Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
(2018) In Nanotechnology 30(6).- Abstract
We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet-etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate,... (More)
We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet-etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300, 200, and 150 nm gate length. Our method enables us to achieve subthreshold swings as low as 38 mV dec-1 at 77 K for a 150 nm gate length.
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- author
- Gluschke, J. G. LU ; Seidl, J. ; Burke, A. M. LU ; Lyttleton, R. W. LU ; Carrad, D. J. ; Ullah, A. R. ; Fahlvik, S. LU ; Lehmann, S. LU ; Linke, H. LU and Micolich, A. P.
- organization
- publishing date
- 2018
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- field-effect transistor, GAA, gate-all-around, nanowire, nanowire alignment
- in
- Nanotechnology
- volume
- 30
- issue
- 6
- article number
- 064001
- publisher
- IOP Publishing
- external identifiers
-
- scopus:85058440064
- pmid:30523834
- ISSN
- 0957-4484
- DOI
- 10.1088/1361-6528/aaf1e5
- language
- English
- LU publication?
- yes
- id
- 53cca3d7-d0a6-4bf7-8e05-a2e489d754dc
- date added to LUP
- 2019-01-02 12:28:22
- date last changed
- 2024-08-06 06:08:30
@article{53cca3d7-d0a6-4bf7-8e05-a2e489d754dc, abstract = {{<p>We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet-etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300, 200, and 150 nm gate length. Our method enables us to achieve subthreshold swings as low as 38 mV dec<sup>-1</sup> at 77 K for a 150 nm gate length.</p>}}, author = {{Gluschke, J. G. and Seidl, J. and Burke, A. M. and Lyttleton, R. W. and Carrad, D. J. and Ullah, A. R. and Fahlvik, S. and Lehmann, S. and Linke, H. and Micolich, A. P.}}, issn = {{0957-4484}}, keywords = {{field-effect transistor; GAA; gate-all-around; nanowire; nanowire alignment}}, language = {{eng}}, number = {{6}}, publisher = {{IOP Publishing}}, series = {{Nanotechnology}}, title = {{Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors}}, url = {{http://dx.doi.org/10.1088/1361-6528/aaf1e5}}, doi = {{10.1088/1361-6528/aaf1e5}}, volume = {{30}}, year = {{2018}}, }