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A 3.4mW 65nm CMOS 5th Order Programmable Active-RC Channel Select Filter for LTE Receivers

Abdulaziz, Mohammed LU ; Nejdel, Anders LU ; Törmänen, Markus LU and Sjöland, Henrik LU (2013) RFIC 2013 p.217-220
Abstract
In this work a low power 5th order chebyshev

active-RC low pass filter that meets Rel-8 LTE receiver

requirements has been designed with programmable bandwidth

and overshoot. Designed for a homodyne LTE receiver,

filter bandwidths from 700kHz to 10MHz are supported.

The bandwidth of the operational amplifiers is improved

using a novel phase enhancement technique. The filter was

implemented in 65nm CMOS technology with a core area

of 0.29mm2. Its total current consumption is 2.83mA from a

1.2V supply. The measured input referred noise is 39nV/



Hz,

the in-band IIP3 is 21.5dBm, at the band-edge the IIP3

is 20.7dBm, the... (More)
In this work a low power 5th order chebyshev

active-RC low pass filter that meets Rel-8 LTE receiver

requirements has been designed with programmable bandwidth

and overshoot. Designed for a homodyne LTE receiver,

filter bandwidths from 700kHz to 10MHz are supported.

The bandwidth of the operational amplifiers is improved

using a novel phase enhancement technique. The filter was

implemented in 65nm CMOS technology with a core area

of 0.29mm2. Its total current consumption is 2.83mA from a

1.2V supply. The measured input referred noise is 39nV/



Hz,

the in-band IIP3 is 21.5dBm, at the band-edge the IIP3

is 20.7dBm, the out-of-band IIP3 is 20.6dBm, and the

compression point is 0dBm. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Active filters, low pass filters, low power electronics, CMOS technology, Operational Amplifiers.
host publication
IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2013
pages
217 - 220
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
RFIC 2013
conference location
Seattle, United States
conference dates
2013-06-02
external identifiers
  • scopus:84883423910
ISSN
1529-2517
ISBN
978-1-4673-6059-3
DOI
10.1109/RFIC.2013.6569565
language
English
LU publication?
yes
id
4959a864-04f7-484f-9e05-d5b4c982c43a (old id 3615776)
date added to LUP
2013-03-22 13:05:15
date last changed
2019-05-28 01:48:23
@inproceedings{4959a864-04f7-484f-9e05-d5b4c982c43a,
  abstract     = {In this work a low power 5th order chebyshev<br/><br>
active-RC low pass filter that meets Rel-8 LTE receiver<br/><br>
requirements has been designed with programmable bandwidth<br/><br>
and overshoot. Designed for a homodyne LTE receiver,<br/><br>
filter bandwidths from 700kHz to 10MHz are supported.<br/><br>
The bandwidth of the operational amplifiers is improved<br/><br>
using a novel phase enhancement technique. The filter was<br/><br>
implemented in 65nm CMOS technology with a core area<br/><br>
of 0.29mm2. Its total current consumption is 2.83mA from a<br/><br>
1.2V supply. The measured input referred noise is 39nV/<br/><br>
√<br/><br>
Hz,<br/><br>
the in-band IIP3 is 21.5dBm, at the band-edge the IIP3<br/><br>
is 20.7dBm, the out-of-band IIP3 is 20.6dBm, and the<br/><br>
compression point is 0dBm.},
  author       = {Abdulaziz, Mohammed and Nejdel, Anders and Törmänen, Markus and Sjöland, Henrik},
  isbn         = {978-1-4673-6059-3},
  issn         = {1529-2517},
  keyword      = {Active filters,low pass filters,low power electronics,CMOS technology,Operational Amplifiers.},
  language     = {eng},
  location     = {Seattle, United States},
  pages        = {217--220},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {A 3.4mW 65nm CMOS 5th Order Programmable Active-RC Channel Select Filter for LTE Receivers},
  url          = {http://dx.doi.org/10.1109/RFIC.2013.6569565},
  year         = {2013},
}