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Line shape and composition of the In 3d(5/2) core-level photoemission for the interface analysis of In-containing III-V semiconductors

Makela, J.; Tuominen, M.; Kuzmin, M.; Yasir, M.; Lang, J.; Punkkinen, M. P. J.; Laukkanen, P.; Kokko, K.; Schulte, Karina LU and Osiecki, Jacek LU , et al. (2015) In Applied Surface Science 329. p.371-375
Abstract
The In 3d(5/2) photoelectron spectroscopy peak has been widely used to determine the interface structures of In-containing III-V device materials (e.g., oxidation states). However, an unclear parameter affecting the determination of the energy shifts and number of the core-level components, and therefore, the interpreted interface structure and composition, is still the intrinsic In 3d(5/2) peak line shape. It is undecided whether the line shape is naturally symmetric or asymmetric for pure In-containing III-V compounds. By using high-resolution photoelectron spectroscopy, we show that the In 3d(5/2) asymmetry arising from the emission at high binding-energy tail is not an intrinsic property of InAs, InP, InSb and InGaAs. Furthermore, it... (More)
The In 3d(5/2) photoelectron spectroscopy peak has been widely used to determine the interface structures of In-containing III-V device materials (e.g., oxidation states). However, an unclear parameter affecting the determination of the energy shifts and number of the core-level components, and therefore, the interpreted interface structure and composition, is still the intrinsic In 3d(5/2) peak line shape. It is undecided whether the line shape is naturally symmetric or asymmetric for pure In-containing III-V compounds. By using high-resolution photoelectron spectroscopy, we show that the In 3d(5/2) asymmetry arising from the emission at high binding-energy tail is not an intrinsic property of InAs, InP, InSb and InGaAs. Furthermore, it is shown that asymmetry of In 3d(5/2) peaks of pure III-V's originates from the natural surface reconstructions which cause the coexistence of slightly shifted In 3d(5/2) components with the symmetric peak shape and dominant Lorentzian broadening. (C) 2015 Elsevier B.V. All rights reserved. (Less)
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Contribution to journal
publication status
published
subject
keywords
Line shape, III-V semiconductor, Photoelectron spectroscopy, Interfacial, analysis
in
Applied Surface Science
volume
329
pages
371 - 375
publisher
Elsevier
external identifiers
  • wos:000349616500048
  • scopus:84922837299
ISSN
1873-5584
DOI
10.1016/j.apsusc.2014.12.155
language
English
LU publication?
yes
id
61eb48c6-c30a-40d9-89be-5a137dd32d07 (old id 5160127)
date added to LUP
2015-03-25 08:53:49
date last changed
2017-04-09 03:10:00
@article{61eb48c6-c30a-40d9-89be-5a137dd32d07,
  abstract     = {The In 3d(5/2) photoelectron spectroscopy peak has been widely used to determine the interface structures of In-containing III-V device materials (e.g., oxidation states). However, an unclear parameter affecting the determination of the energy shifts and number of the core-level components, and therefore, the interpreted interface structure and composition, is still the intrinsic In 3d(5/2) peak line shape. It is undecided whether the line shape is naturally symmetric or asymmetric for pure In-containing III-V compounds. By using high-resolution photoelectron spectroscopy, we show that the In 3d(5/2) asymmetry arising from the emission at high binding-energy tail is not an intrinsic property of InAs, InP, InSb and InGaAs. Furthermore, it is shown that asymmetry of In 3d(5/2) peaks of pure III-V's originates from the natural surface reconstructions which cause the coexistence of slightly shifted In 3d(5/2) components with the symmetric peak shape and dominant Lorentzian broadening. (C) 2015 Elsevier B.V. All rights reserved.},
  author       = {Makela, J. and Tuominen, M. and Kuzmin, M. and Yasir, M. and Lang, J. and Punkkinen, M. P. J. and Laukkanen, P. and Kokko, K. and Schulte, Karina and Osiecki, Jacek and Wallace, R. M.},
  issn         = {1873-5584},
  keyword      = {Line shape,III-V semiconductor,Photoelectron spectroscopy,Interfacial,analysis},
  language     = {eng},
  pages        = {371--375},
  publisher    = {Elsevier},
  series       = {Applied Surface Science},
  title        = {Line shape and composition of the In 3d(5/2) core-level photoemission for the interface analysis of In-containing III-V semiconductors},
  url          = {http://dx.doi.org/10.1016/j.apsusc.2014.12.155},
  volume       = {329},
  year         = {2015},
}