Selective GaSb radial growth on crystal phase engineered InAs nanowires.
(2015) In Nanoscale 7(23). p.10472-10481- Abstract
- In this work we have developed InAs nanowire templates, with designed zinc blende and wurtzite segments, for selective growth of radial GaSb heterostructures using metal organic vapor phase epitaxy. We find that the radial growth rate of GaSb is determined by the crystal phase of InAs, and that growth is suppressed on InAs segments with a pure wurtzite crystal phase. The morphology and the thickness of the grown shell can be tuned with full control by the growth conditions. We demonstrate that multiple distinct core-shell segments can be designed and realized with precise control over their length and axial position. Electrical measurements confirm that suppression of shell growth is possible on segments with wurtzite structures. This... (More)
- In this work we have developed InAs nanowire templates, with designed zinc blende and wurtzite segments, for selective growth of radial GaSb heterostructures using metal organic vapor phase epitaxy. We find that the radial growth rate of GaSb is determined by the crystal phase of InAs, and that growth is suppressed on InAs segments with a pure wurtzite crystal phase. The morphology and the thickness of the grown shell can be tuned with full control by the growth conditions. We demonstrate that multiple distinct core-shell segments can be designed and realized with precise control over their length and axial position. Electrical measurements confirm that suppression of shell growth is possible on segments with wurtzite structures. This growth method enables new functionalities in structures formed by using bottom-up techniques, with complexity beyond that attainable by using top-down techniques. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/5442426
- author
- Namazi, Luna LU ; Nilsson, Malin LU ; Lehmann, Sebastian LU ; Thelander, Claes LU and Dick Thelander, Kimberly LU
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanoscale
- volume
- 7
- issue
- 23
- pages
- 10472 - 10481
- publisher
- Royal Society of Chemistry
- external identifiers
-
- pmid:26006335
- wos:000355987300021
- scopus:84930857430
- pmid:26006335
- ISSN
- 2040-3372
- DOI
- 10.1039/c5nr01165e
- language
- English
- LU publication?
- yes
- id
- e64b0f50-d7b2-43b9-b4d7-ad1c570e62fc (old id 5442426)
- date added to LUP
- 2016-04-01 10:58:13
- date last changed
- 2023-09-28 18:28:19
@article{e64b0f50-d7b2-43b9-b4d7-ad1c570e62fc,
abstract = {{In this work we have developed InAs nanowire templates, with designed zinc blende and wurtzite segments, for selective growth of radial GaSb heterostructures using metal organic vapor phase epitaxy. We find that the radial growth rate of GaSb is determined by the crystal phase of InAs, and that growth is suppressed on InAs segments with a pure wurtzite crystal phase. The morphology and the thickness of the grown shell can be tuned with full control by the growth conditions. We demonstrate that multiple distinct core-shell segments can be designed and realized with precise control over their length and axial position. Electrical measurements confirm that suppression of shell growth is possible on segments with wurtzite structures. This growth method enables new functionalities in structures formed by using bottom-up techniques, with complexity beyond that attainable by using top-down techniques.}},
author = {{Namazi, Luna and Nilsson, Malin and Lehmann, Sebastian and Thelander, Claes and Dick Thelander, Kimberly}},
issn = {{2040-3372}},
language = {{eng}},
number = {{23}},
pages = {{10472--10481}},
publisher = {{Royal Society of Chemistry}},
series = {{Nanoscale}},
title = {{Selective GaSb radial growth on crystal phase engineered InAs nanowires.}},
url = {{http://dx.doi.org/10.1039/c5nr01165e}},
doi = {{10.1039/c5nr01165e}},
volume = {{7}},
year = {{2015}},
}