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Optically detected extended X-ray absorption fine structure study of InGaN/GaN single quantum wells

Rigopoulos, N.; Hamilton, B.; Davies, G. J.; Towlson, B. M.; Poolton, N. R J; Dawson, P.; Graham, D. M.; Kappers, M. J.; Humphreys, C. J. and Carlson, S. LU (2007) 28th International Conference on the Physics of Semiconductors, ICPS 2006 In AIP Conference Proceedings 893. p.1503-1504
Abstract

We have investigated the local atomic environment of the Ga atoms in an InxGa1-xN single quantum well structure using Optically Detected Extended X-ray Absorption Fine Structure (OD-EXAFS). A comparison of the OD-EXAFS data with a theoretical model shows the technique to be site selective for this particular structure and reveals that the quantum well emission originates from regions with x=0.15. © 2007 American Institute of Physics.

Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
keywords
EXAFS, InGaN, Quantum well
in
AIP Conference Proceedings
volume
893
pages
2 pages
conference name
28th International Conference on the Physics of Semiconductors, ICPS 2006
external identifiers
  • Scopus:77958508505
ISBN
9780735403970
DOI
10.1063/1.2730478
language
English
LU publication?
yes
id
53d33ccf-1a98-4209-89d1-114d8cef0c12
date added to LUP
2016-05-04 13:30:28
date last changed
2017-01-01 08:24:52
@inproceedings{53d33ccf-1a98-4209-89d1-114d8cef0c12,
  abstract     = {<p>We have investigated the local atomic environment of the Ga atoms in an In<sub>x</sub>Ga<sub>1-x</sub>N single quantum well structure using Optically Detected Extended X-ray Absorption Fine Structure (OD-EXAFS). A comparison of the OD-EXAFS data with a theoretical model shows the technique to be site selective for this particular structure and reveals that the quantum well emission originates from regions with x=0.15. © 2007 American Institute of Physics.</p>},
  author       = {Rigopoulos, N. and Hamilton, B. and Davies, G. J. and Towlson, B. M. and Poolton, N. R J and Dawson, P. and Graham, D. M. and Kappers, M. J. and Humphreys, C. J. and Carlson, S.},
  booktitle    = {AIP Conference Proceedings},
  isbn         = {9780735403970},
  keyword      = {EXAFS,InGaN,Quantum well},
  language     = {eng},
  pages        = {1503--1504},
  title        = {Optically detected extended X-ray absorption fine structure study of InGaN/GaN single quantum wells},
  url          = {http://dx.doi.org/10.1063/1.2730478},
  volume       = {893},
  year         = {2007},
}