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Self-organized formation of unidirectional and quasi-one-dimensional metallic Tb silicide nanowires on Si(110)

Appelfeller, Stephan LU ; Franz, Martin ; Karadag, Murat ; Kubicki, Milan ; Zielinski, Robert ; Krivenkov, Maxim ; Varykhalov, Andrei ; Preobrajenski, Alexei LU and Dähne, Mario (2023) In Applied Surface Science 607.
Abstract

Terbium induced nanostructures on Si(110) and their growth are thoroughly characterized by low energy electron diffraction, scanning tunneling microscopy and spectroscopy, core-level and valence band photoelectron spectroscopy, and angle-resolved photoelectron spectroscopy. For low Tb coverage, a wetting layer forms with its surface fraction continuously decreasing with increasing Tb coverage in favor of the formation of unidirectional Tb silicide nanowires. These nanowires show high aspect ratios for high annealing temperatures or on substrates already containing Tb in the bulk. Both wetting layer and nanowires are stable for temperatures up to 750°C. In contrast to the nanowires, the wetting layer is characterized by a band gap. Thus,... (More)

Terbium induced nanostructures on Si(110) and their growth are thoroughly characterized by low energy electron diffraction, scanning tunneling microscopy and spectroscopy, core-level and valence band photoelectron spectroscopy, and angle-resolved photoelectron spectroscopy. For low Tb coverage, a wetting layer forms with its surface fraction continuously decreasing with increasing Tb coverage in favor of the formation of unidirectional Tb silicide nanowires. These nanowires show high aspect ratios for high annealing temperatures or on substrates already containing Tb in the bulk. Both wetting layer and nanowires are stable for temperatures up to 750°C. In contrast to the nanowires, the wetting layer is characterized by a band gap. Thus, the metallic nanowires, which show a quasi-one-dimensional electronic band structure, are embedded in a semiconducting surrounding of wetting layer and substrate, insulating the nanowires from each other.

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author
; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
ARPES, Electronic structure, Growth, LEED, Nanowires, PES, Silicides, STM, STS
in
Applied Surface Science
volume
607
article number
154875
publisher
Elsevier
external identifiers
  • scopus:85139038064
ISSN
0169-4332
DOI
10.1016/j.apsusc.2022.154875
language
English
LU publication?
yes
id
4c200a65-4eb3-48db-a82e-b60e8b4a1878
date added to LUP
2022-12-27 12:18:12
date last changed
2023-01-19 19:01:20
@article{4c200a65-4eb3-48db-a82e-b60e8b4a1878,
  abstract     = {{<p>Terbium induced nanostructures on Si(110) and their growth are thoroughly characterized by low energy electron diffraction, scanning tunneling microscopy and spectroscopy, core-level and valence band photoelectron spectroscopy, and angle-resolved photoelectron spectroscopy. For low Tb coverage, a wetting layer forms with its surface fraction continuously decreasing with increasing Tb coverage in favor of the formation of unidirectional Tb silicide nanowires. These nanowires show high aspect ratios for high annealing temperatures or on substrates already containing Tb in the bulk. Both wetting layer and nanowires are stable for temperatures up to 750°C. In contrast to the nanowires, the wetting layer is characterized by a band gap. Thus, the metallic nanowires, which show a quasi-one-dimensional electronic band structure, are embedded in a semiconducting surrounding of wetting layer and substrate, insulating the nanowires from each other.</p>}},
  author       = {{Appelfeller, Stephan and Franz, Martin and Karadag, Murat and Kubicki, Milan and Zielinski, Robert and Krivenkov, Maxim and Varykhalov, Andrei and Preobrajenski, Alexei and Dähne, Mario}},
  issn         = {{0169-4332}},
  keywords     = {{ARPES; Electronic structure; Growth; LEED; Nanowires; PES; Silicides; STM; STS}},
  language     = {{eng}},
  month        = {{01}},
  publisher    = {{Elsevier}},
  series       = {{Applied Surface Science}},
  title        = {{Self-organized formation of unidirectional and quasi-one-dimensional metallic Tb silicide nanowires on Si(110)}},
  url          = {{http://dx.doi.org/10.1016/j.apsusc.2022.154875}},
  doi          = {{10.1016/j.apsusc.2022.154875}},
  volume       = {{607}},
  year         = {{2023}},
}