Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering
(2016) In Physical Review B (Condensed Matter and Materials Physics) 93(19).- Abstract
We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments create significant barriers for electron transport. We find a direct correlation of transport properties with quantum dot length and corresponding growth time of the enclosed ZB segment. The correlation is made possible by using a method to extract lengths of nanowire crystal phase segments directly from scanning electron microscopy images, and with support from transmission electron microscope images of typical nanowires. From experiments on controlled filling of nearly empty dots with... (More)
We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments create significant barriers for electron transport. We find a direct correlation of transport properties with quantum dot length and corresponding growth time of the enclosed ZB segment. The correlation is made possible by using a method to extract lengths of nanowire crystal phase segments directly from scanning electron microscopy images, and with support from transmission electron microscope images of typical nanowires. From experiments on controlled filling of nearly empty dots with electrons, up to the point where Coulomb oscillations can no longer be resolved, we estimate a lower bound for the ZB-WZ conduction-band offset of 95 meV.
(Less)
- author
- Nilsson, Malin LU ; Namazi, Luna LU ; Lehmann, Sebastian LU ; Leijnse, Martin LU ; Dick, Kimberly A. LU and Thelander, Claes LU
- organization
- publishing date
- 2016-05-17
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 93
- issue
- 19
- article number
- 195422
- publisher
- American Physical Society
- external identifiers
-
- wos:000376248600005
- scopus:84969268512
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.93.195422
- language
- English
- LU publication?
- yes
- id
- 588e24f0-9a92-4207-bf53-5f778677d9d3
- date added to LUP
- 2016-09-28 08:26:09
- date last changed
- 2025-04-04 14:38:33
@article{588e24f0-9a92-4207-bf53-5f778677d9d3,
abstract = {{<p>We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments create significant barriers for electron transport. We find a direct correlation of transport properties with quantum dot length and corresponding growth time of the enclosed ZB segment. The correlation is made possible by using a method to extract lengths of nanowire crystal phase segments directly from scanning electron microscopy images, and with support from transmission electron microscope images of typical nanowires. From experiments on controlled filling of nearly empty dots with electrons, up to the point where Coulomb oscillations can no longer be resolved, we estimate a lower bound for the ZB-WZ conduction-band offset of 95 meV.</p>}},
author = {{Nilsson, Malin and Namazi, Luna and Lehmann, Sebastian and Leijnse, Martin and Dick, Kimberly A. and Thelander, Claes}},
issn = {{1098-0121}},
language = {{eng}},
month = {{05}},
number = {{19}},
publisher = {{American Physical Society}},
series = {{Physical Review B (Condensed Matter and Materials Physics)}},
title = {{Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering}},
url = {{http://dx.doi.org/10.1103/PhysRevB.93.195422}},
doi = {{10.1103/PhysRevB.93.195422}},
volume = {{93}},
year = {{2016}},
}