Crystal Phases in III-V Nanowires: From Random Toward Engineered Polytypism
(2011) In IEEE Journal of Selected Topics in Quantum Electronics 17(4). p.829-846- Abstract
- III-V nanowires (NWs) are promising for a wide range of applications, ranging from optics to electronics, energy, and biological sensing. The structural quality of NWs is of paramount importance for the performance of such future NW-based devices. Random structural defects and polytypism occur naturally in semiconductor NWs, but progress both on the theoretical understanding and experimental control have been achieved recently. Here, we review progress towards the realization of perfect wurtzite and zinc-blende phases in III-VNWs, eventually leading to true phase engineering in single NWs.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2162954
- author
- Caroff, Philippe LU ; Bolinsson, Jessica LU and Johansson, Jonas LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Gold-assisted vapor-liquid-solid (VLS) growth, III-V nanowires (NWs), metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), nucleation kinetics modeling, polytypism, stacking faults (SFs), thermodynamic modeling, twin plane (TP), wurtzite (WZ), zinc blende (ZB)
- in
- IEEE Journal of Selected Topics in Quantum Electronics
- volume
- 17
- issue
- 4
- pages
- 829 - 846
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000293755500009
- scopus:80051705411
- ISSN
- 1077-260X
- DOI
- 10.1109/JSTQE.2010.2070790
- language
- English
- LU publication?
- yes
- id
- 48cc8cff-c023-4971-900c-75d211437eda (old id 2162954)
- date added to LUP
- 2016-04-01 14:35:49
- date last changed
- 2023-11-13 09:29:01
@article{48cc8cff-c023-4971-900c-75d211437eda, abstract = {{III-V nanowires (NWs) are promising for a wide range of applications, ranging from optics to electronics, energy, and biological sensing. The structural quality of NWs is of paramount importance for the performance of such future NW-based devices. Random structural defects and polytypism occur naturally in semiconductor NWs, but progress both on the theoretical understanding and experimental control have been achieved recently. Here, we review progress towards the realization of perfect wurtzite and zinc-blende phases in III-VNWs, eventually leading to true phase engineering in single NWs.}}, author = {{Caroff, Philippe and Bolinsson, Jessica and Johansson, Jonas}}, issn = {{1077-260X}}, keywords = {{Gold-assisted vapor-liquid-solid (VLS) growth; III-V nanowires (NWs); metalorganic vapor phase epitaxy (MOVPE); molecular beam epitaxy (MBE); nucleation kinetics modeling; polytypism; stacking faults (SFs); thermodynamic modeling; twin plane (TP); wurtzite (WZ); zinc blende (ZB)}}, language = {{eng}}, number = {{4}}, pages = {{829--846}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Journal of Selected Topics in Quantum Electronics}}, title = {{Crystal Phases in III-V Nanowires: From Random Toward Engineered Polytypism}}, url = {{http://dx.doi.org/10.1109/JSTQE.2010.2070790}}, doi = {{10.1109/JSTQE.2010.2070790}}, volume = {{17}}, year = {{2011}}, }