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Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

Gluschke, J. G. LU ; Seidl, J. ; Burke, A. M. LU orcid ; Lyttleton, R. W. LU ; Carrad, D. J. ; Ullah, A. R. ; Fahlvik, S. LU ; Lehmann, S. LU ; Linke, H. LU orcid and Micolich, A. P. (2018) In Nanotechnology 30(6).
Abstract

We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet-etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate,... (More)

We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet-etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300, 200, and 150 nm gate length. Our method enables us to achieve subthreshold swings as low as 38 mV dec-1 at 77 K for a 150 nm gate length.

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author
; ; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
field-effect transistor, GAA, gate-all-around, nanowire, nanowire alignment
in
Nanotechnology
volume
30
issue
6
article number
064001
publisher
IOP Publishing
external identifiers
  • scopus:85058440064
  • pmid:30523834
ISSN
0957-4484
DOI
10.1088/1361-6528/aaf1e5
language
English
LU publication?
yes
id
53cca3d7-d0a6-4bf7-8e05-a2e489d754dc
date added to LUP
2019-01-02 12:28:22
date last changed
2024-05-28 00:12:27
@article{53cca3d7-d0a6-4bf7-8e05-a2e489d754dc,
  abstract     = {{<p>We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet-etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300, 200, and 150 nm gate length. Our method enables us to achieve subthreshold swings as low as 38 mV dec<sup>-1</sup> at 77 K for a 150 nm gate length.</p>}},
  author       = {{Gluschke, J. G. and Seidl, J. and Burke, A. M. and Lyttleton, R. W. and Carrad, D. J. and Ullah, A. R. and Fahlvik, S. and Lehmann, S. and Linke, H. and Micolich, A. P.}},
  issn         = {{0957-4484}},
  keywords     = {{field-effect transistor; GAA; gate-all-around; nanowire; nanowire alignment}},
  language     = {{eng}},
  number       = {{6}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors}},
  url          = {{http://dx.doi.org/10.1088/1361-6528/aaf1e5}},
  doi          = {{10.1088/1361-6528/aaf1e5}},
  volume       = {{30}},
  year         = {{2018}},
}