Line shape and composition of the In 3d(5/2) core-level photoemission for the interface analysis of In-containing III-V semiconductors
(2015) In Applied Surface Science 329. p.371-375- Abstract
- The In 3d(5/2) photoelectron spectroscopy peak has been widely used to determine the interface structures of In-containing III-V device materials (e.g., oxidation states). However, an unclear parameter affecting the determination of the energy shifts and number of the core-level components, and therefore, the interpreted interface structure and composition, is still the intrinsic In 3d(5/2) peak line shape. It is undecided whether the line shape is naturally symmetric or asymmetric for pure In-containing III-V compounds. By using high-resolution photoelectron spectroscopy, we show that the In 3d(5/2) asymmetry arising from the emission at high binding-energy tail is not an intrinsic property of InAs, InP, InSb and InGaAs. Furthermore, it... (More)
- The In 3d(5/2) photoelectron spectroscopy peak has been widely used to determine the interface structures of In-containing III-V device materials (e.g., oxidation states). However, an unclear parameter affecting the determination of the energy shifts and number of the core-level components, and therefore, the interpreted interface structure and composition, is still the intrinsic In 3d(5/2) peak line shape. It is undecided whether the line shape is naturally symmetric or asymmetric for pure In-containing III-V compounds. By using high-resolution photoelectron spectroscopy, we show that the In 3d(5/2) asymmetry arising from the emission at high binding-energy tail is not an intrinsic property of InAs, InP, InSb and InGaAs. Furthermore, it is shown that asymmetry of In 3d(5/2) peaks of pure III-V's originates from the natural surface reconstructions which cause the coexistence of slightly shifted In 3d(5/2) components with the symmetric peak shape and dominant Lorentzian broadening. (C) 2015 Elsevier B.V. All rights reserved. (Less)
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https://lup.lub.lu.se/record/5160127
- author
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Line shape, III-V semiconductor, Photoelectron spectroscopy, Interfacial, analysis
- in
- Applied Surface Science
- volume
- 329
- pages
- 371 - 375
- publisher
- Elsevier
- external identifiers
-
- wos:000349616500048
- scopus:84922837299
- ISSN
- 1873-5584
- DOI
- 10.1016/j.apsusc.2014.12.155
- language
- English
- LU publication?
- yes
- id
- 61eb48c6-c30a-40d9-89be-5a137dd32d07 (old id 5160127)
- date added to LUP
- 2016-04-01 10:19:27
- date last changed
- 2022-01-25 22:07:25
@article{61eb48c6-c30a-40d9-89be-5a137dd32d07, abstract = {{The In 3d(5/2) photoelectron spectroscopy peak has been widely used to determine the interface structures of In-containing III-V device materials (e.g., oxidation states). However, an unclear parameter affecting the determination of the energy shifts and number of the core-level components, and therefore, the interpreted interface structure and composition, is still the intrinsic In 3d(5/2) peak line shape. It is undecided whether the line shape is naturally symmetric or asymmetric for pure In-containing III-V compounds. By using high-resolution photoelectron spectroscopy, we show that the In 3d(5/2) asymmetry arising from the emission at high binding-energy tail is not an intrinsic property of InAs, InP, InSb and InGaAs. Furthermore, it is shown that asymmetry of In 3d(5/2) peaks of pure III-V's originates from the natural surface reconstructions which cause the coexistence of slightly shifted In 3d(5/2) components with the symmetric peak shape and dominant Lorentzian broadening. (C) 2015 Elsevier B.V. All rights reserved.}}, author = {{Makela, J. and Tuominen, M. and Kuzmin, M. and Yasir, M. and Lang, J. and Punkkinen, M. P. J. and Laukkanen, P. and Kokko, K. and Schulte, Karina and Osiecki, Jacek and Wallace, R. M.}}, issn = {{1873-5584}}, keywords = {{Line shape; III-V semiconductor; Photoelectron spectroscopy; Interfacial; analysis}}, language = {{eng}}, pages = {{371--375}}, publisher = {{Elsevier}}, series = {{Applied Surface Science}}, title = {{Line shape and composition of the In 3d(5/2) core-level photoemission for the interface analysis of In-containing III-V semiconductors}}, url = {{http://dx.doi.org/10.1016/j.apsusc.2014.12.155}}, doi = {{10.1016/j.apsusc.2014.12.155}}, volume = {{329}}, year = {{2015}}, }