Strain, wurtzite, μ-Raman, μPL
in
Nano Letters
volume
19
issue
4
pages
8 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85064175484
ISSN
1530-6984
DOI
10.1021/acs.nanolett.9b00644
language
English
LU publication?
yes
id
4899eefc-460f-40f6-ad85-4f65e5800eff
date added to LUP
2019-04-24 14:50:38
date last changed
2019-05-14 04:54:10
@article{4899eefc-460f-40f6-ad85-4f65e5800eff,
  abstract     = {<p>We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP core-shell nanowires. The core-shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are characterized by transmission electron microscopy, X-ray diffraction, micro-photoluminescence (μPL) spectroscopy, and micro-Raman (μ-Raman) spectroscopy measurements. We observe that the core-shell nanowires are of wurtzite (WZ) crystal phase and are coherently strained with the core and the shell having the same number of atomic planes in each nanowire. We determine the predominantly uniaxial strains formed in the core-shell nanowires along the nanowire growth axis and demonstrate that the strains can be described using an analytical expression. The bandgap energies in the strained WZ InAsP core materials are extracted from the μPL measurements of individual core-shell nanowires. The coherently strained core-shell nanowires demonstrated in this work offer the potentials for use in constructing novel optoelectronic devices and for development of piezoelectric photovoltaic devices.</p>},
  author       = {Göransson, D. J.O. and Borgström, M. T. and Huang, Y. Q. and Messing, M. E. and Hessman, D. and Buyanova, I. A. and Chen, W. M. and Xu, H. Q.},
  issn         = {1530-6984},
  keyword      = {core-shell nanowire,InAsP,InP,Strain,wurtzite,μ-Raman,μPL},
  language     = {eng},
  number       = {4},
  pages        = {2674--2681},
  publisher    = {The American Chemical Society (ACS)},
  series       = {Nano Letters},
  title        = {Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP-InP Core-Shell Nanowires},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.9b00644},
  volume       = {19},
  year         = {2019},
}