Advanced

InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition

Ji, Xianghai; Yang, Xiaoguang; Du, Wenna; Pan, Huayong; Luo, Shuai; Ji, Haiming; Xu, H. Q. LU and Yang, Tao (2016) In Nanotechnology 27(27).
Abstract

We report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si substrates using metal-organic chemical vapor deposition with no assistance from foreign catalysts. Sb adatoms were observed to strongly influence the morphology of the GaSb shell. In particular, Ga droplets form on the nanowire tips when a relatively low TMSb flow rate is used, whereas the droplets are missing and the radial growth of the GaSb is enhanced due to a reduction in the diffusion length of the Ga adatoms when the TMSb flow rate is increased. Moreover, transmission electron microscopy measurements revealed that the GaSb shell coherently grew on the InAs core. The results obtained here show that the InAs/GaSb core-shell nanowires... (More)

We report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si substrates using metal-organic chemical vapor deposition with no assistance from foreign catalysts. Sb adatoms were observed to strongly influence the morphology of the GaSb shell. In particular, Ga droplets form on the nanowire tips when a relatively low TMSb flow rate is used, whereas the droplets are missing and the radial growth of the GaSb is enhanced due to a reduction in the diffusion length of the Ga adatoms when the TMSb flow rate is increased. Moreover, transmission electron microscopy measurements revealed that the GaSb shell coherently grew on the InAs core. The results obtained here show that the InAs/GaSb core-shell nanowires grown using the Si platform have strong potential in the fabrication of future nanometer-scale devices and in the study of fundamental quantum physics.

(Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
core-shell heterostructure, InAs/GaSb, metal-organic chemical vapor deposition, nanowires
in
Nanotechnology
volume
27
issue
27
publisher
IOP Publishing
external identifiers
  • scopus:84975047110
  • wos:000377493700016
ISSN
0957-4484
DOI
10.1088/0957-4484/27/27/275601
language
English
LU publication?
yes
id
493261e7-4356-4122-b990-19986e840d86
date added to LUP
2017-01-27 11:10:54
date last changed
2017-09-18 11:34:29
@article{493261e7-4356-4122-b990-19986e840d86,
  abstract     = {<p>We report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si substrates using metal-organic chemical vapor deposition with no assistance from foreign catalysts. Sb adatoms were observed to strongly influence the morphology of the GaSb shell. In particular, Ga droplets form on the nanowire tips when a relatively low TMSb flow rate is used, whereas the droplets are missing and the radial growth of the GaSb is enhanced due to a reduction in the diffusion length of the Ga adatoms when the TMSb flow rate is increased. Moreover, transmission electron microscopy measurements revealed that the GaSb shell coherently grew on the InAs core. The results obtained here show that the InAs/GaSb core-shell nanowires grown using the Si platform have strong potential in the fabrication of future nanometer-scale devices and in the study of fundamental quantum physics.</p>},
  articleno    = {275601},
  author       = {Ji, Xianghai and Yang, Xiaoguang and Du, Wenna and Pan, Huayong and Luo, Shuai and Ji, Haiming and Xu, H. Q. and Yang, Tao},
  issn         = {0957-4484},
  keyword      = {core-shell heterostructure,InAs/GaSb,metal-organic chemical vapor deposition,nanowires},
  language     = {eng},
  month        = {05},
  number       = {27},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition},
  url          = {http://dx.doi.org/10.1088/0957-4484/27/27/275601},
  volume       = {27},
  year         = {2016},
}