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Synthesis of Mn-doped indium antimonide nanowires by multi-step depositions and annealing

Zhang, Qiujun; Cao, Yuanhuan; Li, Kan; Pan, Huayong; Huang, Shaoyun; Xing, Yingjie and Xu, H. Q. LU (2017) In Journal of Physics and Chemistry of Solids 110. p.43-48
Abstract

A novel approach to the synthesis of Mn-doped InSb nanowires is demonstrated in this work. We first report on the preparation of InSb nanowires without high temperature treatment. Indium nanowires are grown by glance angle deposition and then coated with a layer of Sb. Single crystalline InSb nanowires are obtained by annealing In/Sb nanostructures at 200 °C. Triple-layer In/Mn/Sb nanostructures are formed by the similar three-step depositions. Mn-doped InSb nanowires are prepared by annealing In/Mn/Sb nanostructures. Transmission electron microscopy and energy-dispersive X-ray spectroscopy are used to analyze the structure and elemental distribution of the nanostructures. Our result shows that Mn-doped InSb nanowires can be achieved by... (More)

A novel approach to the synthesis of Mn-doped InSb nanowires is demonstrated in this work. We first report on the preparation of InSb nanowires without high temperature treatment. Indium nanowires are grown by glance angle deposition and then coated with a layer of Sb. Single crystalline InSb nanowires are obtained by annealing In/Sb nanostructures at 200 °C. Triple-layer In/Mn/Sb nanostructures are formed by the similar three-step depositions. Mn-doped InSb nanowires are prepared by annealing In/Mn/Sb nanostructures. Transmission electron microscopy and energy-dispersive X-ray spectroscopy are used to analyze the structure and elemental distribution of the nanostructures. Our result shows that Mn-doped InSb nanowires can be achieved by employing solid reaction at low annealing temperature.

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organization
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Contribution to journal
publication status
published
subject
keywords
Impurities in semiconductors, Nanostructured materials, Semiconductors, Solid state reactions
in
Journal of Physics and Chemistry of Solids
volume
110
pages
6 pages
external identifiers
  • scopus:85019974830
ISSN
0022-3697
DOI
10.1016/j.jpcs.2017.05.031
language
English
LU publication?
yes
id
4e49ca8b-f107-42b2-b66d-dee7fa173d1c
date added to LUP
2017-06-26 10:58:33
date last changed
2017-06-26 10:58:33
@article{4e49ca8b-f107-42b2-b66d-dee7fa173d1c,
  abstract     = {<p>A novel approach to the synthesis of Mn-doped InSb nanowires is demonstrated in this work. We first report on the preparation of InSb nanowires without high temperature treatment. Indium nanowires are grown by glance angle deposition and then coated with a layer of Sb. Single crystalline InSb nanowires are obtained by annealing In/Sb nanostructures at 200 °C. Triple-layer In/Mn/Sb nanostructures are formed by the similar three-step depositions. Mn-doped InSb nanowires are prepared by annealing In/Mn/Sb nanostructures. Transmission electron microscopy and energy-dispersive X-ray spectroscopy are used to analyze the structure and elemental distribution of the nanostructures. Our result shows that Mn-doped InSb nanowires can be achieved by employing solid reaction at low annealing temperature.</p>},
  author       = {Zhang, Qiujun and Cao, Yuanhuan and Li, Kan and Pan, Huayong and Huang, Shaoyun and Xing, Yingjie and Xu, H. Q.},
  issn         = {0022-3697},
  keyword      = {Impurities in semiconductors,Nanostructured materials,Semiconductors,Solid state reactions},
  language     = {eng},
  month        = {11},
  pages        = {43--48},
  series       = {Journal of Physics and Chemistry of Solids},
  title        = {Synthesis of Mn-doped indium antimonide nanowires by multi-step depositions and annealing},
  url          = {http://dx.doi.org/10.1016/j.jpcs.2017.05.031},
  volume       = {110},
  year         = {2017},
}