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Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering

Nilsson, Malin LU ; Namazi, Luna LU ; Lehmann, Sebastian LU ; Leijnse, Martin LU ; Dick, Kimberly A. LU and Thelander, Claes LU (2016) In Physical Review B (Condensed Matter and Materials Physics) 93(19).
Abstract

We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments create significant barriers for electron transport. We find a direct correlation of transport properties with quantum dot length and corresponding growth time of the enclosed ZB segment. The correlation is made possible by using a method to extract lengths of nanowire crystal phase segments directly from scanning electron microscopy images, and with support from transmission electron microscope images of typical nanowires. From experiments on controlled filling of nearly empty dots with... (More)

We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments create significant barriers for electron transport. We find a direct correlation of transport properties with quantum dot length and corresponding growth time of the enclosed ZB segment. The correlation is made possible by using a method to extract lengths of nanowire crystal phase segments directly from scanning electron microscopy images, and with support from transmission electron microscope images of typical nanowires. From experiments on controlled filling of nearly empty dots with electrons, up to the point where Coulomb oscillations can no longer be resolved, we estimate a lower bound for the ZB-WZ conduction-band offset of 95 meV.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
93
issue
19
publisher
American Physical Society
external identifiers
  • Scopus:84969268512
  • WOS:000376248600005
ISSN
1098-0121
DOI
10.1103/PhysRevB.93.195422
language
English
LU publication?
yes
id
588e24f0-9a92-4207-bf53-5f778677d9d3
date added to LUP
2016-09-28 08:26:09
date last changed
2017-01-01 08:35:21
@article{588e24f0-9a92-4207-bf53-5f778677d9d3,
  abstract     = {<p>We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments create significant barriers for electron transport. We find a direct correlation of transport properties with quantum dot length and corresponding growth time of the enclosed ZB segment. The correlation is made possible by using a method to extract lengths of nanowire crystal phase segments directly from scanning electron microscopy images, and with support from transmission electron microscope images of typical nanowires. From experiments on controlled filling of nearly empty dots with electrons, up to the point where Coulomb oscillations can no longer be resolved, we estimate a lower bound for the ZB-WZ conduction-band offset of 95 meV.</p>},
  articleno    = {195422},
  author       = {Nilsson, Malin and Namazi, Luna and Lehmann, Sebastian and Leijnse, Martin and Dick, Kimberly A. and Thelander, Claes},
  issn         = {1098-0121},
  language     = {eng},
  month        = {05},
  number       = {19},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering},
  url          = {http://dx.doi.org/10.1103/PhysRevB.93.195422},
  volume       = {93},
  year         = {2016},
}