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Characterisation of the first wafer-scale prototype for the ALICE ITS3 upgrade: The monolithic stitched sensor (MOSS)

Abdelrahman, O. ; Gumprecht, J.K. ; Panasenko, I. LU ; Paniskaki, S. ; Silvermyr, D. LU orcid ; Staa, J. LU and Zingaretti, A. (2026) In Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 1086.
Abstract
This paper presents the characterisation and testing of the first wafer-scale monolithic stitched sensor (MOSS) prototype developed for the ALICE ITS3 upgrade that is to be installed during the LHC Long Shutdown 3 (2026–2030). The MOSS chip design is driven by the truly cylindrical detector geometry that imposes that each layer is built out of two wafer-sized, bent silicon chips. The stitching technique is employed to fabricate sensors with dimensions of 1.4 cm × 25.9 cm, thinned to 50 μm. The chip architecture, the in-pixel front-end, the laboratory and in-beam characterisation, the susceptibility to single-event effects, and the series testing are discussed. The testing campaign validates the design of a wafer-scale stitched sensor and... (More)
This paper presents the characterisation and testing of the first wafer-scale monolithic stitched sensor (MOSS) prototype developed for the ALICE ITS3 upgrade that is to be installed during the LHC Long Shutdown 3 (2026–2030). The MOSS chip design is driven by the truly cylindrical detector geometry that imposes that each layer is built out of two wafer-sized, bent silicon chips. The stitching technique is employed to fabricate sensors with dimensions of 1.4 cm × 25.9 cm, thinned to 50 μm. The chip architecture, the in-pixel front-end, the laboratory and in-beam characterisation, the susceptibility to single-event effects, and the series testing are discussed. The testing campaign validates the design of a wafer-scale stitched sensor and the performance of the pixel matrix to be within the ITS3 requirements. The MOSS chip demonstrates the feasibility of the ITS3 detector concept and provides insights for further optimisation and development. © 2026 The Authors (Less)
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keywords
CMOS stitching, Monolithic active pixel sensors, Silicon sensors, Solid state detectors, Fabrication, Integrated circuit design, Pixels, Silicon detectors, Solid-state sensors, WSI circuits, Characterization and testing, Chip design, Cylindrical detectors, Detector geometry, Monolithics, Sensor chips, Wafer scale, Silicon wafers
in
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
volume
1086
article number
171297
publisher
Elsevier
external identifiers
  • scopus:105028898645
ISSN
0168-9002
DOI
10.1016/j.nima.2026.171297
language
English
LU publication?
yes
id
5235586a-baaa-465a-94f0-eff3a0992796
date added to LUP
2026-04-07 09:35:20
date last changed
2026-04-07 09:36:23
@article{5235586a-baaa-465a-94f0-eff3a0992796,
  abstract     = {{This paper presents the characterisation and testing of the first wafer-scale monolithic stitched sensor (MOSS) prototype developed for the ALICE ITS3 upgrade that is to be installed during the LHC Long Shutdown 3 (2026–2030). The MOSS chip design is driven by the truly cylindrical detector geometry that imposes that each layer is built out of two wafer-sized, bent silicon chips. The stitching technique is employed to fabricate sensors with dimensions of 1.4 cm × 25.9 cm, thinned to 50 μm. The chip architecture, the in-pixel front-end, the laboratory and in-beam characterisation, the susceptibility to single-event effects, and the series testing are discussed. The testing campaign validates the design of a wafer-scale stitched sensor and the performance of the pixel matrix to be within the ITS3 requirements. The MOSS chip demonstrates the feasibility of the ITS3 detector concept and provides insights for further optimisation and development. © 2026 The Authors}},
  author       = {{Abdelrahman, O. and Gumprecht, J.K. and Panasenko, I. and Paniskaki, S. and Silvermyr, D. and Staa, J. and Zingaretti, A.}},
  issn         = {{0168-9002}},
  keywords     = {{CMOS stitching; Monolithic active pixel sensors; Silicon sensors; Solid state detectors; Fabrication; Integrated circuit design; Pixels; Silicon detectors; Solid-state sensors; WSI circuits; Characterization and testing; Chip design; Cylindrical detectors; Detector geometry; Monolithics; Sensor chips; Wafer scale; Silicon wafers}},
  language     = {{eng}},
  publisher    = {{Elsevier}},
  series       = {{Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment}},
  title        = {{Characterisation of the first wafer-scale prototype for the ALICE ITS3 upgrade: The monolithic stitched sensor (MOSS)}},
  url          = {{http://dx.doi.org/10.1016/j.nima.2026.171297}},
  doi          = {{10.1016/j.nima.2026.171297}},
  volume       = {{1086}},
  year         = {{2026}},
}