Quasi One-Dimensional Metal-Semiconductor Heterostructures
(2019) In Nano Letters 19(6). p.3892-3897- Abstract
The band offsets occurring at the abrupt heterointerfaces of suitable material combinations offer a powerful design tool for high performance or even new kinds of devices. Because of a large variety of applications for metal-semiconductor heterostructures and the promise of low-dimensional systems to present exceptional device characteristics, nanowire heterostructures gained particular interest over the past decade. However, compared to those achieved by mature two-dimensional processing techniques, quasi one-dimensional (1D) heterostructures often suffer from low interface and crystalline quality. For the GaAs-Au system, we demonstrate exemplarily a new approach to generate epitaxial and single crystalline metal-semiconductor nanowire... (More)
The band offsets occurring at the abrupt heterointerfaces of suitable material combinations offer a powerful design tool for high performance or even new kinds of devices. Because of a large variety of applications for metal-semiconductor heterostructures and the promise of low-dimensional systems to present exceptional device characteristics, nanowire heterostructures gained particular interest over the past decade. However, compared to those achieved by mature two-dimensional processing techniques, quasi one-dimensional (1D) heterostructures often suffer from low interface and crystalline quality. For the GaAs-Au system, we demonstrate exemplarily a new approach to generate epitaxial and single crystalline metal-semiconductor nanowire heterostructures with atomically sharp interfaces using standard semiconductor processing techniques. Spatially resolved Raman measurements exclude any significant strain at the lattice mismatched metal-semiconductor heterojunction. On the basis of experimental results and simulation work, a novel self-assembled mechanism is demonstrated which yields one-step reconfiguration of a semiconductor-metal core-shell nanowire to a quasi 1D axially stacked heterostructure via flash lamp annealing. Transmission electron microscopy imaging and electrical characterization confirm the high interface quality resulting in the lowest Schottky barrier for the GaAs-Au system reported to date. Without limiting the generality, this novel approach will open up new opportunities in the syntheses of other metal-semiconductor nanowire heterostructures and thus facilitate the research of high-quality interfaces in metal-semiconductor nanocontacts.
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- author
- Benter, S. LU ; Dubrovskii, V. G. ; Bartmann, M. ; Campo, A. ; Zardo, I. ; Sistani, M. ; Stöger-Pollach, M. ; Lancaster, S. ; Detz, H. and Lugstein, A.
- organization
- publishing date
- 2019
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- GaAs, gold, metal-semiconductor heterostructure, Nanowire, quasi 1D contacts
- in
- Nano Letters
- volume
- 19
- issue
- 6
- pages
- 6 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- scopus:85066407942
- pmid:31117757
- ISSN
- 1530-6984
- DOI
- 10.1021/acs.nanolett.9b01076
- language
- English
- LU publication?
- yes
- id
- 540abc03-197f-412f-9b02-58a641c43443
- date added to LUP
- 2019-06-25 13:30:23
- date last changed
- 2025-10-14 12:10:23
@article{540abc03-197f-412f-9b02-58a641c43443,
abstract = {{<p>The band offsets occurring at the abrupt heterointerfaces of suitable material combinations offer a powerful design tool for high performance or even new kinds of devices. Because of a large variety of applications for metal-semiconductor heterostructures and the promise of low-dimensional systems to present exceptional device characteristics, nanowire heterostructures gained particular interest over the past decade. However, compared to those achieved by mature two-dimensional processing techniques, quasi one-dimensional (1D) heterostructures often suffer from low interface and crystalline quality. For the GaAs-Au system, we demonstrate exemplarily a new approach to generate epitaxial and single crystalline metal-semiconductor nanowire heterostructures with atomically sharp interfaces using standard semiconductor processing techniques. Spatially resolved Raman measurements exclude any significant strain at the lattice mismatched metal-semiconductor heterojunction. On the basis of experimental results and simulation work, a novel self-assembled mechanism is demonstrated which yields one-step reconfiguration of a semiconductor-metal core-shell nanowire to a quasi 1D axially stacked heterostructure via flash lamp annealing. Transmission electron microscopy imaging and electrical characterization confirm the high interface quality resulting in the lowest Schottky barrier for the GaAs-Au system reported to date. Without limiting the generality, this novel approach will open up new opportunities in the syntheses of other metal-semiconductor nanowire heterostructures and thus facilitate the research of high-quality interfaces in metal-semiconductor nanocontacts.</p>}},
author = {{Benter, S. and Dubrovskii, V. G. and Bartmann, M. and Campo, A. and Zardo, I. and Sistani, M. and Stöger-Pollach, M. and Lancaster, S. and Detz, H. and Lugstein, A.}},
issn = {{1530-6984}},
keywords = {{GaAs; gold; metal-semiconductor heterostructure; Nanowire; quasi 1D contacts}},
language = {{eng}},
number = {{6}},
pages = {{3892--3897}},
publisher = {{The American Chemical Society (ACS)}},
series = {{Nano Letters}},
title = {{Quasi One-Dimensional Metal-Semiconductor Heterostructures}},
url = {{http://dx.doi.org/10.1021/acs.nanolett.9b01076}},
doi = {{10.1021/acs.nanolett.9b01076}},
volume = {{19}},
year = {{2019}},
}