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Thermodynamic assessment and binary nucleation modeling of Sn-seeded InGaAs nanowires

Ghasemi, Masoomeh LU ; Selleby, Malin and Johansson, Jonas LU (2017) In Journal of Crystal Growth 478. p.152-158
Abstract

We have performed a thermodynamic assessment of the As-Ga-In-Sn system based on the CALculation of PHAse Diagram (CALPHAD) method. This system is part of a comprehensive thermodynamic database that we are developing for nanowire materials. Specifically, the As-Ga-In-Sn can be used in modeling the growth of GaAs, InAs, and InxGa1−xAs nanowires assisted by Sn liquid seeds. In this work, the As-Sn binary, the As-Ga-Sn, As-In-Sn, and Ga-In-Sn ternary systems have been thermodynamically assessed using the CALPHAD method. We show the relevant phase diagrams and property diagrams. They all show good agreement with experimental data. Using our optimized description we have modeled the nucleation of... (More)

We have performed a thermodynamic assessment of the As-Ga-In-Sn system based on the CALculation of PHAse Diagram (CALPHAD) method. This system is part of a comprehensive thermodynamic database that we are developing for nanowire materials. Specifically, the As-Ga-In-Sn can be used in modeling the growth of GaAs, InAs, and InxGa1−xAs nanowires assisted by Sn liquid seeds. In this work, the As-Sn binary, the As-Ga-Sn, As-In-Sn, and Ga-In-Sn ternary systems have been thermodynamically assessed using the CALPHAD method. We show the relevant phase diagrams and property diagrams. They all show good agreement with experimental data. Using our optimized description we have modeled the nucleation of InxGa1−xAs in the zinc blende phase from a Sn-based quaternary liquid alloy using binary nucleation modeling. We have linked the composition of the solid nucleus to the composition of the liquid phase. Eventually, we have predicted the critical size of the nucleus that forms from InAs and GaAs pairs under various conditions. We believe that our modeling can guide future experimental realization of Sn-seeded InxGa1−xAs nanowires.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
A1. Nanostructures, A1. Nucleation, A1. Phase diagrams, A1. Phase equilibria, B2. Semiconducting III-V materials
in
Journal of Crystal Growth
volume
478
pages
7 pages
publisher
Elsevier
external identifiers
  • scopus:85029355864
  • wos:000413647300025
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2017.08.034
language
English
LU publication?
yes
id
57047ec6-3a10-4b92-adaa-69b3474091c1
date added to LUP
2017-09-29 08:03:00
date last changed
2018-01-16 13:19:53
@article{57047ec6-3a10-4b92-adaa-69b3474091c1,
  abstract     = {<p>We have performed a thermodynamic assessment of the As-Ga-In-Sn system based on the CALculation of PHAse Diagram (CALPHAD) method. This system is part of a comprehensive thermodynamic database that we are developing for nanowire materials. Specifically, the As-Ga-In-Sn can be used in modeling the growth of GaAs, InAs, and In<sub>x</sub>Ga<sub>1−x</sub>As nanowires assisted by Sn liquid seeds. In this work, the As-Sn binary, the As-Ga-Sn, As-In-Sn, and Ga-In-Sn ternary systems have been thermodynamically assessed using the CALPHAD method. We show the relevant phase diagrams and property diagrams. They all show good agreement with experimental data. Using our optimized description we have modeled the nucleation of In<sub>x</sub>Ga<sub>1−x</sub>As in the zinc blende phase from a Sn-based quaternary liquid alloy using binary nucleation modeling. We have linked the composition of the solid nucleus to the composition of the liquid phase. Eventually, we have predicted the critical size of the nucleus that forms from InAs and GaAs pairs under various conditions. We believe that our modeling can guide future experimental realization of Sn-seeded In<sub>x</sub>Ga<sub>1−x</sub>As nanowires.</p>},
  author       = {Ghasemi, Masoomeh and Selleby, Malin and Johansson, Jonas},
  issn         = {0022-0248},
  keyword      = {A1. Nanostructures,A1. Nucleation,A1. Phase diagrams,A1. Phase equilibria,B2. Semiconducting III-V materials},
  language     = {eng},
  month        = {11},
  pages        = {152--158},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Thermodynamic assessment and binary nucleation modeling of Sn-seeded InGaAs nanowires},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2017.08.034},
  volume       = {478},
  year         = {2017},
}