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Thermoelectric performance of classical topological insulator nanowires

Gooth, Johannes; Gluschke, Jan-Göran LU ; Zierold, Robert; Leijnse, Martin LU ; Linke, Heiner LU and Nielsch, Kornelius (2015) In Semiconductor Science and Technology 30(1).
Abstract
There is currently substantial effort being invested into creating efficient thermoelectric (TE) nanowires based on topological insulator (TI) chalcogenide-type materials. A key premise of these efforts is the assumption that the generally good TE properties that these materials exhibit in bulk form will translate into similarly good or even better TE performance of the same materials in nanowire form. Here, we calculate TE performance of TI nanowires based on Bi2Te3, Sb2Te3 and Bi2Se3 as a function of diameter and Fermi level. We show that the TE performance of TI nanowires does not derive from the properties of the bulk material in a straightforward way. For all investigated systems the competition between surface states and bulk channel... (More)
There is currently substantial effort being invested into creating efficient thermoelectric (TE) nanowires based on topological insulator (TI) chalcogenide-type materials. A key premise of these efforts is the assumption that the generally good TE properties that these materials exhibit in bulk form will translate into similarly good or even better TE performance of the same materials in nanowire form. Here, we calculate TE performance of TI nanowires based on Bi2Te3, Sb2Te3 and Bi2Se3 as a function of diameter and Fermi level. We show that the TE performance of TI nanowires does not derive from the properties of the bulk material in a straightforward way. For all investigated systems the competition between surface states and bulk channel causes a significant modification of the TE transport coefficients if the diameter is reduced into the sub 10 mu m range. Key aspects are that the surface and bulk states are optimized at different Fermi levels or have different polarity as well as the high surface to volume ratio of the nanowires. This limits the maximum TE performance of TI nanowires and thus their application in efficient TE devices. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
semiconductor nanowires, thermoelectric nanostructures, classical, topological insulator, Bi2Te3, layered materials
in
Semiconductor Science and Technology
volume
30
issue
1
publisher
IOP Publishing
external identifiers
  • wos:000347033300016
  • scopus:84920194899
ISSN
0268-1242
DOI
10.1088/0268-1242/30/1/015015
language
English
LU publication?
yes
id
d357b5ce-953f-4412-95b1-f33d45c0969d (old id 5085270)
date added to LUP
2015-02-26 12:51:26
date last changed
2017-08-27 04:44:16
@article{d357b5ce-953f-4412-95b1-f33d45c0969d,
  abstract     = {There is currently substantial effort being invested into creating efficient thermoelectric (TE) nanowires based on topological insulator (TI) chalcogenide-type materials. A key premise of these efforts is the assumption that the generally good TE properties that these materials exhibit in bulk form will translate into similarly good or even better TE performance of the same materials in nanowire form. Here, we calculate TE performance of TI nanowires based on Bi2Te3, Sb2Te3 and Bi2Se3 as a function of diameter and Fermi level. We show that the TE performance of TI nanowires does not derive from the properties of the bulk material in a straightforward way. For all investigated systems the competition between surface states and bulk channel causes a significant modification of the TE transport coefficients if the diameter is reduced into the sub 10 mu m range. Key aspects are that the surface and bulk states are optimized at different Fermi levels or have different polarity as well as the high surface to volume ratio of the nanowires. This limits the maximum TE performance of TI nanowires and thus their application in efficient TE devices.},
  articleno    = {015015},
  author       = {Gooth, Johannes and Gluschke, Jan-Göran and Zierold, Robert and Leijnse, Martin and Linke, Heiner and Nielsch, Kornelius},
  issn         = {0268-1242},
  keyword      = {semiconductor nanowires,thermoelectric nanostructures,classical,topological insulator,Bi2Te3,layered materials},
  language     = {eng},
  number       = {1},
  publisher    = {IOP Publishing},
  series       = {Semiconductor Science and Technology},
  title        = {Thermoelectric performance of classical topological insulator nanowires},
  url          = {http://dx.doi.org/10.1088/0268-1242/30/1/015015},
  volume       = {30},
  year         = {2015},
}