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Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

Tuominen, M.; Lang, J.; Dahl, J.; Kuzmin, M.; Yasir, M.; Makela, J.; Osiecki, Jacek LU ; Schulte, Karina LU ; Punkkinen, M. P. J. and Laukkanen, P., et al. (2015) In Applied Physics Letters 106(1).
Abstract
The pre-oxidized crystalline (3 x 1)-O structure of InAs(100) has been recently found to significantly improve insulator/InAs junctions for devices, but the atomic structure and formation of this useful oxide layer are not well understood. We report high-resolution photoelectron spectroscopy analysis of (3 x 1)-O on InAs(100) and InSb(100). The findings reveal that the atomic structure of (3 x 1)-O consists of In atoms with unexpected negative (between -0.64 and -0.47 eV) and only moderate positive (In2O type) core-level shifts; highly oxidized group-V sites; and four different oxygen sites. These fingerprint shifts are compared to those of previously studied oxides of III-V to elucidate oxidation processes. (C) 2015 AIP Publishing LLC.
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Applied Physics Letters
volume
106
issue
1
publisher
American Institute of Physics
external identifiers
  • wos:000347976900012
  • scopus:84923767571
ISSN
0003-6951
DOI
10.1063/1.4905655
language
English
LU publication?
yes
id
aed19b65-6d09-48b4-82a9-77edfc16c933 (old id 5053406)
date added to LUP
2015-02-24 10:18:03
date last changed
2017-04-09 03:05:53
@article{aed19b65-6d09-48b4-82a9-77edfc16c933,
  abstract     = {The pre-oxidized crystalline (3 x 1)-O structure of InAs(100) has been recently found to significantly improve insulator/InAs junctions for devices, but the atomic structure and formation of this useful oxide layer are not well understood. We report high-resolution photoelectron spectroscopy analysis of (3 x 1)-O on InAs(100) and InSb(100). The findings reveal that the atomic structure of (3 x 1)-O consists of In atoms with unexpected negative (between -0.64 and -0.47 eV) and only moderate positive (In2O type) core-level shifts; highly oxidized group-V sites; and four different oxygen sites. These fingerprint shifts are compared to those of previously studied oxides of III-V to elucidate oxidation processes. (C) 2015 AIP Publishing LLC.},
  articleno    = {011606},
  author       = {Tuominen, M. and Lang, J. and Dahl, J. and Kuzmin, M. and Yasir, M. and Makela, J. and Osiecki, Jacek and Schulte, Karina and Punkkinen, M. P. J. and Laukkanen, P. and Kokko, K.},
  issn         = {0003-6951},
  language     = {eng},
  number       = {1},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy},
  url          = {http://dx.doi.org/10.1063/1.4905655},
  volume       = {106},
  year         = {2015},
}