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Broadband LDMOS 40 W and 55 W integrated power amplifiers

Bagger, Reza LU and Sjoland, Henrik LU (2017) 2017 IEEE MTT-S International Microwave Symposium, IMS 2017 In 2017 IEEE MTT-S International Microwave Symposium, IMS 2017 p.1950-1952
Abstract

The performance of broadband microwave 40 W and 55 W LDMOS integrated power amplifiers is reported. A 30 V LDMOS process with 500 nm gate length was used for the design. Single and dual die packages were evaluated. A dual die package provides flexibility in output power and efficiency depending on combiner topology at the input and output of the circuit. Different saturated power and efficiency are obtained for different classes, Class A, AB and B operation and for different combiners, Wilkinson, quadrature or balun. Moreover, dual die in Doherty configuration provides a compact solution for better back-off efficiency in a symmetrical / asymmetrical topology. The 40 W design demonstrates 24 %, 1 dB fractional bandwidth around 2.1 GHz,... (More)

The performance of broadband microwave 40 W and 55 W LDMOS integrated power amplifiers is reported. A 30 V LDMOS process with 500 nm gate length was used for the design. Single and dual die packages were evaluated. A dual die package provides flexibility in output power and efficiency depending on combiner topology at the input and output of the circuit. Different saturated power and efficiency are obtained for different classes, Class A, AB and B operation and for different combiners, Wilkinson, quadrature or balun. Moreover, dual die in Doherty configuration provides a compact solution for better back-off efficiency in a symmetrical / asymmetrical topology. The 40 W design demonstrates 24 %, 1 dB fractional bandwidth around 2.1 GHz, and power added efficiency of 48 % at P-1 dB of 50 W. It showed excellent back-off linearity and best in class memory effect over frequency and temperature. The 55 W design has 28 %, 1 dB fractional bandwidth around 2.2 GHz, and power added efficiency of 49 % at P-1 dB equal to 63 W.

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Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
3G and 4G radio base station, CDMA, Dual die, Integrated power amplifier, IS95, LDMOS, LTE, TD-CDMA, W-CDMA
in
2017 IEEE MTT-S International Microwave Symposium, IMS 2017
pages
3 pages
publisher
Institute of Electrical and Electronics Engineers Inc.
conference name
2017 IEEE MTT-S International Microwave Symposium, IMS 2017
external identifiers
  • scopus:85032486580
ISBN
9781509063604
DOI
10.1109/MWSYM.2017.8059043
language
English
LU publication?
yes
id
4cc8c08e-3dea-4330-9aab-bc985f01ccea
date added to LUP
2017-11-07 14:05:42
date last changed
2018-01-07 12:25:09
@inproceedings{4cc8c08e-3dea-4330-9aab-bc985f01ccea,
  abstract     = {<p>The performance of broadband microwave 40 W and 55 W LDMOS integrated power amplifiers is reported. A 30 V LDMOS process with 500 nm gate length was used for the design. Single and dual die packages were evaluated. A dual die package provides flexibility in output power and efficiency depending on combiner topology at the input and output of the circuit. Different saturated power and efficiency are obtained for different classes, Class A, AB and B operation and for different combiners, Wilkinson, quadrature or balun. Moreover, dual die in Doherty configuration provides a compact solution for better back-off efficiency in a symmetrical / asymmetrical topology. The 40 W design demonstrates 24 %, 1 dB fractional bandwidth around 2.1 GHz, and power added efficiency of 48 % at P-1 dB of 50 W. It showed excellent back-off linearity and best in class memory effect over frequency and temperature. The 55 W design has 28 %, 1 dB fractional bandwidth around 2.2 GHz, and power added efficiency of 49 % at P-1 dB equal to 63 W.</p>},
  author       = {Bagger, Reza and Sjoland, Henrik},
  booktitle    = {2017 IEEE MTT-S International Microwave Symposium, IMS 2017},
  isbn         = {9781509063604},
  keyword      = {3G and 4G radio base station,CDMA,Dual die,Integrated power amplifier,IS95,LDMOS,LTE,TD-CDMA,W-CDMA},
  language     = {eng},
  month        = {10},
  pages        = {1950--1952},
  publisher    = {Institute of Electrical and Electronics Engineers Inc.},
  title        = {Broadband LDMOS 40 W and 55 W integrated power amplifiers},
  url          = {http://dx.doi.org/10.1109/MWSYM.2017.8059043},
  year         = {2017},
}