Composition-dependent crystallization of alternative gate dielectrics.
(2003) In Applied Physics Letters 83(7). p.1459-1461- Abstract
- We have investigated the crystallization of amorphous oxides that are considered likely candidates to replace amorphous SiO2 as the gate dielectric in advanced field-effect transistors. To avoid crystallization, the mole fraction of main-group oxide in the Zr–Si–O, Zr–Al–O, and Hf–Si–O systems must be greater than 83%, 65%, and 78%, respectively, leading to a maximum useful dielectric constant of only 6.9, 12.7, and 6.6, respectively. We conclude that the silicate systems are not likely to be useful as replacements for SiO2, while aluminates are more promising. ©2003 American Institute of Physics.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/128451
- author
- Van Dover, R B ; Green, M L ; Manchanda, L ; Schneemeyer, L F and Siegrist, Theo LU
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 83
- issue
- 7
- pages
- 1459 - 1461
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:0042418690
- ISSN
- 0003-6951
- DOI
- 10.1063/1.1603341
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041)
- id
- 4ae53833-ea42-45b1-9046-f13914cede99 (old id 128451)
- date added to LUP
- 2016-04-01 11:44:32
- date last changed
- 2022-01-26 17:34:23
@article{4ae53833-ea42-45b1-9046-f13914cede99, abstract = {{We have investigated the crystallization of amorphous oxides that are considered likely candidates to replace amorphous SiO2 as the gate dielectric in advanced field-effect transistors. To avoid crystallization, the mole fraction of main-group oxide in the Zr–Si–O, Zr–Al–O, and Hf–Si–O systems must be greater than 83%, 65%, and 78%, respectively, leading to a maximum useful dielectric constant of only 6.9, 12.7, and 6.6, respectively. We conclude that the silicate systems are not likely to be useful as replacements for SiO2, while aluminates are more promising. ©2003 American Institute of Physics.}}, author = {{Van Dover, R B and Green, M L and Manchanda, L and Schneemeyer, L F and Siegrist, Theo}}, issn = {{0003-6951}}, language = {{eng}}, number = {{7}}, pages = {{1459--1461}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Composition-dependent crystallization of alternative gate dielectrics.}}, url = {{http://dx.doi.org/10.1063/1.1603341}}, doi = {{10.1063/1.1603341}}, volume = {{83}}, year = {{2003}}, }