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Fabrication of crossed junctions of semiconducting and metallic carbon nanotubes : A CNT-gated CNT-FET

Lee, Dong Su ; Svensson, Johannes LU ; Lee, Sang Wook LU ; Park, Yung Woo and Campbell, Eleanor E.B. (2006) In Journal of Nanoscience and Nanotechnology 6(5). p.1325-1330
Abstract

We have developed a method to fabricate crossed junctions between semiconducting (s) and metallic (m) carbon nanotubes (CNTs) combining electric field directed chemical vapor deposition growth and dielectrophoretic alignment. By separating the s- and m-CNTs with a thin dielectric an ultrasmall field effect transistor (FET) was fabricated. By using the m-CNT as a gate it was possible to modulate the source-drain current through the s-CNT FET channel. We have also used the m-CNT as an electrical lead. An off-state current lowering was observed when the m-CNT lead was used as a drain electrode.

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author
; ; ; and
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Carbon Nanotube, Device Fabrication, Field Effect Transistor
in
Journal of Nanoscience and Nanotechnology
volume
6
issue
5
pages
6 pages
publisher
American Scientific Publishers
external identifiers
  • pmid:16792360
  • scopus:33746421113
ISSN
1533-4880
DOI
10.1166/jnn.2006.321
language
English
LU publication?
no
id
4b1ce834-7b54-4082-9160-555c35a98724
date added to LUP
2020-05-05 12:20:00
date last changed
2024-10-03 02:09:35
@article{4b1ce834-7b54-4082-9160-555c35a98724,
  abstract     = {{<p>We have developed a method to fabricate crossed junctions between semiconducting (s) and metallic (m) carbon nanotubes (CNTs) combining electric field directed chemical vapor deposition growth and dielectrophoretic alignment. By separating the s- and m-CNTs with a thin dielectric an ultrasmall field effect transistor (FET) was fabricated. By using the m-CNT as a gate it was possible to modulate the source-drain current through the s-CNT FET channel. We have also used the m-CNT as an electrical lead. An off-state current lowering was observed when the m-CNT lead was used as a drain electrode.</p>}},
  author       = {{Lee, Dong Su and Svensson, Johannes and Lee, Sang Wook and Park, Yung Woo and Campbell, Eleanor E.B.}},
  issn         = {{1533-4880}},
  keywords     = {{Carbon Nanotube; Device Fabrication; Field Effect Transistor}},
  language     = {{eng}},
  month        = {{05}},
  number       = {{5}},
  pages        = {{1325--1330}},
  publisher    = {{American Scientific Publishers}},
  series       = {{Journal of Nanoscience and Nanotechnology}},
  title        = {{Fabrication of crossed junctions of semiconducting and metallic carbon nanotubes : A CNT-gated CNT-FET}},
  url          = {{http://dx.doi.org/10.1166/jnn.2006.321}},
  doi          = {{10.1166/jnn.2006.321}},
  volume       = {{6}},
  year         = {{2006}},
}