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Quasi One-Dimensional Metal-Semiconductor Heterostructures

Benter, S. LU ; Dubrovskii, V. G.; Bartmann, M.; Campo, A.; Zardo, I.; Sistani, M.; Stöger-Pollach, M.; Lancaster, S.; Detz, H. and Lugstein, A. (2019) In Nano Letters 19(6). p.3892-3897
Abstract

The band offsets occurring at the abrupt heterointerfaces of suitable material combinations offer a powerful design tool for high performance or even new kinds of devices. Because of a large variety of applications for metal-semiconductor heterostructures and the promise of low-dimensional systems to present exceptional device characteristics, nanowire heterostructures gained particular interest over the past decade. However, compared to those achieved by mature two-dimensional processing techniques, quasi one-dimensional (1D) heterostructures often suffer from low interface and crystalline quality. For the GaAs-Au system, we demonstrate exemplarily a new approach to generate epitaxial and single crystalline metal-semiconductor nanowire... (More)

The band offsets occurring at the abrupt heterointerfaces of suitable material combinations offer a powerful design tool for high performance or even new kinds of devices. Because of a large variety of applications for metal-semiconductor heterostructures and the promise of low-dimensional systems to present exceptional device characteristics, nanowire heterostructures gained particular interest over the past decade. However, compared to those achieved by mature two-dimensional processing techniques, quasi one-dimensional (1D) heterostructures often suffer from low interface and crystalline quality. For the GaAs-Au system, we demonstrate exemplarily a new approach to generate epitaxial and single crystalline metal-semiconductor nanowire heterostructures with atomically sharp interfaces using standard semiconductor processing techniques. Spatially resolved Raman measurements exclude any significant strain at the lattice mismatched metal-semiconductor heterojunction. On the basis of experimental results and simulation work, a novel self-assembled mechanism is demonstrated which yields one-step reconfiguration of a semiconductor-metal core-shell nanowire to a quasi 1D axially stacked heterostructure via flash lamp annealing. Transmission electron microscopy imaging and electrical characterization confirm the high interface quality resulting in the lowest Schottky barrier for the GaAs-Au system reported to date. Without limiting the generality, this novel approach will open up new opportunities in the syntheses of other metal-semiconductor nanowire heterostructures and thus facilitate the research of high-quality interfaces in metal-semiconductor nanocontacts.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
GaAs, gold, metal-semiconductor heterostructure, Nanowire, quasi 1D contacts
in
Nano Letters
volume
19
issue
6
pages
6 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85066407942
ISSN
1530-6984
DOI
10.1021/acs.nanolett.9b01076
language
English
LU publication?
yes
id
540abc03-197f-412f-9b02-58a641c43443
date added to LUP
2019-06-25 13:30:23
date last changed
2019-11-13 05:37:19
@article{540abc03-197f-412f-9b02-58a641c43443,
  abstract     = {<p>The band offsets occurring at the abrupt heterointerfaces of suitable material combinations offer a powerful design tool for high performance or even new kinds of devices. Because of a large variety of applications for metal-semiconductor heterostructures and the promise of low-dimensional systems to present exceptional device characteristics, nanowire heterostructures gained particular interest over the past decade. However, compared to those achieved by mature two-dimensional processing techniques, quasi one-dimensional (1D) heterostructures often suffer from low interface and crystalline quality. For the GaAs-Au system, we demonstrate exemplarily a new approach to generate epitaxial and single crystalline metal-semiconductor nanowire heterostructures with atomically sharp interfaces using standard semiconductor processing techniques. Spatially resolved Raman measurements exclude any significant strain at the lattice mismatched metal-semiconductor heterojunction. On the basis of experimental results and simulation work, a novel self-assembled mechanism is demonstrated which yields one-step reconfiguration of a semiconductor-metal core-shell nanowire to a quasi 1D axially stacked heterostructure via flash lamp annealing. Transmission electron microscopy imaging and electrical characterization confirm the high interface quality resulting in the lowest Schottky barrier for the GaAs-Au system reported to date. Without limiting the generality, this novel approach will open up new opportunities in the syntheses of other metal-semiconductor nanowire heterostructures and thus facilitate the research of high-quality interfaces in metal-semiconductor nanocontacts.</p>},
  author       = {Benter, S. and Dubrovskii, V. G. and Bartmann, M. and Campo, A. and Zardo, I. and Sistani, M. and Stöger-Pollach, M. and Lancaster, S. and Detz, H. and Lugstein, A.},
  issn         = {1530-6984},
  keyword      = {GaAs,gold,metal-semiconductor heterostructure,Nanowire,quasi 1D contacts},
  language     = {eng},
  number       = {6},
  pages        = {3892--3897},
  publisher    = {The American Chemical Society (ACS)},
  series       = {Nano Letters},
  title        = {Quasi One-Dimensional Metal-Semiconductor Heterostructures},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.9b01076},
  volume       = {19},
  year         = {2019},
}