A 3.4mW 65nm CMOS 5th Order Programmable Active-RC Channel Select Filter for LTE Receivers
(2013) RFIC 2013 p.217-220- Abstract
- In this work a low power 5th order chebyshev
active-RC low pass filter that meets Rel-8 LTE receiver
requirements has been designed with programmable bandwidth
and overshoot. Designed for a homodyne LTE receiver,
filter bandwidths from 700kHz to 10MHz are supported.
The bandwidth of the operational amplifiers is improved
using a novel phase enhancement technique. The filter was
implemented in 65nm CMOS technology with a core area
of 0.29mm2. Its total current consumption is 2.83mA from a
1.2V supply. The measured input referred noise is 39nV/
√
Hz,
the in-band IIP3 is 21.5dBm, at the band-edge the IIP3
is 20.7dBm, the... (More) - In this work a low power 5th order chebyshev
active-RC low pass filter that meets Rel-8 LTE receiver
requirements has been designed with programmable bandwidth
and overshoot. Designed for a homodyne LTE receiver,
filter bandwidths from 700kHz to 10MHz are supported.
The bandwidth of the operational amplifiers is improved
using a novel phase enhancement technique. The filter was
implemented in 65nm CMOS technology with a core area
of 0.29mm2. Its total current consumption is 2.83mA from a
1.2V supply. The measured input referred noise is 39nV/
√
Hz,
the in-band IIP3 is 21.5dBm, at the band-edge the IIP3
is 20.7dBm, the out-of-band IIP3 is 20.6dBm, and the
compression point is 0dBm. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3615776
- author
- Abdulaziz, Mohammed
LU
; Nejdel, Anders
LU
; Törmänen, Markus
LU
and Sjöland, Henrik
LU
- organization
- publishing date
- 2013
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Active filters, low pass filters, low power electronics, CMOS technology, Operational Amplifiers.
- host publication
- IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2013
- pages
- 217 - 220
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- RFIC 2013
- conference location
- Seattle, United States
- conference dates
- 2013-06-02
- external identifiers
-
- scopus:84883423910
- ISSN
- 1529-2517
- ISBN
- 978-1-4673-6059-3
- DOI
- 10.1109/RFIC.2013.6569565
- language
- English
- LU publication?
- yes
- id
- 4959a864-04f7-484f-9e05-d5b4c982c43a (old id 3615776)
- date added to LUP
- 2016-04-01 12:51:22
- date last changed
- 2025-10-14 11:48:45
@inproceedings{4959a864-04f7-484f-9e05-d5b4c982c43a,
abstract = {{In this work a low power 5th order chebyshev<br/><br>
active-RC low pass filter that meets Rel-8 LTE receiver<br/><br>
requirements has been designed with programmable bandwidth<br/><br>
and overshoot. Designed for a homodyne LTE receiver,<br/><br>
filter bandwidths from 700kHz to 10MHz are supported.<br/><br>
The bandwidth of the operational amplifiers is improved<br/><br>
using a novel phase enhancement technique. The filter was<br/><br>
implemented in 65nm CMOS technology with a core area<br/><br>
of 0.29mm2. Its total current consumption is 2.83mA from a<br/><br>
1.2V supply. The measured input referred noise is 39nV/<br/><br>
√<br/><br>
Hz,<br/><br>
the in-band IIP3 is 21.5dBm, at the band-edge the IIP3<br/><br>
is 20.7dBm, the out-of-band IIP3 is 20.6dBm, and the<br/><br>
compression point is 0dBm.}},
author = {{Abdulaziz, Mohammed and Nejdel, Anders and Törmänen, Markus and Sjöland, Henrik}},
booktitle = {{IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2013}},
isbn = {{978-1-4673-6059-3}},
issn = {{1529-2517}},
keywords = {{Active filters; low pass filters; low power electronics; CMOS technology; Operational Amplifiers.}},
language = {{eng}},
pages = {{217--220}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
title = {{A 3.4mW 65nm CMOS 5th Order Programmable Active-RC Channel Select Filter for LTE Receivers}},
url = {{http://dx.doi.org/10.1109/RFIC.2013.6569565}},
doi = {{10.1109/RFIC.2013.6569565}},
year = {{2013}},
}